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IRF2807S
IRF2807L
HEXFET
®
Power MOSFET
02/14/02
V
DSS
= 75V
R
DS(on)
= 13m
I
D
= 82A
S
D
G
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF2807L) is available for low-
profile applications.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
82
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
58
A
I
DM
Pulsed Drain Current
280
P
D
@T
C
= 25°C
Power Dissipation
230
W
Linear Derating Factor
1.5
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
I
AR
Avalanche Current
43
A
E
AR
Repetitive Avalanche Energy
23
mJ
dv/dt
Peak Diode Recovery dv/dt
5.9
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf·in (1.1N·m)
D
2
Pak
IRF2807S
TO-262
IRF2807L
www.irf.com
1
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.65
R
JA
Junction-to-Ambient (PCB mount)**
40
Thermal Resistance
°C/W
PD - 94170
IRF2807S/IRF2807L
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25°C, I
S
= 43A, V
GS
= 0V
t
rr
Reverse Recovery Time
100
150
ns
T
J
= 25°C, I
F
= 43A
Q
rr
Reverse Recovery Charge
410
610
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
82
280
A
Starting T
J
= 25°C, L = 370µH
R
G
= 25
, I
AS
= 43A, V
GS
=10V (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
I
SD
43A, di/dt
300A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width
400µs; duty cycle
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
75
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.074
V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
13
m
V
GS
= 10V, I
D
= 43A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
38
S
V
DS
= 50V, I
D
= 43A
25
µA
V
DS
= 75V, V
GS
= 0V
250
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
160
I
D
= 43A
Q
gs
Gate-to-Source Charge
29
nC
V
DS
= 60V
Q
gd
Gate-to-Drain ("Miller") Charge
55
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
13
V
DD
= 38V
t
r
Rise Time
64
I
D
= 43A
t
d(off)
Turn-Off Delay Time
49
R
G
= 2.5
t
f
Fall Time
48
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
3820
V
GS
= 0V
C
oss
Output Capacitance
610
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
130
pF
= 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy
1280
340
mJ
I
AS
= 50A, L = 370µH
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRF2807S/IRF2807L
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4.0
5.0
6.0
7.0
8.0
9.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
71A
IRF2807S/IRF2807L
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
40
80
120
160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
43A
V
= 15V
DS
V
= 37V
DS
V
= 60V
DS
0.1
1
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
IRF2807S/IRF2807L
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
20
40
60
80
100
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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