HEXFET
®
Power MOSFET
PD - 9.1246C
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Generation V Technology
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Ultra Low On-Resistance
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P-Channel Mosfet
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7404
S O -8
To p V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
V
DSS
= -20V
R
DS(on)
= 0.040
Parameter
Max.
Units
I
D
@ T
A
= 25°C
10 Sec. Pulsed Drain Current, V
GS
@ -4.5V
-7.7
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ -4.5V
-6.7
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ -4.5V
-5.4
I
DM
Pulsed Drain Current
-27
P
D
@T
A
= 25°C
Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
V
GS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
3/10/99
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
°C/W
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1
IRF7404
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
V
V
GS
= 0V, ID = -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.012
V/°C
Reference to 25°C, I
D
= -1mA
0.040
V
GS
= -4.5V, I
D
= -3.2A
0.060
V
GS
= -2.7V, I
D
= -2.7A
V
GS(th)
Gate Threshold Voltage
-0.70
V
V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance
6.8
S
V
DS
= -15V, I
D
= -3.2A
-1.0
V
DS
= -16V, V
GS
= 0V
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
50
I
D
= -3.2A
Q
gs
Gate-to-Source Charge
5.5
nC
V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge
21
V
GS
= -4.5V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time
14
V
DD
= -10V
t
r
Rise Time
32
I
D
= -3.2A
t
d(off)
Turn-Off Delay Time
100
R
G
= 6.0
t
f
Fall Time
65
R
D
= 3.1
,
See Fig. 10
Between lead tip
and center of die contact
C
iss
Input Capacitance
1500
V
GS
= 0V
C
oss
Output Capacitance
730
pF
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
340
= 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.0
V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
69
100
ns
T
J
= 25°C, I
F
= -3.2A
Q
rr
Reverse RecoveryCharge
71
110
µC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-3.2A, di/dt
-65A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Pulse width
300µs; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-27
-3.1
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
4.0
L
D
Internal Drain Inductance
2.5
nH
ns
nA
µA
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
S
D
G
Surface mounted on FR-4 board, t
10sec.
IRF7404
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3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1
1 0
1 0 0
1 . 5
2 . 0
2 . 5
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
T = 2 5 °C
T = 1 5 0 °C
J
J
G S
D
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , G a te-to -S o u rce V o lta g e (V )
V = -1 5 V
2 0 µ s P U L S E W ID T H
D S
0 . 1
1
1 0
1 0 0
1 0 0 0
0 . 0 1
0 . 1
1
1 0
1 0 0
D
DS
20 µ s P U L S E W ID T H
T = 15 0°C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rre
n
t
(A
)
-V , D rain-to-S ource V oltage (V )
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5 V
0 . 1
1
1 0
1 0 0
1 0 0 0
0 . 0 1
0 . 1
1
1 0
1 0 0
D
D S
20 µ s P U L S E W ID T H
T = 25 °C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D rain-to-S ourc e V oltage (V )
J
VGS
TO P - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BO TTOM - 1.5V
-1 .5 V
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , J unc tion T em perature (°C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed
)
A
I = -5 .3A
D
V = -4.5 V
G S
IRF7404
4
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1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0 . 1
1
1 0
1 0 0
0 . 2
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
1 . 6
T = 2 5°C
T = 1 5 0°C
J
J
V = 0V
G S
S D
SD
-I
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , S ource-to-D rain V oltage (V )
0
1 0 0 0
2 0 0 0
3 0 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
A
D S
-V , D rain-to-S ourc e V oltage (V )
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
is s
C
o s s
C
rs s
0
2
4
6
8
1 0
0
1 0
2 0
3 0
4 0
5 0
6 0
G
GS
A
F O R T E S T C IR C U IT
S E E F IG U R E 1 2
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , T otal G ate C harge (nC )
I = -3 .2 A
V = -1 6V
D
D S
IRF7404
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5
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
D S
V
G S
R
G
R
D
D .U .T .
-4 .5 V
P uls e W id th
1 µ s
D u ty F a c to r
0 .1 %
V
D D
+
-
A
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
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