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1
8/22/00
IRF3708
IRF3708S
SMPS MOSFET
HEXFET
®
Power MOSFET
l
High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
Benefits
Applications
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max
I
D
30V
12m
62A
Notes
through
are on page 10
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
DS
Drain-Source Voltage
30
V
V
GS
Gate-to-Source Voltage
±12 V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
62
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ 10V
52
A
I
DM
Pulsed Drain Current
248
P
D
@T
C
= 25°C
Maximum Power Dissipation
87
W
P
D
@T
C
= 70°C
Maximum Power Dissipation
61
W
Linear Derating Factor 0.58 W/°C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to + 175
°C
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D
2
Pak
IRF3708S
TO-220AB
IRF3708
TO-262
IRF3708L
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.73
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
°C/W
R
JA
Junction-to-Ambient
62
R
JA
Junction-to-Ambient (PCB mount)*
40
IRF3708L
l
High Frequency Buck Converters for
Computer Processor Power
PD - 93938B
IRF3708/3708S/3708L
2
www.irf.com
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
213
mJ
I
AR
Avalanche Current
62
A
Avalanche Characteristics
S
D
G
Diode Characteristics
62
248
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
49
S
V
DS
= 15V, I
D
= 50A
Q
g
Total Gate Charge
24
I
D
= 24.8A
Q
gs
Gate-to-Source Charge
6.7
nC
V
DS
= 15V
Q
gd
Gate-to-Drain ("Miller") Charge
5.8
V
GS
= 4.5V
Q
oss
Output Gate Charge
14
21
V
GS
= 0V, I
D
= 24.8A, V
DS
= 15V
t
d(on)
Turn-On Delay Time
7.2
V
DD
= 15V
t
r
Rise Time
50
I
D
= 24.8A
t
d(off)
Turn-Off Delay Time
17.6
R
G
= 0.6
t
f
Fall Time
3.7
V
GS
= 4.5V
C
iss
Input Capacitance
2417
V
GS
= 0V
C
oss
Output Capacitance
707
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
52
pF
= 1.0MHz
V
SD
Diode Forward Voltage
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
0.88
1.3
V
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
0.80
T
J
= 125°C, I
S
= 31A, V
GS
= 0V
t
rr
Reverse Recovery Time
41
62
ns
T
J
= 25°C, I
F
= 31A, V
R
=20V
Q
rr
Reverse Recovery Charge
64
96
nC
di/dt = 100A/µs
t
rr
Reverse Recovery Time
43
65
ns
T
J
= 125°C, I
F
= 31A, V
R
=20V
Q
rr
Reverse Recovery Charge
70
105
nC
di/dt = 100A/µs
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter
Min.
Typ.
Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.028 V/°C Reference to 25°C, I
D
= 1mA
8
12.0
V
GS
= 10V, I
D
= 15A
9.5
13.5 m
V
GS
= 4.5V, I
D
= 12A
14.5
29
V
GS
= 2.8V, I
D
= 7.5A
V
GS(th)
Gate Threshold Voltage
0.6
2.0
V
V
DS
= V
GS
, I
D
= 250µA
20
µA
V
DS
= 24V, V
GS
= 0V
100
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
200
V
GS
= 12V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -12V
IRF3708/3708S/3708L
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20
0
20
40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
62A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
2.7V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
2.7V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
100
1000
2.0
3.0
4.0
5.0
6.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
IRF3708/3708S/3708L
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
0
700
1400
2100
2800
3500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
10
20
30
40
50
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
24.8A
V
= 15V
DS
0.1
1
10
100
1000
0.2
0.8
1.4
2.0
2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF3708/3708S/3708L
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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