Äîêóìåíòàöèÿ è îïèñàíèÿ www.docs.chipfind.ru
www.irf.com
1
10/06/05
IRF7823PbF
HEXFET
®
Power MOSFET
Notes
through
are on page 10
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
100% Tested for R
G
Applications
l
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems
l
Optimized for Control FET applications
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
V
DSS
R
DS(on)
max
Qg
30V
8.7m:@V
GS
= 10V 9.1nC
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
f
W
P
D
@T
A
= 70°C
Power Dissipation
f
Linear Derating Factor
W/°C
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
g
20
°C/W
R
JA
Junction-to-Ambient
fg
50
Max.
13
11
100
± 20
30
-55 to + 150
2.5
0.02
1.6
PD - 97050
IRF7823PbF
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.024
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
6.9
8.7
m
9.3
11.9
V
GS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
V
GS(th)
Gate Threshold Voltage Coefficient
-5.1
mV/°C
I
DSS
Drain-to-Source Leakage Current
1.0
µA
150
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
gfs
Forward Transconductance
27
S
Q
g
Total Gate Charge
9.1
14
Q
gs1
Pre-Vth Gate-to-Source Charge
2.7
Q
gs2
Post-Vth Gate-to-Source Charge
0.84
nC
Q
gd
Gate-to-Drain Charge
3.2
Q
godr
Gate Charge Overdrive
2.4
See Fig. 17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
4.0
Q
oss
Output Charge
5.8
nC
R
g
Gate Resistance
2.0
3.0
t
d(on)
Turn-On Delay Time
7.2
t
r
Rise Time
8.2
t
d(off)
Turn-Off Delay Time
10
ns
t
f
Fall Time
2.7
C
iss
Input Capacitance
1110
C
oss
Output Capacitance
240
pF
C
rss
Reverse Transfer Capacitance
110
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
3.1
(Body Diode)
A
I
SM
Pulsed Source Current
100
(Body Diode)
Ã
V
SD
Diode Forward Voltage
1.0
V
t
rr
Reverse Recovery Time
7.8
12
ns
Q
rr
Reverse Recovery Charge
9.0
14
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 10A
V
GS
= 0V
V
DS
= 15V
V
GS
= 4.5V, I
D
= 10A
e
V
GS
= 4.5V
Typ.
V
DS
= V
GS
, I
D
= 25µA
Clamped Inductive Load
V
DS
= 15V, I
D
= 10A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
T
J
= 25°C, I
F
= 10A, V
DD
= 15V
di/dt = 500A/µs
eÃSee Fig. 16
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 10A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
e
Conditions
See Fig. 15
Max.
230
10
= 1.0MHz
IRF7823PbF
www.irf.com
3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
2.3V
VGS
TOP
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM
2.3V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.3V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM
2.3V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 13A
VGS = 10V
1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 150°C
VDS = 15V
60µs PULSE WIDTH
IRF7823PbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
0
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
2
4
6
8
10 12 14 16 18 20
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 24V
VDS= 15V
ID= 10A
IRF7823PbF
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
25
50
75
100
125
150
TA , Ambient Temperature (°C)
0
2
4
6
8
10
12
14
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W)
i (sec)
7.520 0.013427
25.573
1.1097
16.913
36.9
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C i=
i/R i
C i=
i/Ri
A
A
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
),
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 50µA
PDF 
ZIP