IRF520N
HEXFET
®
Power MOSFET
PD - 91339A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
9.7
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
6.8
A
I
DM
Pulsed Drain Current
38
P
D
@T
C
= 25°C
Power Dissipation
48
W
Linear Derating Factor
0.32
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
91
mJ
I
AR
Avalanche Current
5.7
A
E
AR
Repetitive Avalanche Energy
4.8
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf·in (1.1N·m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.1
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
°C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
V
DSS
= 100V
R
DS(on)
= 0.20
I
D
= 9.7A
TO-220AB
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
5/13/98
IRF520N
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 5.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
99
150
ns
T
J
= 25°C, I
F
= 5.7A
Q
rr
Reverse RecoveryCharge
390
580
nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.11
V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.20
V
GS
= 10V, I
D
= 5.7A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
2.7
S
V
DS
= 50V, I
D
= 5.7A
25
µA
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
25
I
D
= 5.7A
Q
gs
Gate-to-Source Charge
4.8
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
11
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
4.5
V
DD
= 50V
t
r
Rise Time
23
I
D
= 5.7A
t
d(off)
Turn-Off Delay Time
32
R
G
= 22
t
f
Fall Time
23
R
D
= 8.6
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
330
V
GS
= 0V
C
oss
Output Capacitance
92
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
54
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
5.7A, di/dt
240A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 4.7mH
R
G
= 25
, I
AS
= 5.7A. (See Figure 12)
Pulse width
300µs; duty cycle
2%.
9.7
38
A
IRF520N
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I
,
D
r
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
nt
(
A
)
D
V , D rain -to -S ourc e V o lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20 µ s P U LS E W ID TH
T = 2 5°C
C
A
4.5 V
1
1 0
1 0 0
0.1
1
1 0
1 0 0
4 .5V
I
,
D
r
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
nt
(
A
)
D
V , D rain-to-S ource V oltage (V )
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 0µ s P U L S E W ID T H
T = 17 5°C
C
A
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 25 °C
J
G S
V , G ate-to -S ource V olta ge (V )
D
I
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V = 5 0 V
2 0 µ s P U LS E W ID TH
D S
T = 17 5 °C
J
A
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (°C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(N
o
r
m
a
li
z
e
d
)
V = 1 0V
G S
A
I = 9.5 A
D
IRF520N
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to -S ource V olta ge (V )
A
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s g d
C
iss
C
os s
C
rs s
0
4
8
1 2
1 6
2 0
0
5
1 0
1 5
2 0
2 5
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
V = 80 V
V = 50 V
V = 20 V
D S
D S
D S
A
F O R TE S T C IR C U IT
S E E F IG U R E 1 3
I = 5.7 A
D
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
T = 2 5°C
J
V = 0V
G S
V , S ourc e-to -D rain V o ltage (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 17 5°C
J
0.1
1
1 0
1 0 0
1
1 0
1 0 0
1 0 0 0
V , D rain-to-S ource V oltage (V )
D S
I
,
Dr
ai
n
C
u
r
r
e
nt
(
A
)
O P E R A T IO N IN T H IS A R E A LIM IT E D
B Y R
D
D S (o n)
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
A
T = 25 °C
T = 17 5°C
S ing le P u ls e
C
J
IRF520N
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
Fig 10b. Switching Time Waveforms
R
D
V
GS
R
G
D.U.T.
10V
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
+
-
V
DD
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
IRF520N
Fig 12a. Unclamped Inductive Test Circuit
V
DS
L
D.U.T.
V
DD
I
AS
t
p
0.01
R
G
+
-
t
p
V
DS
I
AS
V
DD
V
(BR)DSS
10 V
Fig 12b. Unclamped Inductive Waveforms
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
.2
µ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
4 0
8 0
1 2 0
1 6 0
2 0 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
J
E
, S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
AS
A
S tarting T , J unc tion T em perature (°C )
V = 25 V
I
T O P 2 .3 A
4.0 A
B O T T O M 5 .7A
D D
D
IRF520N
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
·
dv/dt controlled by R
G
·
Driver same type as D.U.T.
·
I
SD
controlled by Duty Factor "D"
·
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
·
Low Stray Inductance
·
Ground Plane
·
Low Leakage Inductance
Current Transformer
*
IRF520N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
TO-220AB
Part Marking Information
L E A D A S S IG NM E NT S
1 - G A T E
2 - D R A IN
3 - S O U RC E
4 - D R A IN
- B -
1 .32 (.05 2)
1 .22 (.04 8)
3 X
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
4.69 ( .18 5 )
4.20 ( .16 5 )
3X
0.93 (.03 7)
0.69 (.02 7)
4.06 (.16 0)
3.55 (.14 0)
1.15 (.04 5)
M IN
6.47 (.25 5)
6.10 (.24 0)
3 .7 8 (.149 )
3 .5 4 (.139 )
- A -
10 .54 (.4 15)
10 .29 (.4 05)
2.87 (.11 3)
2.62 (.10 3)
1 5.24 (.60 0)
1 4.84 (.58 4)
1 4.09 (.55 5)
1 3.47 (.53 0)
3 X
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
2.54 (.10 0)
2 X
0 .3 6 (.01 4) M B A M
4
1 2 3
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1M
A S S E M B L Y
L O T C O D E
D A T E C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IR F 1 0 10
9B 1 M
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98
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