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2/8/01
IRF7465
SMPS MOSFET
HEXFET
®
Power MOSFET
Parameter
Max.
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
1.9
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
1.5
A
I
DM
Pulsed Drain Current
15
P
D
@T
A
= 25°C
Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
V
GS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
7.8
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 8
SO-8
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
V
DSS
R
DS(on)
max
I
D
150V
0.28
@V
GS
= 10V
1.9A
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
R
JA
Junction-to-Ambient
50
°C/W
Thermal Resistance
l
High frequency DC-DC converters
Benefits
Applications
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
PD-93896
IRF7465
2
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
0.75
S
V
DS
= 50V, I
D
= 1.14A
Q
g
Total Gate Charge
10
15 I
D
= 1.14A
Q
gs
Gate-to-Source Charge
2.7
4.0
nC
V
DS
= 120V
Q
gd
Gate-to-Drain ("Miller") Charge
5.0
7.5
V
GS
= 10V
t
d(on)
Turn-On Delay Time
7.0
V
DD
= 75V
t
r
Rise Time
1.2
I
D
= 1.14A
t
d(off)
Turn-Off Delay Time
10
R
G
= 6.0
t
f
Fall Time
9.0
V
GS
= 10V
C
iss
Input Capacitance
330
V
GS
= 0V
C
oss
Output Capacitance
80
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
16
pF
= 1.0MHz
C
oss
Output Capacitance
420
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
41
V
GS
= 0V, V
DS
= 120V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
76
V
GS
= 0V, V
DS
= 0V to 120V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
40
mJ
I
AR
Avalanche Current
1.9
A
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 1.14A, V
GS
= 0V
t
rr
Reverse Recovery Time
62
93
ns
T
J
= 25°C, I
F
= 1.14A
Q
rr
Reverse RecoveryCharge
160
240
nC
di/dt = 100A/µs
Diode Characteristics
2.3
15
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
150
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.19 V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.28
V
GS
= 10V, I
D
= 1.14A
V
GS(th)
Gate Threshold Voltage
3.0
5.5
V
V
DS
= V
GS
, I
D
= 250µA
25
µA
V
DS
= 150V, V
GS
= 0V
250
V
DS
= 120V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current
IRF7465
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
6.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
6.0V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
0.1
1
10
100
6.0
7.0
8.0
9.0
10.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 150 C
J
°
T = 25 C
J
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
1.9A
IRF7465
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
4
8
12
16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
1.14A
V
= 30V
DS
V
= 75V
DS
V
= 120V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
TA = 25°C
TJ = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
IRF7465
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
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