Parameter
Max.
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
12
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
8.4
I
DM
Pulsed Drain Current
58
P
D
@T
A
= 25°C
Power Dissipation
2.5
Linear Derating Factor
0.02
mW/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
260 mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
IRF7413A
PD - 9.1613A
PRELIMINARY
V
DSS
= 30V
R
DS(on)
= 0.0135
HEXFET
®
Power MOSFET
S O -8
T op V iew
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
l
Generation V Technology
l
Ultra Low On-Resistance
l
N-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
W
A
8/25/97
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
°C/W
IRF7413A
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.0
V
T
J
= 25°C, I
S
= 6.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
74
110
ns
T
J
= 25°C, I
F
= 7.3A
Q
rr
Reverse RecoveryCharge
200
300
nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
58
3.1
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.034
V/°C
Reference to 25°C, I
D
= 1mA
0.0135
V
GS
= 10V, I
D
= 6.6A
0.020
V
GS
= 4.5V, I
D
= 3.3A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
10
S
V
DS
= 10V, I
D
= 3.7A
1.0
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
52
79
I
D
= 7.3A
Q
gs
Gate-to-Source Charge
6.1
9.2
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
16
23
V
GS
= 10 V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
8.6
V
DD
= 15V
t
r
Rise Time
50
I
D
= 7.3A
t
d(off)
Turn-Off Delay Time
52
R
G
= 6.2
t
f
Fall Time
46
R
D
= 2.0
,
See Fig. 10
C
iss
Input Capacitance
1800
V
GS
= 0V
C
oss
Output Capacitance
680
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
240
= 1.0MHz, See Fig. 5
µA
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Notes:
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
7.3A, di/dt
100A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Starting T
J
= 25°C, L =9.8mH
R
G
= 25
, I
AS
=7.3A. (See Figure 12)
Pulse width
300µs; duty cycle
2%.
Use IRF7413 data and test conditions
Surface mounted on FR-4 board, t
10sec.
IRF7413A
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
0 . 1
1
1 0
20 µs P U LSE W I DTH
T = 25 °C
A
J
D S
V , D ra in-to-S ou rce V o lta ge (V )
3 .0 V
VGS
T OP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TOM 3. 0V
DI
,
D
r
ai
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
1
1 0
1 0 0
0 . 1
1
1 0
A
D S
V , D rain-to -S ou rce Vo lta ge (V)
D
I
,
D
r
ai
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
20 µs P U LSE W I DTH
T = 15 0°C
J
3 .0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
1 0
1 0 0
3 . 0
3 . 5
4 . 0
4 . 5
T = 2 5 ° C
T = 1 50 °C
J
J
G S
V , Ga te -to -S o u rce V o l ta g e (V )
D
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
A
V = 1 0 V
2 0 µ s PU L SE W ID TH
D S
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , Ju nctio n T emp eratu re (°C)
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
V = 10 V
G S
A
I = 7. 3A
D
IRF7413A
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
2 4 0 0
2 8 0 0
3 2 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0V , f = 1MH z
C = C + C , C SH OR TED
C = C
C = C + C
G S
is s gs g d ds
rs s g d
os s ds gd
C
i s s
C
o s s
C
rs s
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
5 0
6 0
Q , To tal Ga te Ch arg e (nC )
G
V
,
G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FO R TES T C IR CU I T
SEE FIG U R E 9
I = 7 .3 A
V = 2 4V
V = 1 5V
D
DS
DS
1
1 0
1 0 0
0 . 4
1 . 2
2 . 0
2 . 8
3 . 6
T = 25°C
T = 15 0°C
J
J
V = 0 V
G S
V , So urce-to -D rain V olta ge (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
IRF7413A
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
10V
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
.2
µ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
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