HEXFET
ฎ
Power MOSFET
PD - 9.1104B
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Adavanced Process Technology
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Ultra Low On-Resistance
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P-Channel MOSFET
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7205
S O -8
V
DSS
= -30V
R
DS(on)
= 0.070
I
D
= -4.6A
8/25/97
T o p View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
Parameter Min. Typ. Max. Units
R
JA
Maximum Junction-to-Ambient
ญญญ ญญญ 50 ฐC/W
Parameter
Max.
Units
I
D
@ T
A
= 25ฐC
Continuous Drain Current, V
GS
@ 10V
-4.6
I
D
@ T
A
= 70ฐC
Continuous Drain Current, V
GS
@ 10V
-3.7
I
DM
Pulsed Drain Current
-15
P
D
@T
C
= 25ฐC
Power Dissipation
2.5
Linear Derating Factor
0.020
W/ฐC
V
GS
Gate-to-Source Voltage
ฑ 20
V
dv/dt
Peak Diode Recovery dv/dt
-3.0
V/nS
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
Absolute Maximum Ratings
A
Thermal Resistance Ratings
W
ฐC
IRF7205
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
ญญญ
ญญญ
V
V
GS
= 0V, I
D
= -250ตA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
ญญญ -0.024 ญญญ
V/ฐC
Reference to 25ฐC, I
D
= -1mA
ญญญ
ญญญ 0.070
V
GS
= -10V, I
D
= -4.6A
ญญญ
ญญญ 0.130
V
GS
= -4.5V, I
D
= -2.0A
V
GS(th)
Gate Threshold Voltage
-1.0
ญญญ
-3.0
V
V
DS
= V
GS
, I
D
= -250ตA
g
fs
Forward Transconductance
ญญญ
6.6
ญญญ
S
V
DS
= -15V, I
D
= -4.6A
ญญญ
ญญญ
-1.0
V
DS
= -24V, V
GS
= 0V
ญญญ
ญญญ
-5.0
V
DS
= -15V, V
GS
= 0V, T
J
= 70 ฐC
Gate-to-Source Forward Leakage
ญญญ
ญญญ
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
ญญญ
ญญญ
100
V
GS
= 20V
Q
g
Total Gate Charge
ญญญ
27
40
I
D
= -4.6A
Q
gs
Gate-to-Source Charge
ญญญ
5.2
ญญญ
nC
V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge
ญญญ
7.5
ญญญ
V
GS
= -10V
t
d(on)
Turn-On Delay Time
ญญญ
14
30
V
DD
= -15V
t
r
Rise Time
ญญญ
21
60
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
ญญญ
97
150
R
G
= 6.0
t
f
Fall Time
ญญญ
71
100
R
D
= 10
Between lead,6mm(0.25in.)
from package and center
of die contact
C
iss
Input Capacitance
ญญญ
870
ญญญ
V
GS
= 0V
C
oss
Output Capacitance
ญญญ
720
ญญญ
pF
V
DS
= -10V
C
rss
Reverse Transfer Capacitance
ญญญ
220
ญญญ
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
ญญญ
ญญญ
-1.2
V
T
J
= 25ฐC, I
S
= -1.25A, V
GS
= 0V
t
rr
Reverse Recovery Time
ญญญ
70
100
ns
T
J
= 25ฐC, I
F
= -4.6A
Q
rr
Reverse RecoveryCharge
ญญญ
100
180
nC
di/dt = 100A/ตs
t
on
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25ฐC (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
ญญญ
ญญญ
-15
ญญญ
ญญญ
-2.5
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
ญญญ
4.0
ญญญ
L
D
Internal Drain Inductance
ญญญ
2.5
ญญญ
nH
ns
nA
ตA
R
DS(ON)
Static Drain-to-Source On-Resistance
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
-4.6A, di/dt
90A/ตs, V
DD
V
(BR)DSS
,
T
J
150ฐC
Pulse width
300ตs; duty cycle
2%.
Surface mounted on FR-4 board, t
10sec.
S
D
G
S
D
G
IRF7205
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
-10V
Pulse Width
1
ตs
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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