Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

5.5

ID @ VGS = 10V, TC = 100°C

Continuous Drain Current

3.5

IDM

Pulsed Drain Current

2 2

PD @ TC = 25°C

Max. Power Dissipation

7 5

Linear Derating Factor

0.60

W/°C

VGS

Gate-to-Source Voltage

ą20

EAS

Single Pulse Avalanche Energy

1.7

IAR

Avalanche Current

5.5

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

11.5 (typical)

PD - 90335F

01/22/01

www.irf.com

Product Summary

Part Number B

VDSS

DS(on)

IRF330 400V 1.00

5.5A

For footnotes refer to the last page

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6760

HEXFET

TRANSISTORS

JANTXV2N6760

THRU-HOLE (TO-204AA/AE)

[REF:MIL-PRF-19500/542]

IRF330

400V, N-CHANNEL

The HEXFET

technology is the key to International

Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.

They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.

TO-3

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

IRF330

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction to Case

1.67

RthJA

Junction to Ambient

-- 30

Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

Continuous Source Current (Body Diode)

5.5

ISM

Pulse Source Current (Body Diode)

2 2

VSD

Diode Forward Voltage

1.4

= 25°C, IS =5.5A, VGS = 0V

trr

Reverse Recovery Time

700

Tj = 25°C, IF = 5.5A, di/dt

100A/

QRR

Reverse Recovery Charge

6.2

ĩc

VDD

50V

t o n

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

For footnotes refer to the last page

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

4 00

VGS = 0V, ID = 1.0mA

BVDSS/

Temperature Coefficient of Breakdown

0.46

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

-- 1.00 VGS = 10V, ID =3.5A

Resistance

-- 1.22

VGS =10V, ID =5.5A

VGS(th)

Gate Threshold Voltage

2.0

-- 4.0 V VDS = VGS, ID =250ĩA

gfs

Forward Transconductance

2.9

S (

)

VDS > 15V, IDS =3.5A

IDSS

Zero Gate Voltage Drain Current

2 5

VDS=320V, VGS=0V

2 5 0

VDS =320V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS =20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS =-20V

Total Gate Charge

1 7

3 9

VGS =10V, ID=5.5A

Qgs

Gate-to-Source Charge

2.0

6.0

VDS =200V

Qgd

Gate-to-Drain (`Miller') Charge

8.0

2 0

(on)

Turn-On Delay Time

3 0

VDD =200V, ID =5.5A,

t r

Rise Time

4 0

RG =7.5

(off)

Turn-Off Delay Time

8 0

Fall Time

3 5

LS + LD

Total Inductance

6.1

Ciss

Input Capacitance

620

VGS = 0V, VDS =25V

Coss

Output Capacitance

200

f = 1.0MHz

Crss

Reverse Transfer Capacitance

7 5

n s

Measured from the center of
drain pad to center of source
p a d

Part Number IRF330