HEXFET
®
Power MOSFET
PD - 91480B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
9/12/02
SO-8
V
DSS
= 30V
R
DS(on)
= 0.029
IRF7313
Description
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
± 20
T
A
= 25°C
6.5
T
A
= 70°C
5.2
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
I
S
2.5
T
A
= 25°C
2.0
T
A
= 70°C
1.3
Single Pulse Avalanche Energy
E
AS
82
mJ
Avalanche Current
I
AR
4.0
A
Repetitive Avalanche Energy
E
AR
0.20
mJ
Peak Diode Recovery dv/dt
dv/dt
5.8
V/ ns
Junction and Storage Temperature Range
T
J,
T
STG
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
R
JA
62.5
°C/W
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
IRF7313
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
0.78 1.0
V
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
45
68
ns
T
J
= 25°C, I
F
= 1.7A
Q
rr
Reverse RecoveryCharge
58
87nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
30
2.5
A
S
D
G
Surface mounted on FR-4 board, t 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
4.0A, di/dt 74A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Notes:
Starting T
J
= 25°C, L = 10mH
R
G
= 25, I
AS
= 4.0A.
Pulse width 300µs; duty cycle 2%.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
0.022
V/°C Reference to 25°C, I
D
= 1mA
0.023 0.029
V
GS
= 10V, I
D
= 5.8A
0.032 0.046
V
GS
= 4.5V, I
D
= 4.7A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
14
S
V
DS
= 15V, I
D
= 5.8A
1.0
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
22
33
I
D
= 5.8A
Q
gs
Gate-to-Source Charge
2.6
3.9
nC
V
DS
= 15V
Q
gd
Gate-to-Drain ("Miller") Charge
6.4
9.6
V
GS
= 10V, See Fig. 10
t
d(on)
Turn-On Delay Time
8.1
12
V
DD
= 15V
t
r
Rise Time
8.9
13
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
26
39
R
G
= 6.0
t
f
Fall Time
1726
R
D
= 15
C
iss
Input Capacitance
650
V
GS
= 0V
C
oss
Output Capacitance
320
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
130
= 1.0MHz, See Fig. 9
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
IRF7313
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1
1
10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
DI , D
r
a
i
n
-
to
-S
o
u
r
c
e
C
u
rre
n
t
(A
)
1
10
100
0.1
1
10
A
DS
V , Drain-to-Source Voltage (V)
DI ,
D
r
ai
n-t
o
-S
ource C
u
rrent
(A
)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0
3.5
4.0
4.5
5.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I
,
D
r
ai
n-
t
o
-
S
our
ce C
u
r
r
ent
(
A
)
A
V = 10V
20µs PULSE WIDTH
DS
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
,
R
e
verse D
r
ai
n C
u
rrent
(A
)
SD
SD
A
VDS
IRF7313
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
R
DS
(on)
,
Drain-to-Source
On
Resistance
(
)
R
DS
(on)
,
Drain-to-Source
On
R
esistance
(
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
D
S
(
on)
°
V
=
I =
GS
D
10V
5.8A
0
40
80
120
160
200
25
50
75
100
125
150
J
E
,
S
i
ngl
e P
u
l
s
e A
v
al
anche E
nergy (m
J)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 1.8A
3.2A
BOTTOM 4.0A
D
0.020
0.024
0.028
0.032
0.036
0.040
0
10
20
30
40
A
I , Drain Current (A)
D
V = 10V
GS
V = 4.5V
GS
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0
3
6
9
12
15
A
GS
V , Gate-to-Source Voltage (V)
I = 5.8A
D
I
D
IRF7313
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
a
l
R
e
sponse
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
0
300
600
900
1200
1
10
100
C
,
C
a
p
a
c
i
ta
n
c
e
(p
F
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
5.8A
V
= 15V
DS
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