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Part Number IR2184

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IR2184
(
4
)(S)
Typical Connection
HALF-BRIDGE DRIVER
Features
·
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
·
Gate drive supply range from 10 to 20V
·
Undervoltage lockout for both channels
·
3.3V and 5V input logic compatible
·
Matched propagation delay for both channels
·
Logic and power ground +/- 5V offset.
·
Lower di/dt gate driver for better noise immunity
·
Output source/sink current capability 1.4A/1.8A
Description
IR21844
IR2184
www.irf.com
1
Data Sheet No. PD60174-D
V
CC
V
B
V
S
HO
LO
COM
IN
SD
SD
IN
up to 600V
TO
LOAD
V
CC
IN
up to 600V
TO
LOAD
V
CC
V
B
V
S
HO
LO
COM
IN
DT
V
SS
SD
V
CC
SD
V
SS
R
DT
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
Packages
14-Lead PDIP
IR21844
8-Lead SOIC
IR2184S
14-Lead SOIC
IR21844S
8-Lead PDIP
IR2184
The IR2184(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with dependent high and low
side referenced output channels. Pro-
prietary HVIC and latch immune
CMOS technologies enable rugge-
dized monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a high
pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates up to 600 volts.
Part
Input
logic
Cross-
conduction
prevention
logic
Dead-Time
Ground Pins
Ton/Toff
2181
COM
21814
HIN/LIN
no
none
VSS/COM
180/220 ns
2183
Internal 500ns
COM
21834
HIN/LIN
yes
Program 0.4 ~ 5 us
VSS/COM
180/220 ns
2184
Internal 500ns
COM
21844
IN/SD
yes
Program 0.4 ~ 5 us
VSS/COM
680/270 ns
IR2181/IR2183/IR2184 Feature Comparison
IR2184
(
4
)
(S)
2
www.irf.com
Symbol
Definition
Min.
Max.
Units
V
B
High side floating absolute voltage
-0.3
625
V
S
High side floating supply offset voltage
V
B
- 25
V
B
+ 0.3
V
HO
High side floating output voltage
V
S
- 0.3
V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage
-0.3
25
V
LO
Low side output voltage
-0.3
V
CC
+ 0.3
DT
Programmable dead-time pin voltage (IR21844 only)
V
SS
- 0.3
V
CC
+ 0.3
V
IN
Logic input voltage (IN & SD)
V
SS
- 0.3
V
SS
+ 10
V
SS
Logic ground (IR21844 only)
V
CC
- 25
V
CC
+ 0.3
dV
S
/dt
Allowable offset supply voltage transient
--
50
V/ns
P
D
Package power dissipation @ T
A
+25°C
(8-lead PDIP)
--
1.0
(8-lead SOIC)
--
0.625
(14-lead PDIP)
--
1.6
(14-lead SOIC)
--
1.0
Rth
JA
Thermal resistance, junction to ambient
(8-lead PDIP)
--
125
(8-lead SOIC)
--
200
(14-lead PDIP)
--
75
(14-lead SOIC)
--
120
T
J
Junction temperature
--
150
T
S
Storage temperature
-50
150
T
L
Lead temperature (soldering, 10 seconds)
--
300
V
°C
°C/W
W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at 15V differential.
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: IN and SD are internally clamped with a 5.2V zener diode.
VB
High side floating supply absolute voltage
V
S
+ 10
V
S
+ 20
V
S
High side floating supply offset voltage
Note 1
600
V
HO
High side floating output voltage
V
S
V
B
V
CC
Low side and logic fixed supply voltage
10
20
V
LO
Low side output voltage
0
V
CC
V
IN
Logic input voltage (IN & SD)
V
SS
V
SS
+ 5
DT
Programmable dead-time pin voltage (IR21844 only)
V
SS
V
CC
V
SS
Logic ground (IR21844 only)
-5
5
T
A
Ambient temperature
-40
125
°C
V
Symbol
Definition
Min.
Max.
Units
IR2184
(
4
)
(S)
www.irf.com
3
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25°C, DT = VSS unless otherwise specified.
Symbol
Definition
Min. Typ.
