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1
10/30/03
IRF3711Z
IRF3711ZS
IRF3711ZL
HEXFET
®
Power MOSFET
Notes
through
are on page 12
Applications
Benefits
l
Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
D
2
Pak
IRF3711ZS
TO-220AB
IRF3711Z
TO-262
IRF3711ZL
V
DSS
R
DS(on)
max
Qg
20V
6.0m
:
16nC
PD - 94757A
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
f
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
i
1.89
°C/W
R
CS
Case-to-Sink, Flat Greased Surface
f
0.50
R
JA
Junction-to-Ambient
fiÃ
62
R
JA
Junction-to-Ambient (PCB Mount)
gi
40
10 lbf
y
in (1.1N
y
m)
300 (1.6mm from case)
-55 to + 175
79
0.53
40
Max.
92
h
65
h
380
± 20
20
IRF3711Z/S/L
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
20
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.013
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
4.8
6.0
m
5.9
7.3
V
GS(th)
Gate Threshold Voltage
1.55
2.0
2.45
V
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
-5.6
mV/°C
I
DSS
Drain-to-Source Leakage Current
1.0
µA
150
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
gfs
Forward Transconductance
46
S
Q
g
Total Gate Charge
16
24
Q
gs1
Pre-Vth Gate-to-Source Charge
4.6
Q
gs2
Post-Vth Gate-to-Source Charge
1.4
nC
Q
gd
Gate-to-Drain Charge
5.3
Q
godr
Gate Charge Overdrive
4.7
See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
6.7
Q
oss
Output Charge
9.5
nC
t
d(on)
Turn-On Delay Time
12
t
r
Rise Time
16
t
d(off)
Turn-Off Delay Time
15
ns
t
f
Fall Time
5.4
C
iss
Input Capacitance
2150
C
oss
Output Capacitance
680
pF
C
rss
Reverse Transfer Capacitance
320
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
Ã
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
92
h
(Body Diode)
A
I
SM
Pulsed Source Current
380
(Body Diode)
Ã
V
SD
Diode Forward Voltage
1.0
V
t
rr
Reverse Recovery Time
16
24
ns
Q
rr
Reverse Recovery Charge
6.0
9.0
nC
MOSFET symbol
V
GS
= 4.5V, I
D
= 12A
e
V
GS
= 4.5V
Typ.
I
D
= 12A
V
GS
= 0V
V
DS
= 10V
T
J
= 25°C, I
F
= 12A, V
DD
= 10V
di/dt = 100A/µs
e
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Clamped Inductive Load
V
DS
= 10V, I
D
= 12A
V
DS
= 10V, V
GS
= 0V
V
DD
= 10V, V
GS
= 4.5V
e
I
D
= 12A
V
DS
= 10V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
e
V
GS
= 20V
V
GS
= -20V
Conditions
7.9
Max.
130
12
= 1.0MHz
IRF3711Z/S/L
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3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
3.0V
VGS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.1
1
10
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
3.0V
VGS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
VDS = 10V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 30A
VGS = 10V
IRF3711Z/S/L
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
5
10
15
20
25
30
35
40
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 15V
VDS= 10V
ID= 12A
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
0
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRF3711Z/S/L
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIMITED BY PACKAGE
-75 -50 -25
0
25
50
75 100 125 150 175 200
TJ , Temperature ( °C )
0.4
0.8
1.2
1.6
2.0
2.4
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 250µA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
i (sec)
0.894 0.000306
0.600 0.001019
0.401 0.006662
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
Ci=
i
/
Ri
Ci=
i
/
Ri
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