www.irf.com
1
3/25/01
IRF7468
SMPS MOSFET
HEXFET
®
Power MOSFET
Notes
through
are on page 8
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
R
JA
Junction-to-Ambient
50
°C/W
Thermal Resistance
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
DS
Drain-Source Voltage
40
V
V
GS
Gate-to-Source Voltage
± 12 V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
9.4
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
7.5
A
I
DM
Pulsed Drain Current
75
P
D
@T
A
= 25°C
Maximum Power Dissipation
2.5
W
P
D
@T
A
= 70°C
Maximum Power Dissipation
1.6
W
Linear Derating Factor 0.02 mW/°C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
SO-8
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
PD - 93914D
V
DSS
R
DS(on)
max(m
)
)
)
)
)
I
D
40V
15.5@V
GS
= 10V
9.4A
Applications
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
IRF7468
2
www.irf.com
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
27
S
V
DS
= 20V, I
D
= 8.0A
Q
g
Total Gate Charge
23 34 I
D
= 8.0A
Q
gs
Gate-to-Source Charge
6.4
9.6
nC
V
DS
= 20V
Q
gd
Gate-to-Drain ("Miller") Charge
6.7
10
V
GS
= 4.5V,
Q
oss
Output Gate Charge
17
26
V
GS
= 0V, V
DS
= 16V
t
d(on)
Turn-On Delay Time
7.6
V
DD
= 20V
t
r
Rise Time
2.3
I
D
= 8.0A
t
d(off)
Turn-Off Delay Time
20
R
G
= 1.8
t
f
Fall Time
3.8
V
GS
= 4.5V
C
iss
Input Capacitance
2460
V
GS
= 0V
C
oss
Output Capacitance
490
V
DS
= 20V
C
rss
Reverse Transfer Capacitance
38
pF
= 1.0MHz
Symbol
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
160
mJ
I
AR
Avalanche Current
8.0
A
Avalanche Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
0.81
1.3
V
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
0.65
T
J
= 125°C, I
S
= 8.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
45
68
ns
T
J
= 25°C, I
F
= 8.0A, V
R
=20V
Q
rr
Reverse Recovery Charge
76
110
nC
di/dt = 100A/µs
t
rr
Reverse Recovery Time
58
87
ns
T
J
= 125°C, I
F
= 8.0A, V
R
=20V
Q
rr
Reverse Recovery Charge
110
160
nC
di/dt = 100A/µs
S
D
G
Diode Characteristics
2.3
74
A
V
SD
Diode Forward Voltage
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
µA
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.025 V/°C Reference to 25°C, I
D
= 1mA
11.7
15.5
V
GS
= 10V, I
D
= 9.4A
13.0
17.0
V
GS
= 4.5V, I
D
= 7.5A
18.0 35.0
V
GS
= 4.5V, I
D
= 4.7A
V
GS(th)
Gate Threshold Voltage
0.8
2.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 32V, V
GS
= 0V
100
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
200
V
GS
= 12V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -12V
IRF7468
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
4.50V
3.00V
2.70V
2.50V
2.25V
2.00V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
4.50V
3.00V
2.70V
2.50V
2.25V
2.00V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
0.1
1
10
100
2.0
2.4
2.8
3.2
3.6
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
4.5V
10A
IRF7468
4
www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
50
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
8.0A
V
= 20V
DS
V
= 32V
DS
IRF7468
www.irf.com
5
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 6. On-Resistance Vs. Drain Current
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
PDF 
ZIP