Parameter

Max.

Units

Drain- Source Voltage

@ T

= 25°C

Continuous Drain Current, V

@ 10V

7.3

@ T

= 70°C

Continuous Drain Current, V

@ 10V

5.8

Pulsed Drain Current

= 25°C

Power Dissipation

2.5

= 70°C

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

Gate-to-Source Voltage

ą 20

GSM

Gate-to-Source Voltage Single Pulse tp<10ľs

Single Pulse Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

STG

Junction and Storage Temperature Range

-55 to + 150

°C

HEXFET

Power MOSFET

Fifth Generation HEXFET

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

DSS

= 30V

DS(on)

= 0.030

Generation V Technology

Ultra Low On-Resistance

N-Channel MOSFET

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

IRF7201

Description

Top View

08/15/03

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

°C/W

Thermal Resistance

Absolute Maximum Ratings

www.irf.com

SO-8

PD- 91100D

IRF7201

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

= 0V, I

= 250ľA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.024

V/°C Reference to 25°C, I

= 1mA

0.030

= 10V, I

= 7.3A

0.050

= 4.5V, I

= 3.7A

GS(th)

Gate Threshold Voltage

1.0

= V

, I

= 250ľA

Forward Transconductance

5.8

= 15V, I

= 2.3A

1.0

= 24V, V

= 0V

= 24V, V

= 0V, T

= 125°C

Gate-to-Source Forward Leakage

-100

= -20V

Gate-to-Source Reverse Leakage

100

= 20V

Total Gate Charge

= 4.6A

Gate-to-Source Charge

2.3

3.5

= 24V

Gate-to-Drain ("Miller") Charge

6.3

9.5

= 10V, See Fig. 10

d(on)

Turn-On Delay Time

7.0

= 15V

Rise Time

= 4.6A

d(off)

Turn-Off Delay Time

= 6.2

Fall Time

= 3.2

iss

Input Capacitance

550

= 0V

oss

Output Capacitance

260

= 25V

rss

Reverse Transfer Capacitance

100

= 1.0MHz, See Fig. 9

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

GSS

ľA

DS(on)

Static Drain-to-Source On-Resistance

DSS

Drain-to-Source Leakage Current

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.2

= 25°C, I

= 4.6A, V

= 0V

Reverse Recovery Time

= 25°C, I

= 4.6A

Reverse RecoveryCharge

110

di/dt = 100A/ľs

Source-Drain Ratings and Characteristics

2.5

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

4.6A, di/dt

120A/ľs, V

(BR)DSS

150°C

Notes:

= 15V, starting T

= 25°C, L = 6.6mH

= 25

, I

= 4.6A. (See Figure 8)

Pulse width

300ľs; duty cycle

When mounted on 1 inch square copper board, t<10 sec

IRF7201

www.irf.com

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

0.1

20ľs PULSE WIDTH
T = 25°C

V , Drain-to-Source Voltage (V)

3.0V

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

,
D

r
ai

t
o
-
S

o
u
r
c
e

u
r
r
ent

(
A

)

100

0.1

V , Drain-to-Source Voltage (V)

DI ,

r
a
i
n-

t
o
-
S

our

ce C

u
r
r
en

t
(
A

)

20ľs PULSE WIDTH
T = 150°C

3.0V

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

100

3.0

3.5

4.0

4.5

5.0

5.5

T = 25°C

T = 150°C

V , Gate-to-Source Voltage (V)

, Dra

i
n
-
to

-
S

u
rc

u
rre

t
(A)

V = 10V
20ľs PULSE WIDTH

Fig 4. Typical Source-Drain Diode

Forward Voltage

0.1

100

0.4

0.6

0.8

1.0

1.2

T = 25°C

T = 150°C

V = 0V

V , Source-to-Drain Voltage (V)

I , R

e
v
e
rs

e
D

r
a
i
n
C

u
rre

n
t
(A

)

IRF7201

www.irf.com

Fig 5. Normalized On-Resistance

Vs. Temperature

0.0

0.5

1.0

1.5

2.0

-60 -40

-20

100 120 140 160

T , Junction Temperature (°C)

, D

r
a
i
n
-
to

-
S

o
u
rc

e
O

n
R

e
s
i
s
t
a
n
c
e

(
on)

o
r
m

a
l
i
ze

V = 10V

I = 4.6A

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

120

160

200

100

125

150

i
ngl

e P

u
l
s
e A

v
al

anche E

nergy (m

Starting T , Junction Temperature (°C)

I
TOP 2.1A
3.7A
BOTTOM 4.6A

Fig 6. On-Resistance Vs. Drain Current

Fig 7. On-Resistance Vs. Gate Voltage

0.02

0.03

0.04

0.05

, D

r
a
i
n
-
to

-S

o
u
rc

e
O

n
R

e
s
i
s
t
a
n
c
e

(
on)

(

)

V , Gate-to-Source Voltage (V)

I = 7.3A

0.00

0.05

0.10

0.15

0.20

I , Drain Current (A)

(

)

V = 10V

V = 4.5V

(
o
n)

, D

r
a
i
n
-
to

-
S

o
u
rc

e
O

n
R

e
s
i
s
t
a
n
c
e

IRF7201

www.irf.com

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

200

400

600

800

1000

100

,
Ca

c
i
t
a
n
c
e (

p
F)

V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C

GS
iss gs gd ds
rss gd
oss ds gd

iss

oss

rss

Q , Total Gate Charge (nC)

, G

a
te

-to

-
S

o
u
r
c
e
V

o
lta

g
e
(V

)

V = 24V
V = 15V

DS
DS

I = 4.6A

0.1

100

0.00001

0.0001

0.001

0.01

0.1

100

Notes:

1. Duty factor D = t / t
2. Peak T = P

x Z

+ T

thJA

t , Rectangular Pulse Duration (sec)

Ther

a
l
R

e
sponse

)

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRF7201