Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
2.7
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
2.2
A
I
DM
Pulsed Drain Current
11
P
D
@T
A
= 25°C
Power Dissipation
0.96
P
D
@T
A
= 70°C
Power Dissipation
0.62
Linear Derating Factor
7.7
mW/°C
V
GS
Gate-to-Source Voltage
± 12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
3/1/01
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
130
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
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1
IRF5852
HEXFET
®
Power MOSFET
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R
DS(on)
reduction enables an increase in current-handling
capability.
Description
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Low Gate Charge
PD - 93999
TSOP-6
Top View
V
DSS
R
DS(on)
max (
)
)
)
)
)
I
D
20 V
0.090@V
GS
= 4.5V
2.7A
0.120@V
GS
= 2.5V
2.2A
S 2
G2
G1
3
2
1
4
5
6
D1
D2
S 1
IRF5852
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25°C, I
S
= 0.96A, V
GS
= 0V
t
rr
Reverse Recovery Time
25
38
ns
T
J
= 25°C, I
F
= 0.96A
Q
rr
Reverse Recovery Charge
6.5
9.8
nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
11
0.96
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
400µs; duty cycle
2%.
Surface mounted on FR-4 board, t
5sec.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.016
V/°C
Reference to 25°C, I
D
= 1mA
0.090
V
GS
= 4.5V, I
D
= 2.7A
0.120
V
GS
= 2.5V, I
D
= 2.2A
V
GS(th)
Gate Threshold Voltage
0.60
1.25
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
5.2
S
V
DS
= 10V, I
D
= 2.7A
1.0
V
DS
= 16V, V
GS
= 0V
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage
100
V
GS
= 12V
Gate-to-Source Reverse Leakage
-100
V
GS
= -12V
Q
g
Total Gate Charge
4.0
6.0
I
D
= 2.7A
Q
gs
Gate-to-Source Charge
0.95
nC
V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge
0.88
V
GS
= 4.5V
t
d(on)
Turn-On Delay Time
6.6
V
DD
= 10V
t
r
Rise Time
1.2
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
15
R
G
= 6.2
t
f
Fall Time
2.4
V
GS
= 4.5V
C
iss
Input Capacitance
400
V
GS
= 0V
C
oss
Output Capacitance
48
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
32
= 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF5852
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3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
1.5
2.0
2.5
3.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
4.5V
2.7A
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF5852
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
2
4
6
8
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
2.7A
V
= 10V
DS
V
= 16V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
IRF5852
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5
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
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