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Features

Integrated 600V half-bridge gate driver

15.6V zener clamp on Vcc

True micropower start up

Tighter initial deadtime control

Low temperature coefficient deadtime

Shutdown feature (1/6th Vcc) on C

Increased undervoltage lockout Hysteresis (1V)

Lower power level-shifting circuit

Constant LO, HO pulse widths at startup

Lower di/dt gate driver for better noise immunity

Low side output in phase with R

Internal 50nsec (typ.) bootstrap diode (IR21531D)

Excellent latch immunity on all inputs and outputs

ESD protection on all leads

Also available LEAD_FREE

Preliminary Data Sheet No. PD60131-L

SELF-OSCILLATING HALF-BRIDGE DRIVER

Product Summary

OFFSET

600V max.

Duty Cycle

50%

Tr/Tp

80/40ns

clamp

15.6V

Deadtime (typ.)

0.6

µs

Typical Connections

IR21531D(S) & (PbF)

Description

The IR21531(D)(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and in-
corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage

control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at

startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

IR21531D

IR21531(S)

VCC

COM

600V

MAX

Shutdown

VCC

COM

600V

MAX

Shutdown

www.irf.com

Packages

8 Lead PDIP

8 Lead SOIC

IR21531D(S) & (PbF)

www.irf.com

Note 1:

This IC contains a zener clamp structure between the chip V

and COM which has a nominal breakdown

voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V

CLAMP

specified in the Electrical Characteristics section.

Note 2:

Care should be taken to avoid output switching conditions where the V

node flies inductively below ground by

more than 5V.

Note 3:

Enough current should be supplied to the V

pin of the IC to keep the internal 15.6V zener diode clamping the

voltage at this pin.

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions.

Symbol Definition

Min.

Max.

Units

High side floating supply voltage

- 0.7

CLAMP

Steady state high side floating supply offset voltage

-3.0 (note 2)

600

Supply voltage

CLAMP

Supply current

(note 3)

Junction temperature

-40

125

°C

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition

Min.

Max.

Units

High side floating supply voltage

-0.3

625

High side floating supply offset voltage

- 25

+ 0.3

High side floating output voltage

- 0.3

+ 0.3

Low side output voltage

-0.3

+ 0.3

pin voltage

-0.3

+ 0.3

pin voltage

-0.3

+ 0.3

Supply current (note 1)

pin current

-5

/dt

Allowable offset voltage slew rate

-50

V/ns

Maximum power dissipation @ T

+25

°C

(8 Lead DIP)

1.0

(8 Lead SOIC)

0.625

Rth

Thermal resistance, junction to ambient

(8 Lead DIP)

125

(8 Lead SOIC)

200

Junction temperature

-55

150

Storage temperature

-55

150

°C

Lead temperature (soldering, 10 seconds)

300

°C/W

IR21531D(S) & (PbF)

www.irf.com

Floating Supply Characteristics

Electrical Characteristics

BIAS

, V

) = 12V, C

= 1000 pF, C

= 1 nF and T

= 25

°C unless otherwise specified. The V

, V

and I

parameters are referenced to COM. The V

and I

parameters are referenced to COM and are applicable to the

respective output leads: HO or LO.

Symbol Definition

Min. Typ. Max. Units Test Conditions

CCUV+

Rising V

undervoltage lockout threshold

8.1

9.0 9.9

CCUV-

Falling V

undervoltage lockout threshold

7.2

8.0 8.8

CCUVH

undervoltage lockout Hysteresis

0.5

1.0

1.5

QCCUV

Micropower startup V

supply current

150

CCUV

QCC

Quiescent V

supply current

500 950

CLAMP

zener clamp voltage

14.4

15.6 16.8

= 5mA

Low Voltage Supply Characteristics

Symbol Definition

Min.

Typ.

Max. Units Test Conditions

fosc

Oscillator frequency

19.4

20.6

= 36.9k

100

106

= 7.43k

d R

pin duty cycle

fo < 100kHz

pin current

0.001

1.0

CTUV

UV-mode C

pin pulldown current

0.30

0.70

1.2

= 7V

CT+

Upper C

ramp voltage threshold

8.0

CT-

Lower C

ramp voltage threshold

4.0

CTSD

voltage shutdown threshold

1.8

2.1

2.4

RT+

High-level R

output voltage, V

- V

= 100

100

300

= 1mA

RT-

Low-level R

output voltage

= 100

100

300

= 1mA

RTUV

UV-mode R

output voltage

100

CCUV

RTSD

SD-Mode R

output voltage, V

- V

= 100

= 0V

300

= 1mA,

= 0V

Oscillator I/O Characteristics

Symbol Definition

Min.

Typ.

Max. Units Test Conditions

QBSUV

Micropower startup V

supply current

CCUV

QBS

Quiescent VBS supply current

-- 30

BSMIN

Minimum required V

voltage for proper

-- 4.0 5.0

V V

CCUV+

+ 0.1V

functionality from R

to HO

Offset supply leakage current

= V

= 600V

Bootstrap diode forward voltage (IR21531D)

0.5

1.0

= 250mA

kHz

IR21531D(S) & (PbF)

www.irf.com

Lead Assignments

8 Lead DIP

8 Lead SOIC

IR21531(D)

IR21531S

NOTE: The IR21531D is offered in 8 lead DIP only.

Symbol

Description

Logic and internal gate drive supply voltage

Oscillator timing resistor input

Oscillator timing capacitor input

COM

IC power and signal ground

Low side gate driver output

High voltage floating supply return

High side gate driver output

High side gate driver floating supply

Lead Definitions

Symbol Definition

Min.

Typ.

Max. Units Test Conditions

High level output voltage, V

BIAS

-V

100

= OA

VOL

Low-level output voltage, VO

100

= OA

VOL_UV UV-mode output voltage, VO

100

= OA

CCUV

Output rise time

150

Output fall time

100

tsd

Shutdown propogation delay

660

Output deadtime (HO or LO)

0.35

0.60

0.85

sec

Gate Driver Output Characteristics

nsec

Electrical Characteristics (cont.)

IR21531D(S) & (PbF)

www.irf.com

Functional Block Diagram for IR21531(S)

Functional Block Diagram for IR21531D

PULSE

GEN

DELAY

LEVEL

SHIFT

PULSE

FILTER

DEAD

TIME

COM

R
S

15.6V

DETECT

DEAD
TIME

LOGIC

R/2

NOTE: The D1 is a separate die.

PULSE

GEN

DELAY

LEVEL

SHIFT

PULSE

FILTER

DEAD

TIME

COM

R
S

15.6V

DETECT

DEAD
TIME

LOGIC

R/2

IR21531D(S) & (PbF)

www.irf.com

LEADFREE PART MARKING INFORMATION

ORDER INFORMATION

Lead Free Released
Non-Lead Free
Released

Part number

Date code

IRxxxxxx

YWW?

?XXXX

Pin 1
Identifier

IR logo

Lot Code

(Prod mode - 4 digit SPN code)

Assembly site code
Per SCOP 200-002

MARKING CODE

Basic Part (Non-Lead Free)
8-Lead PDIP IR21531D order IR21531D
8-Lead SOIC IR21531S order IR21531S

Leadfree Part
8-Lead PDIP IR21531D order IR21531DPbF
8-Lead SOIC IR21531S order IR21531SPbF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105

This product has been qualified per industrial level

Data and specifications subject to change without notice. 4/2/2004

Part Number IR21531