PRELIMINARY
HEXFET
®
Power MOSFET
PD - 9.1505A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
8/25/97
S O -8
V
DSS
= -30V
R
DS(on)
= 0.058
IRF7316
Description
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
V
GS
± 20
T
A
= 25°C
-4.9
T
A
= 70°C
-3.9
Pulsed Drain Current
I
DM
-30
Continuous Source Current (Diode Conduction)
I
S
-2.5
T
A
= 25°C
2.0
T
A
= 70°C
1.3
Single Pulse Avalanche Energy
E
AS
140
mJ
Avalanche Current
I
AR
-2.8
A
Repetitive Avalanche Energy
E
AR
0.20
mJ
Peak Diode Recovery dv/dt
dv/dt
-5.0
V/ ns
Junction and Storage Temperature Range
T
J,
T
STG
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
R
JA
62.5
°C/W
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
D 1
D 1
D 2
D 2
G 1
S 2
G 2
S 1
T op V iew
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
IRF7316
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-0.78 -1.0
V
T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
44
66
ns
T
J
= 25°C, I
F
= -1.7A
Q
rr
Reverse RecoveryCharge
42
63
nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
-30
-2.5
A
Surface mounted on FR-4 board, t
10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-2.8A, di/dt
150A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Notes:
Starting T
J
= 25°C, L = 35mH
R
G
= 25
, I
AS
= -2.8A.
Pulse width
300µs; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.022
V/°C
Reference to 25°C, I
D
= -1mA
0.042 0.058
V
GS
= -10V, I
D
= -4.9A
0.076 0.098
V
GS
= -4.5V, I
D
= -3.6A
V
GS(th)
Gate Threshold Voltage
-1.0
V
V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance
7.7
S
V
DS
= -15V, I
D
= -4.9A
-1.0
V
DS
= -24V, V
GS
= 0V
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage
100
V
GS
= -20V
Gate-to-Source Reverse Leakage
-100
V
GS
= 20V
Q
g
Total Gate Charge
23
34
I
D
= -4.9A
Q
gs
Gate-to-Source Charge
3.8
5.7
nC
V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge
5.9
8.9
V
GS
= -10V, See Fig. 10
t
d(on)
Turn-On Delay Time
13
19
V
DD
= -15V
t
r
Rise Time
13
20
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
34
51
R
G
= 6.0
t
f
Fall Time
32
48
R
D
= 15
C
iss
Input Capacitance
710
V
GS
= 0V
C
oss
Output Capacitance
380
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
180
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF7316
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
1
1 0
1 0 0
0 . 1
1
1 0
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
B O T T O M - 3 . 0 V
1
1 0
1 0 0
0 . 1
1
1 0
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
B O T T O M - 3 . 0 V
20µs PULSE WIDTH
T = 150°C
J
1
1 0
1 0 0
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
5 . 5
6 . 0
T = 25°C
T = 150°C
J
J
G S
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
D S
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
T = 25°C
T = 150°C
J
J
V = 0V
G S
S D
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
IRF7316
0 . 0 0
0 . 0 4
0 . 0 8
0 . 1 2
0 . 1 6
0
3
6
9
1 2
1 5
A
I = -4.9A
D
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
R
DS
(on) , Drain-to-Source On Resistance (
)
R
DS
(on) , Drain-to-Source On Resistance (
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
4.9A
25
50
75
100
125
150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.3A
-2.2A
-2.8A
0 . 0
0 . 1
0 . 2
0 . 3
0 . 4
0 . 5
0 . 6
0
1 0
2 0
3 0
A
V = -4.5V
V = -10V
G S
G S
-I
D
, Drain Current (A)
-V
GS
, Gate -to-Source Voltage (V)
-
-
-
4.9A
-
10V
IRF7316
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1
1 0
1 0 0
C, Capacitance (pF)
D S
V , Drain-to-Source Voltage (V)
A
C
iss
C
oss
C
rss
V
GS
= 0V f = 1 MHz
Ciss = Cgs + Cgd + Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
-
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-4.9A
V
=-15V
DS
IRF7316
Package Outline
SO8 Outline
SO8
Part Marking Information
E X A M P L E : TH IS IS A N IR F 7 101
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W E E K
W A F E R
L O T C O D E
(L A S T 4 D IG IT S )
XX X X
B O T TO M
P A R T N U M B E R
T OP
IN T E R N A TI ON A L
R E C T IF IE R
L O G O
F 7 1 01
3 12
K x 4 5 °
C
8 X
L
8 X
H
0.25 (.010) M A M
A
0 . 1 0 ( . 0 0 4 )
B 8 X
0.25 (.010) M C A S B S
- C -
6 X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
R E C O M M E N D E D F O O T P R I N T
0 . 7 2 ( . 0 2 8 )
8 X
1 . 7 8 ( . 0 7 0 )
8X
6 . 4 6 ( . 2 5 5 )
1 . 2 7 ( . 0 5 0 )
3X
DIM
INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A 1 . 0 0 4 0 . 0 0 9 8 0 . 1 0 0 . 2 5
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
N O T E S :
1 . D I M E N S I O N I N G A N D T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M - 1 9 8 2 .
2 . C O N T R O L L I N G D I M E N S I O N : I N C H .
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S ( I N C H E S ) .
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 ( . 0 0 6 ) .
D I M E N S I O N S I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O A S U B S T R A T E . .
5
6
A 1
e 1
IRF7316
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
3 30 .00
(12 .9 92 )
M A X .
1 4.4 0 ( .5 66 )
1 2.4 0 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 .
F E E D D IR E C T IO N
T E R M IN A L N U M BE R 1
1 2. 3 ( .48 4 )
1 1. 7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
N O T E S :
1 . CO NT R O LL IN G DIM EN S IO N : M ILL IM E T E R.
2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E T E R S( IN CH ES ) .
3 . O U T LINE C O N F O RM S T O E IA -4 81 & E IA - 54 1.
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