IRF4905S/L
HEXFET
®
Power MOSFET
PD - 9.1478A
l
Advanced Process Technology
l
Surface Mount (IRF4905S)
l
Low-profile through-hole (IRF4905L)
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
8/25/97
S
D
G
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF4905L) is available for low-
profile applications.
Description
V
DSS
= -55V
R
DS(on)
= 0.02
I
D
= -74A
2
D P a k
T O - 2 6 2
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
°C/W
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
-74
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ -10V
-52
A
I
DM
Pulsed Drain Current
-260
P
D
@T
A
= 25°C
Power Dissipation
3.8
W
P
D
@T
C
= 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
930
mJ
I
AR
Avalanche Current
-38
A
E
AR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
IRF4905S/L
Starting T
J
= 25°C, L = 1.3mH
R
G
= 25
, I
AS
= -38A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
-38A, di/dt
-270A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width
300µs; duty cycle
2%.
Uses IRF4905 data and test conditions
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
V
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.05
V/°C
Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.02
V
GS
= -10V, I
D
= -38A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance
21
S
V
DS
= -25V, I
D
= -38A
-25
µA
V
DS
= -55V, V
GS
= 0V
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
180
I
D
= -38A
Q
gs
Gate-to-Source Charge
32
nC
V
DS
= -44V
Q
gd
Gate-to-Drain ("Miller") Charge
86
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
18
V
DD
= -28V
t
r
Rise Time
99
I
D
= -38A
t
d(off)
Turn-Off Delay Time
61
R
G
= 2.5
t
f
Fall Time
96
R
D
= 0.72
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
3400
V
GS
= 0V
C
oss
Output Capacitance
1400
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
640
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.6
V
T
J
= 25°C, I
S
= -38A, V
GS
= 0V
t
rr
Reverse Recovery Time
89
130
ns
T
J
= 25°C, I
F
= -38A
Q
rr
Reverse Recovery Charge
230
350
nC
di/dt = -100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
S
D
G
-74
-260
IRF4905S/L
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
D
D S
2 0µ s PU LS E W ID TH
T = 2 5°C
c
A
-
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e C
u
r
r
e
n
t
(
A
)
-V , Drain -to -So urce Vo ltag e (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
-4.5 V
1
10
100
1000
0.1
1
10
100
D
D S
A
-
I
,
D
r
ai
n-
t
o
-
S
o
u
r
c
e
C
u
r
r
en
t
(
A
)
-V , Dra in -to-So urce V oltag e (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
-4.5 V
20 µ s PU LSE W ID TH
T = 1 75°C
C
1
1 0
1 0 0
1 0 0 0
4
5
6
7
8
9
1 0
T = 2 5 °C
J
G S
D
A
-
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , Ga te -to -S o u rce V o ltag e (V )
V = -2 5 V
2 0 µ s P U L S E W ID T H
DS
T = 1 7 5 °C
J
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Ju nctio n T emp eratu re (°C)
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
A
V = -10 V
G S
I = -64 A
D
T
J
= 25°C
T
J
= 175°C
IRF4905S/L
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
7000
1
10
100
C
,
C
a
pac
i
t
anc
e (
p
F
)
A
D S
-V , Drain -to -So urce V oltag e (V)
V = 0 V, f = 1M H z
C = C + C , C SH O RTE D
C = C
C = C + C
G S
is s gs gd ds
rs s gd
o ss ds g d
C
is s
C
o s s
C
rs s
0
4
8
12
16
20
0
40
80
120
160
200
G
GS
A
-
V
,
G
a
t
e
-
t
o
-
S
our
c
e
V
o
l
t
age (
V
)
Q , To tal G ate C ha rg e (n C)
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
I = -3 8A
V = - 44V
V = - 28V
D
DS
DS
1
1 0
1 0 0
1 0 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
1 . 6
1 . 8
T = 25 °C
J
V = 0 V
G S
S D
SD
A
-I
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , S ou rce -to -Drain V olta ge (V )
T = 17 5°C
J
1
10
100
1000
1
10
100
OPE R ATIO N IN TH IS A RE A LI MI TE D
BY R
D S(o n)
10m s
A
-
I
, D
r
a
i
n
C
u
r
r
e
n
t (
A
)
-V , Dra in-to-So urce V olta ge (V )
D S
D
100µ s
1m s
T = 2 5°C
T = 1 75°C
Sin gle Pu ls e
C
J
IRF4905S/L
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25
50
75
100
125
150
175
0
20
40
60
80
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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