N-Channel
P-Channel
Drain-Source Voltage
V
DS
30
-30
Gate-Source Voltage
V
GS
± 20
T
A
= 25°C
6.5
-4.9
T
A
= 70°C
5.2
-3.9
Pulsed Drain Current
I
DM
30
-30
Continuous Source Current (Diode Conduction)
I
S
2.5
-2.5
T
A
= 25°C
2.0
T
A
= 70°C
1.3
Single Pulse Avalanche Energy
E
AS
82
140
mJ
Avalanche Current
I
AR
4.0
-2.8
A
Repetitive Avalanche Energy
E
AR
0.20
mJ
Peak Diode Recovery dv/dt
dv/dt
5.0
-5.0
V/ ns
Junction and Storage Temperature Range
T
J,
T
STG
-55 to + 150 °C
PRELIMINARY
HEXFET
®
Power MOSFET
PD - 9.1606A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
9/15/97
S O -8
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
IRF7319
Description
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
R
JA
62.5
°C/W
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
Symbol Maximum
Units
N-Ch P-Ch
V
DSS
30V
-30V
R
DS(on)
0.029
0.058
D1
N -C H A N N E L M O S F E T
P -C H A N N E L M O S FE T
D 1
D2
D 2
G 1
S 2
G 2
S 1
Top View
8
1
2
3
4
5
6
7
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
IRF7319
Surface mounted on FR-4 board, t
10sec.
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 30
--
--
V
GS
= 0V, I
D
= 250µA
P-Ch -30
--
--
V
GS
= 0V, I
D
= -250µA
N-Ch
-- 0.022
--
Reference to 25°C, I
D
= 1mA
P-Ch
-- 0.022
--
Reference to 25°C, I
D
= -1mA
-- 0.023 0.029
V
GS
= 10V, I
D
= 5.8A
-- 0.032 0.046
V
GS
= 4.5V, I
D
= 4.7A
-- 0.042 0.058
V
GS
= -10V, I
D
= -4.9A
-- 0.076 0.098
V
GS
= -4.5V, I
D
= -3.6A
N-Ch 1.0
--
--
V
DS
= V
GS
, I
D
= 250µA
P-Ch -1.0
--
--
V
DS
= V
GS
, I
D
= -250µA
N-Ch
--
14
--
V
DS
= 15V, I
D
= 5.8A
P-Ch
--
7.7
--
V
DS
= -15V, I
D
= -4.9A
N-Ch
--
--
1.0
V
DS
= 24V, V
GS
= 0V
P-Ch
--
--
-1.0
V
DS
= -24V, V
GS
= 0V
N-Ch
--
--
25
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
P-Ch
--
--
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
I
GSS
Gate-to-Source Forward Leakage
N-P
--
±100
V
GS
= ±20V
N-Ch
--
22
33
P-Ch
--
23
34
N-Ch
--
2.6
3.9
P-Ch
--
3.8
5.7
N-Ch
--
6.4
9.6
P-Ch
--
5.9
8.9
N-Ch
--
8.1
12
P-Ch
--
13
19
N-Ch
--
8.9
13
P-Ch
--
13
20
N-Ch
--
26
39
P-Ch
--
34
51
N-Ch
--
17
26
P-Ch
--
32
48
N-Ch
--
650
--
P-Ch
--
710
--
N-Ch
--
320
--
pF
P-Ch
--
380
--
N-Ch
--
130
--
P-Ch
--
180
--
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
V
S
µA
nC
ns
N-Channel
I
D
= 5.8A, V
DS
= 15V, V
GS
= 10V
P-Channel
I
D
= -4.9A, V
DS
= -15V, V
GS
= -10V
N-Channel
V
DD
= 15V, I
D
= 1.0A, R
G
= 6.0
,
R
D
= 15
P-Channel
V
DD
= -15V, I
D
= -1.0A, R
G
= 6.0
,
R
D
= 15
N-Channel
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V, = 1.0MHz
N-Ch
P-Ch
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
--
--
2.5
P-Ch
--
--
-2.5
N-Ch
--
--
30
P-Ch
--
--
-30
N-Ch
--
0.78
1.0
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
P-Ch
--
-0.78 -1.0
T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
N-Ch
--
45
68
P-Ch
--
44
66
N-Ch
--
58
87
P-Ch
--
42
63
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
=1.7A, di/dt = 100A/µs
P-Channel
T
J
= 25°C, I
F
= -1.7A, di/dt = 100A/µs
N-Channel I
SD
4.0A, di/dt
74A/µs, V
DD
V
(BR)DSS
, T
J
150°C
P-Channel I
SD
-2.8A, di/dt
150A/µs, V
DD
V
(BR)DSS
, T
J
150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width
300µs; duty cycle
2%.
N-Channel Starting T
J
= 25°C, L = 10mH R
G
= 25
, I
AS
= 4.0A. (See Figure 12)
P-Channel Starting T
J
= 25°C, L = 35mH R
G
= 25
, I
AS
= -2.8A.
nA
IRF7319
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
1
1 0
1 0 0
0 . 1
1
1 0
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
B O T T O M 3 . 0 V
DI , Drain-to-Source Current (A)
1
1 0
1 0 0
0 . 1
1
1 0
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
B O T T O M 3 . 0 V
1
1 0
1 0 0
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
T = 25°C
T = 150°C
J
J
G S
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
D S
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
1 . 6
T = 25°C
T = 150°C
J
J
V = 0V
G S
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
S D
SD
A
IRF7319
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
R
DS
(on) , Drain-to-Source On Resistance (
)
R
DS
(on) , Drain-to-Source On Resistance (
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
5.8A
0 . 0 2 0
0 . 0 2 4
0 . 0 2 8
0 . 0 3 2
0 . 0 3 6
0 . 0 4 0
0
1 0
2 0
3 0
4 0
A
I , Drain Current (A)
D
V = 10V
G S
V = 4.5V
G S
0 . 0 0
0 . 0 2
0 . 0 4
0 . 0 6
0 . 0 8
0 . 1 0
0 . 1 2
0
3
6
9
1 2
1 5
A
G S
V , Gate-to-Source Voltage (V)
I = 5.8A
D
0
4 0
8 0
1 2 0
1 6 0
2 0 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 1.8A
3.2A
BOTTOM 4.0A
D
I
D
IRF7319
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
0
3 0 0
6 0 0
9 0 0
1 2 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0V , f = 1MH z
C = C + C , C SH OR TED
C = C
C = C + C
G S
is s gs g d ds
rs s g d
os s ds gd
C
is s
C
o s s
C
rs s
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
5.8A
V
= 15V
DS
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
PDF 
ZIP