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HEXFET

Power MOSFET

Description

Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET

Power MOSFET utilizes the lastest processing

techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.

DSS

= 20V

DS(on)

= 4.0m

= 180A

10/31/02

www.irf.com

Benefits

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

AUTOMOTIVE MOSFET

PD - 94591

IRF1302

TO-220AB

Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

180

@ T

= 100°C

Continuous Drain Current, V

@ 10V

130

Pulsed Drain Current

700

= 25°C

Power Dissipation

230

Linear Derating Factor

1.5

W/°C

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

350

Avalanche Current

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

TBD

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

0.65

Case-to-Sink, Flat, Greased Surface

0.50

°C/W

Junction-to-Ambient (PCB mount)

IRF1302

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.021

V/°C

Reference to 25°C, I

= 1mA

DS(on)

Static Drain-to-Source On-Resistance

3.3

4.0

= 10V, I

= 104A

GS(th)

Gate Threshold Voltage

2.0

4.0

= 10V, I

= 250µA

Forward Transconductance

= 15V, I

= 104A

µA

= 20V, V

= 0V

250

= 16V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

200

= 20V

Gate-to-Source Reverse Leakage

-200

= -20V

Total Gate Charge

120

= 104A

Gate-to-Source Charge

= 16V

Gate-to-Drain ("Miller") Charge

= 10V

d(on)

Turn-On Delay Time

= 11V

Rise Time

130

= 104A

d(off)

Turn-Off Delay Time

= 4.5

Fall Time

= 10V

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance

3600

= 0V

oss

Output Capacitance

2370

= 25V

rss

Reverse Transfer Capacitance

520

= 1.0MHz, See Fig. 5

oss

Output Capacitance

5710

= 0V, V

= 1.0V, = 1.0MHz

oss

Output Capacitance

2370

= 0V, V

= 16V, = 1.0MHz

oss

eff.

Effective Output Capacitance

3540

= 0V, V

= 0V to 16V

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Internal Drain Inductance

Internal Source Inductance

GSS

4.5

7.5

DSS

Drain-to-Source Leakage Current

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 104A, V

= 0V

Reverse Recovery Time

100

= 25°C, I

= 104A

Reverse RecoveryCharge

130

200

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

180

700

IRF1302

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60

-40

-20

100

120

140

160

180

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature

( C)

, D

r
a

i
n

-
to

-
S

r
ce

sta

(
N

l
i
z

ed)

(
on)

10V

174A

4.0

5.0

6.0

7.0

VGS, Gate-to-Source Voltage (V)

10.00

100.00

1000.00

I D

,

D

r
a

i
n

-
t
o

-
S

r
c

r
r
e

t
(

)

TJ = 25°C

TJ = 175°C

VDS = 15V
20µs PULSE WIDTH

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

I D

,

D

r
a

i
n

-
t
o

-
S

r
c

r
r
e

t

(
A

)

4.5V

20µs PULSE WIDTH
Tj = 25°C

VGS

TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

I D

,

D

r
a

i
n

-
t
o

-
S

r
c

r
r
e

t

(
A

)

4.5V

20µs PULSE WIDTH
Tj = 175°C

VGS

TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

IRF1302

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

Q , Total Gate Charge (nC)

V ,

t
e

-
t
o-

Sour

Vol

t
age (

)

104A

= 16V

0.1

100

1000

0.2

0.7

1.2

1.7

2.2

V ,Source-to-Drain Voltage (V)

I
,

e D

r
ai

n C

rrent

(A)

V = 0 V

T = 175 C

T = 25 C

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

,

C

i
t
a

(
p

)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd

100

VDS , Drain-toSource Voltage (V)

100

1000

10000

I D

,

D

r
a

i
n

-
t
o

-
S

r
c

r
r
e

t

(
A

)

Tc = 25°C
Tj = 175°C
Single Pulse

1msec

10msec

OPERATION IN THIS AREA
LIMITED BY R DS(on)

100µsec

IRF1302

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Fig 9. Maximum Drain Current Vs.

Case Temperature

90%

10%
V

d(on)

d(off)

Pulse Width

1 µs

Duty Factor

0.1 %

D.U.T.

10V

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

125

150

175

100

150

200

I
,

r
ai

n C

r
r
ent

(

)

LIMITED BY PACKAGE

, Case Temperature (°C)

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D =

t / t

2. Peak T

= P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

her

l
Res

pons

(
Z

)

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRF1302