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IRF3415S/L

HEXFET

Power MOSFET

PD - 91509C

Advanced Process Technology

Surface Mount (IRF3415S)

Low-profile through-hole (IRF3415L)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

5/13/98

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D

Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profile applications.

Description

DSS

= 150V

DS(on)

= 0.042

= 43A

D P ak

T O -26 2

Parameter

Typ.

Max.

Units

Junction-to-Case

0.75

Junction-to-Ambient ( PCB Mounted,steady-state)**

Thermal Resistance

°C/W

Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

150

= 25°C

Power Dissipation

3.8

= 25°C

Power Dissipation

200

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

590

Avalanche Current

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

IRF3415S/L

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

150

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.17

V/°C

Reference to 25°C, I

= 1mA

DS(on)

Static Drain-to-Source On-Resistance

0.042

= 10V, I

= 22A

GS(th)

Gate Threshold Voltage

2.0

4.0

= V

, I

= 250µA

Forward Transconductance

= 50V, I

= 22A

µ A

= 150V, V

= 0V

250

= 120V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

100

= 20V

Gate-to-Source Reverse Leakage

-100

n A

= -20V

Total Gate Charge

200

= 22A

Gate-to-Source Charge

= 120V

Gate-to-Drain ("Miller") Charge

= 10V, See Fig. 6 and 13

d(on)

Turn-On Delay Time

= 75V

Rise Time

= 22A

d(off)

Turn-Off Delay Time

= 2.5

Fall Time

= 3.3

See Fig. 10

Between lead,

and center of die contact

iss

Input Capacitance

2400

= 0V

oss

Output Capacitance

640

= 25V

rss

Reverse Transfer Capacitance

340

= 1.0MHz, See Fig. 5

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

GSS

DSS

Drain-to-Source Leakage Current

7.5

Internal Source Inductance

Starting T

= 25°C, L = 2.4mH

= 25

, I

= 22A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

22A, di/dt

820A/µs, V

(BR)DSS

175°C

Pulse width

300µs; duty cycle

2%.

Uses IRF3415 data and test conditions

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 22A, V

= 0V

Reverse Recovery Time

260

390

= 25°C, I

= 22A

Reverse Recovery Charge

2.2

3.3

µC

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

150

IRF3415S/L

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20

20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

37A

100

1000

100

20us PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

100

20us PULSE WIDTH
T = 175 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

5.0V

100

1000

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 175 C

IRF3415S/L

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

1000

2000

3000

4000

5000

6000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

Ciss

Coss

Crss

120

160

200

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

22A

= 30V

= 75V

= 120V

0.1

100

1000

0.2

0.6

1.0

1.4

1.8

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 175 C

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 175 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

IRF3415S/L

Fig 10a. Switching Time Test Circuit

90%

10%
V

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Pulse Width

µs

Duty Factor

0.1 %

D.U.T.

10V

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

100

125

150

175

T , Case Temperature

( C)

I , Drain Current (A)

Part Number IRF3415L