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HEXFET
®
Power MOSFET
PD - 9.1238C
8/25/97
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Generation V Technology
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Ultra Low On-Resistance
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Dual N-Channel Mosfet
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
IRF7301
S O -8
D 1
D 1
D 2
D 2
G 1
S 2
G 2
S 1
T o p V iew
8
1
2
3
4
5
6
7
Parameter
Max.
Units
I
D
@ T
A
= 25°C
10 Sec. Pulsed Drain Current, V
GS
@ 4.5V
5.7
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
5.2
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
4.1
I
DM
Pulsed Drain Current
21
P
D
@T
A
= 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
V
GS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
V
DSS
= 20V
R
DS(on)
= 0.050
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
62.5
°C/W
IRF7301
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.044
V/°C
Reference to 25°C, I
D
= 1mA
0.050
V
GS
= 4.5V, I
D
= 2.6A
0.070
V
GS
= 2.7V, I
D
= 2.2A
V
GS(th)
Gate Threshold Voltage
0.70
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
8.3
S
V
DS
= 15V, I
D
= 2.6A
1.0
V
DS
= 16V, V
GS
= 0V
25
V
DS
= 16V, V
GS
= 0V, T
J
= 125 °C
Gate-to-Source Forward Leakage
100
V
GS
= 12V
Gate-to-Source Reverse Leakage
-100
V
GS
= - 12V
Q
g
Total Gate Charge
20
I
D
= 2.6A
Q
gs
Gate-to-Source Charge
2.2
nC
V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge
8.0
V
GS
= 4.5V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time
9.0
V
DD
= 10V
t
r
Rise Time
42
I
D
= 2.6A
t
d(off)
Turn-Off Delay Time
32
R
G
= 6.0
t
f
Fall Time
51
R
D
= 3.8
,
See Fig. 10
Between lead tip
and center of die contact
C
iss
Input Capacitance
660
V
GS
= 0V
C
oss
Output Capacitance
280
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
140
= 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.0
V
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
t
rr
Reverse Recovery Time
29
44
ns
T
J
= 25°C, I
F
= 2.6A
Q
rr
Reverse RecoveryCharge
22
33
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
2.6A, di/dt
100A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Pulse width
300µs; duty cycle
2%.
Source-Drain Ratings and Characteristics
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
21
2.5
A
S
D
G
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
6.0
L
D
Internal Drain Inductance
4.0
nH
ns
nA
µA
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Surface mounted on FR-4 board, t
10sec.
IRF7301
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1
1 0
1 0 0
1 . 5
2 . 0
2 . 5
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
T = 2 5 °C
T = 1 50 °C
J
J
G S
V , Ga te -to -S o u rce V o lta g e (V )
D
I
,
D
r
ai
n
-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
A
V = 1 5 V
2 0 µ s PU L SE W ID T H
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
J
T , Ju nction Te mpe ratu re (°C )
R
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed
)
A
V = 4.5 V
G S
I = 4 .3A
D
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
I
,
D
r
ai
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
D
V , Dra in -to-So urce V oltag e (V)
D S
20 µs P U LSE W I DTH
T = 25 °C
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTT OM 1.5V
1 .5V
J
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
I
,
D
r
a
i
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
D
V , Dra in-to-So urce V olta ge (V )
D S
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTT OM 1.5V
1.5 V
20 µ s PU LSE W I D TH
T = 15 0°C
J
IRF7301
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
3 0 0
6 0 0
9 0 0
1 2 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0V, f = 1M H z
C = C + C , C SH O R TED
C = C
C = C + C
G S
iss gs gd ds
rss gd
oss ds gd
C
i s s
C
o s s
C
rs s
0
2
4
6
8
1 0
0
5
1 0
1 5
2 0
2 5
Q , T ota l G ate Ch arge (n C)
G
V
,
G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FO R TEST C IRC U IT
SEE FIG UR E 12
I = 2 .6A
V = 1 6V
D
DS
0 . 1
1
1 0
1 0 0
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
T = 2 5°C
T = 1 50°C
J
J
V = 0 V
G S
V , So urce-to-D ra in Vo ltag e (V)
I
,
R
e
v
e
r
s
e
D
r
ai
n C
u
r
r
en
t
(
A
)
S D
SD
A
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7301
Fig 10a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
4.5V
Pulse Width
1
µs
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
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