IRF5210
HEXFET
®
Power MOSFET
PD - 91434A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
-40
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ -10V
-29
A
I
DM
Pulsed Drain Current
-140
P
D
@T
C
= 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
780
mJ
I
AR
Avalanche Current
-21
A
E
AR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw
10 lbf·in (1.1N·m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
°C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
V
DSS
= -100V
R
DS(on)
= 0.06
I
D
= -40A
TO-220AB
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
5/13/98
S
D
G
IRF5210
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.6
V
T
J
= 25°C, I
S
= -21A, V
GS
= 0V
t
rr
Reverse Recovery Time
170
260
ns
T
J
= 25°C, I
F
= -21A
Q
rr
Reverse RecoveryCharge
1.2
1.8
µC
di/dt = -100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-100
V
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.11
V/°C
Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.06
V
GS
= -10V, I
D
= -24A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance
10
S
V
DS
= -50V, I
D
= -21A
-25
µ A
V
DS
= -100V, V
GS
= 0V
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
n A
V
GS
= -20V
Q
g
Total Gate Charge
180
I
D
= -21A
Q
gs
Gate-to-Source Charge
25
nC
V
DS
= -80V
Q
gd
Gate-to-Drain ("Miller") Charge
97
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
17
V
DD
= -50V
t
r
Rise Time
86
I
D
= -21A
t
d(off)
Turn-Off Delay Time
79
R
G
= 2.5
t
f
Fall Time
81
R
D
= 2.4
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
2700
V
GS
= 0V
C
oss
Output Capacitance
790
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
450
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-21A, di/dt
-480A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Notes:
V
DD
= -25V, starting T
J
= 25°C, L = 3.5mH
R
G
= 25
, I
AS
= -21A. (See Figure 12)
Pulse width
300µs; duty cycle
2%.
-40
-140
A
S
D
G
S
D
G
IRF5210
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
D
D S
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D rain-to-S ourc e V olta ge (V )
VGS
TO P - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V
-4.5 V
4 0µ s P U LS E W ID T H
T = 2 5°C
c
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
D
D S
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D ra in-to-S o u rce V o lta ge (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5V
4 0µ s P U LS E W ID T H
T = 1 75 °C
C
1
1 0
1 0 0
1 0 0 0
4
5
6
7
8
9
1 0
T = 2 5 °C
J
G S
D
A
-
I
,
D
r
ai
n-
t
o
-
S
ourc
e
C
u
rr
ent
(
A
)
-V , G a te -to -S o u rc e V o lta g e (V )
T = 1 7 5 °C
V = -5 0 V
4 0 µ s P U L S E W ID T H
D S
J
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction T em perature (°C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed)
A
V = -1 0V
G S
I = -35 A
D
IRF5210
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
5 0 0 0
6 0 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
A
D S
-V , D rain-to-S ourc e V oltage (V )
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s g d d s
rs s g d
o ss ds g d
C
is s
C
os s
C
rs s
0
4
8
1 2
1 6
2 0
0
4 0
8 0
1 2 0
1 6 0
2 0 0
G
GS
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , Total G ate C harge (nC )
V = -80 V
V = -50 V
V = -20 V
D S
D S
D S
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
I = -2 1A
D
1
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
T = 2 5°C
J
V = 0V
G S
S D
SD
A
-I
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , S o urc e-to -D ra in V o lta ge (V )
T = 1 75 °C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
1 0 0 0
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
1 0 m s
A
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , D ra in -to -S o urc e V o lta g e (V )
D S
D
1 0 µ s
1 0 0 µ s
1 m s
T = 25 °C
T = 17 5°C
S ing le P u ls e
C
J
IRF5210
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25
50
75
100
125
150
175
0
10
20
30
40
50
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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