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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

35*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

140

PD @ TC = 25°C

Max. Power Dissipation

125

Linear Derating Factor

1.0

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

350

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

12.5

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10s)

Weight

9.3 (Typical)

06/08/01

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Product Summary

Part Number

BVDSS

DS(on)

IRF5M3710

100V

0.03

35A*

For footnotes refer to the last page

HEXFET

POWER MOSFET

IRF5M3710

THRU-HOLE (TO-254AA)

100V, N-CHANNEL

Fifth Generation HEXFET

power MOSFETs from

International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.

These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.

Features:

Low R

DS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

TO-254AA

* Current is limited by package

PD - 94234

IRF5M3710

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Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 250

BVDSS/

TJ Temperature Coefficient of Breakdown

0.11

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.03

VGS = 10V, ID = 28A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 250

gfs

Forward Transconductance

S (

)

VDS =15V, IDS = 28A

IDSS

Zero Gate Voltage Drain Current

VDS = 100V ,VGS=0V

250

VDS = 80V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS =-20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

200

VGS =10V, ID = 28A

Qgs

Gate-to-Source Charge

VDS = 80V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 50V, ID = 28A,

Rise Time

105

VGS = 10V, RG = 2.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.8

Measured from drain lead (6mm /

0.25in. from package ) to source

lead (6mm/0.25in. from pacakge

Ciss

Input Capacitance

2920

VGS = 0V, VDS = 25V

Coss

Output Capacitance

670

f = 1.0MHz

Crss

Reverse Transfer Capacitance

340

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

1.0

°C/W

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

35*

ISM

Pulse Source Current (Body Diode)

140

VSD

Diode Forward Voltage

1.3

= 25°C, IS = 28A, VGS = 0V

trr

Reverse Recovery Time

280

Tj = 25°C, IF = 28A, di/dt

100A/

QRR

Reverse Recovery Charge

2.0

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

* Current is limited by package

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IRF5M3710

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

4.0

5.0

6.0

7.0

8.0

9.0

10.0

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

35A

IRF5M3710

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

1000

2000

3000

4000

5000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

Ciss

Coss

Crss

120

160

200

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

28A

= 20V

= 50V

= 80V

100

1000

0.4

0.8

1.2

1.6

2.0

2.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

VDS , Drain-toSource Voltage (V)

100

1000

I D

, Drain-to-Source Current (A)

Tc = 25°C
Tj = 150°C
Single Pulse

1ms

10ms

OPERATION IN THIS AREA
LIMITED BY R DS(on)

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IRF5M3710

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

Pulse Width

µs

Duty Factor

0.1 %

D.U.T.

90%

10%
V

d(on)

d(off)

100

125

150

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRF5M3710