Max. Units Test Conditions
ton
Turn-on propagation delay
--
680
900
V
S
= 0V
toff
Turn-off propagation delay
--
270
400
V
S
= 0V or 600V
tsd
Shut-down propagation delay
--
180
270
MTon
Delay matching, HS & LS turn-on
--
0
90
MToff
Delay matching, HS & LS turn-off
--
0
40
tr
Turn-on rise time
--
40
60
V
S
= 0V
tf
Turn-off fall time
--
20
35
V
S
= 0V
DT
Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
280
400
520
RDT= 0
HO turn-off to LO turn-on (DT
HO-LO)
4
5
6
µ
sec
RDT = 200k
MDT
Deadtime matching = DT
LO - HO
- DT
HO-LO
--
0
50
RDT=0
--
0
600
RDT = 200k
nsec
nsec
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: IN and SD. The V
O
, I
O
and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
IH
Logic "1" input voltage for HO & logic "0" for LO
2.7
--
--
V
CC
= 10V to 20V
V
IL
Logic "0" input voltage for HO & logic "1" for LO
--
--
0.8
V
CC
= 10V to 20V
V
SD,TH+
SD input positive going threshold
2.7
--
--
V
CC
= 10V to 20V
V
SD,TH-
SD input negative going threshold
--
--
0.8
V
CC
= 10V to 20V
V
OH
High level output voltage, V
BIAS
- V
O
--
--
1.2
I
O
= 0A
V
OL
Low level output voltage, V
O
--
--
0.1
I
O
= 0A
I
LK
Offset supply leakage current
--
--
50
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current
20
60
150
V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current
0.4
1.0
1.6
mA
V
IN
= 0V or 5V
I
IN+
Logic "1" input bias current
--
5
20
IN = 5V, SD = 0V
I
IN-
Logic "0" input bias current
--
1
2
IN = 0V, SD = 5V
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going
8.0
8.9
9.8
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
dupply undervoltage negative going
7.4
8.2
9.0
V
BSUV-
threshold
V
CCUVH
Hysteresis
0.3
0.7
--
V
BSUVH
I
O+
Output high short circuit pulsed vurrent
1.4
1.9
--
V
O
= 0V,
PW
10 µs
I
O-
Output low short circuit pulsed current
1.8
2.3
--
V
O
= 15V,
PW
10 µs
V
µA
µA
V
A
IR2184
(
4
)
(S)
4
www.irf.com
Functional Block Diagrams
2184
S D
UV
DETECT
DELAY
IN
V S
H O
V B
PULSE
FILTER
HV
LEVEL
SHIFTER
R
R
S
Q
UV
DETECT
PULSE
GENERATOR
V S S / C O M
LEVEL
SHIFT
V S S / C O M
LEVEL
SHIFT
+5V
DEADTIME
C O M
L O
V C C
2 1 8 4 4
S D
UV
D E T E C T
D E L A Y
IN
D T
V S S
V S
H O
V B
P U L S E
F I L T E R
HV
L E V E L
S H I F T E R
R
R
S
Q
UV
D E T E C T
P U L S E
G E N E R A T O R
V S S / C O M
L E V E L
S H I F T
V S S / C O M
L E V E L
S H I F T
+5V
D E A D T I M E
C O M
L O
V C C
IR2184
(
4
)
(S)
www.irf.com
5
14-Lead PDIP
14-Lead SOIC
IR21844
IR21844S
Lead Assignments
8-Lead PDIP
8-Lead SOIC
Lead Definitions
Symbol Description
IN
Logic input for high and low side gate driver outputs (HO and LO), in phase with HO (referenced to COM
for IR2184 and VSS for IR21844)
SD
Logic input for shutdown (referenced to
COM for IR2184 and VSS for IR21844)
DT
Programmable dead-time lead, referenced to VSS. (IR21
84
4 only)
VSS
Logic Ground (21
84
4 only)
V
B
High side floating supply
HO
High side gate drive output
V
S
High side floating supply return
V
CC
Low side and logic fixed supply
LO
Low side gate drive output
COM
Low side return
IR2184
IR2184S
1
2
3
4
8
7
6
5
IN
SD
COM
LO
VB
HO
VS
VCC
1
2
3
4
8
7
6
5
IN
SD
COM
LO
VB
HO
VS
VCC
1
2
3
4
5
6
7
1
4
13
12
11
10
9
8
IN
SD
VSS
DT
COM
LO
VCC
VB
HO
VS
1
2
3
4
5
6
7
1
4
13
12
11
10
9
8
IN
SD
VSS
DT
COM
LO
VCC
VB
HO
VS