Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout
n
CMOS Schmitt-triggered inputs with pull-down
n
Output out of phase with input
Description
The IR2118 is a high voltage, high speed power
MOSFET and IGBT driver. Proprietary HVIC and
latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS outputs. The out-
put driver features a high pulse current buffer stage
designed for minimum cross-conduction. The float-
ing channel can be used to drive an N-channel power
MOSFET or IGBT in the high or low side configura-
tion which operates up to 600 volts.
Data Sheet No. PD-6.041C
IR2118
SINGLE CHANNEL DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/-
200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.)
125 & 105 ns
Packages
Typical Connection
V
CC
V
B
V
S
HO
IN
COM
up to 600V
V
CC
IN
TO
LOAD
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-83
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IR2118
B-84 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
Parameter
Value
Symbol
Definition
Min.
Max.
Units
V
B
High Side Floating Supply Voltage
-0.3
625
V
S
High Side Floating Supply Offset Voltage
V
B
- 25
V
B
+ 0.3
V
HO
High Side Floating Output Voltage
V
S
- 0.3
V
B
+ 0.3
V
V
CC
Logic Supply Voltage -0.3
25
V
IN
Logic Input Voltage
-0.3
V
CC
+ 0.3
dV
s
/dt
Allowable Offset Supply Voltage Transient (Figure 2)
--
50
V/ns
P
D
Package Power Dissipation @ T
A
+25°C
(8 Lead DIP)
--
1.0
(8 Lead SOIC)
--
0.625
R
JA
Thermal Resistance, Junction to Ambient
(8 Lead DIP)
--
125
(8 Lead SOIC)
--
200
T
J
Junction Temperature
--
150
T
S
Storage Temperature
-55
150
°C
T
L
Lead Temperature (Soldering, 10 seconds)
--
300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
Parameter
Value
Symbol
Definition
Min.
Max.
Units
V
B
High Side Floating Supply Absolute Voltage
V
S
+ 10
V
S
+ 20
V
S
High Side Floating Supply Offset Voltage
Note 1
600
V
HO
High Side Floating Output Voltage
V
S
V
B
V
V
CC
Logic Supply Voltage
10
20
V
IN
Logic Input Voltage
0
V
CC
T
A
Ambient Temperature
-40
125
°C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
.
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
W
°C/W
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IR2118
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-85
Parameter
Value
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
t
on
Turn-On Propagation Delay
--
125
200
V
S
= 0V
t
off
Turn-Off Propagation Delay
--
105
180
V
S
= 600V
t
r
Turn-On Rise Time
--
80
130
t
f
Turn-Off Fall Time
--
40
65
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
Parameter
Value
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
IH
Logic "0" Input Voltage
6.4
--
--
V
CC
= 10V
9.5
--
--
V
CC
= 15V
12.6
--
--
V
CC
= 20V
V
IL
Logic "1" Input Voltage
--
--
3.8
V
CC
= 10V
--
--
6.0
V
CC
= 15V
--
--
8.3
V
CC
= 20V
V
OH
High Level Output Voltage, V
BIAS
- V
O
--
--
100
I
O
= 0A
V
OL
Low Level Output Voltage, V
O
--
--
100
I
O
= 0A
I
LK
Offset Supply Leakage Current
--
--
50
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
Supply Current
--
50
240
V
IN
= 0V or V
CC
I
QCC
Quiescent V
CC
Supply Current
--
70
340
µA
V
IN
= 0V or V
CC
I
IN+
Logic "1" Input Bias Current
--
--
1.0
V
IN
= 0V
I
IN-
Logic "0" Input Bias Current
--
20
40
V
IN
= 15V
V
BSUV+
V
BS
Supply Undervoltage Positive Going Threshold
7.6
8.6
9.6
V
BSUV-
V
BS
Supply Undervoltage Negative Going Threshold
7.2
8.2
9.2
V
CCUV+
V
CC
Supply Undervoltage Positive Going Threshold
7.6
8.6
9.6
V
CCUV-
V
CC
Supply Undervoltage Negative Going Threshold
7.2
8.2
9.2
I
O+
Output High Short Circuit Pulsed Current
200
250
--
V
O
= 0V, V
IN
= 0V
PW
10 µs
I
O-
Output Low Short Circuit Pulsed Current
420
500
--
V
O
= 15V, V
IN
= V
CC
PW
10 µs
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
V
mV
mA
V
ns
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IR2118
B-86 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
Lead Definitions
Lead
Symbol
Description
V
CC
Logic and gate drive supply
Logic input for gate driver output (HO), out of phase with HO
COM
Low side return
V
B
High side floating supply
HO
High side gate drive output
V
S
High side floating supply return
Functional Block Diagram
8 Lead DIP
SO-8
IR2118
IR2118S
Part Number
Lead Assignments
IN
PULSE
GEN
IN
UV
DETECT
HO
V
S
V
B
Q
S
R
R
PULSE
FILTER
HV
LEVEL
SHIFT
UV
DETECT
V
CC
COM
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IR2118
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-87
Thickness of Gate Oxide
800
Å
Connections
Material
Poly Silicon
First
Width
4 µm
Layer
Spacing
6 µm
Thickness
5000Å
Material
Al - Si (Si: 1.0% ±0.1%)
Second
Width
6 µm
Layer
Spacing
9 µm
Thickness
20,000Å
Contact Hole Dimension
8 µm X 8 µm
Insulation Layer
Material
PSG (SiO
2
)
Thickness
1.5 µm
Passivation
Material
PSG (SiO
2
)
Thickness
1.5 µm
Method of Saw
Full Cut
Method of Die Bond
Ablebond 84 - 1
Wire Bond
Method
Thermo Sonic
Material
Au (1.0 mil / 1.3 mil)
Leadframe
Material
Cu
Die Area
Ag
Lead Plating
Pb : Sn (37 : 63)
Package
Types
8 Lead PDIP / SO-8
Materials
EME6300 / MP150 / MP190
Remarks:
Device Information
Process & Design Rule
HVDCMOS 4.0 µm
Transistor Count
114
Die Size
70 X 77 X 26 (mil)
Die Outline
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