Äîêóìåíòàöèÿ è îïèñàíèÿ www.docs.chipfind.ru

Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

131

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

680

= 25°C

Power Dissipation

200

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

590

Avalanche Current

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw

10 lbf·in (1.1N·m)

HEXFET

Power MOSFET

Stripe Planar design of HEXFET

Power MOSFETs

utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.

Absolute Maximum Ratings

DSS

= 55V

DS(on)

= 5.3m

= 131A

Description

1/11/01

www.irf.com

AUTOMOTIVE MOSFET

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

0.75

°C/W

Junction-to-Ambient (PCB mount)

Pak

IRF1405S

TO-262

IRF1405L

PD -93992

IRF1405S

IRF1405L

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Benefits

Typical Applications

Electric Power Steering (EPS)

Anti-lock Braking System (ABS)

Wiper Control

Climate Control

Power Door

IRF1405S/L

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.057

V/°C

Reference to 25°C, I

= 1mA

DS(on)

Static Drain-to-Source On-Resistance

4.6

5.3

= 10V, I

= 101A

GS(th)

Gate Threshold Voltage

2.0

4.0

= 10V, I

= 250µA

Forward Transconductance

= 25V, I

= 110A

µA

= 55V, V

= 0V

250

= 44V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

200

= 20V

Gate-to-Source Reverse Leakage

-200

= -20V

Total Gate Charge

170

260

= 101A

Gate-to-Source Charge

= 44V

Gate-to-Drain ("Miller") Charge

= 10V

d(on)

Turn-On Delay Time

= 38V

Rise Time

190

= 110A

d(off)

Turn-Off Delay Time

130

= 1.1

Fall Time

110

= 10V

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance

5480

= 0V

oss

Output Capacitance

1210

= 25V

rss

Reverse Transfer Capacitance

280

= 1.0MHz, See Fig. 5

oss

Output Capacitance

5210

= 0V, V

= 1.0V, = 1.0MHz

oss

Output Capacitance

900

= 0V, V

= 44V, = 1.0MHz

oss

eff.

Effective Output Capacitance

1500

= 0V, V

= 0V to 44V

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Internal Drain Inductance

Internal Source Inductance

GSS

4.5

7.5

DSS

Drain-to-Source Leakage Current

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 101A, V

= 0V

Reverse Recovery Time

130

= 25°C, I

= 101A

Reverse RecoveryCharge

250

380

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

131

680

IRF1405S/L

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1

100

20µs PULSE WIDTH
T = 175 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

V = 25V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 175 C

-60 -40 -20

20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

169A

IRF1405S/L

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

120

180

240

300

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

101A

= 27V

= 44V

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 175 C

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd

100

1000

10000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 175 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

IRF1405S/L

www.irf.com

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

90%

10%
V

d(on)

d(off)

Pulse Width

µs

Duty Factor

0.1 %

D.U.T.

10V

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

100

125

150

175

120

160

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRF1405S