Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Data Sheet No. PD-6.074
IR2110L6
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.)
120 & 94 ns
Delay Matching
10 ns
Description
The IR2110L6 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs. The
output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propa-
gation delays are matched to simplify use in high fre-
quency applications. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Parameter
Min.
Max.
Units
V
B
High Side Floating Supply Voltage
-0.5
V
S
+ 20
V
S
High Side Floating Supply Offset Voltage
--
600
V
HO
High Side Floating Output Voltage
V
S
- 0.5
V
B
+ 0.5
V
CC
Low Side Fixed Supply Voltage
-0.5
20
V
LO
Low Side Output Voltage
-0.5
V
CC
+ 0.5
V
V
DD
Logic Supply Voltage
-0.5
V
SS
+ 20
V
SS
Logic Supply Offset Voltage
V
CC
- 20
V
CC
+ 0.5
V
IN
Logic Input Voltage (HIN, LIN & SD)
V
SS
- 0.5
V
DD
+ 0.5
dV
s
/dt
Allowable Offset Supply Voltage Transient (Figure 2)
--
50
V/ns
P
D
Package Power Dissipation @ T
A
+25°C
--
1.6
W
R
JA
Thermal Resistance, Junction to Ambient
--
75
°C/W
T
J
Junction Temperature
-55
125
T
S
Storage Temperature
-55
150
°C
T
L
Lead Temperature (Soldering, 10 seconds)
--
300
Weight
1.5 (typical)
g
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute volt-
ages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
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IR2110L6
Tj = 25°C
Tj =
-55 to 125°C
Parameter
Min.
Typ.
Max.
Min.
Max.
Units
Test Conditions
t
on
Turn-On Propagation Delay
--
120
150
--
260
V
S
= 0V
t
off
Turn-Off Propagation Delay
--
94
125
--
220
V
S
= 600V
t
sd
Shutdown Propagation Delay
--
110
140
--
235
V
S
= 600V
t
r
Turn-On Rise Time
--
25
35
--
50
CL = 1000pf
t
f
Turn-Off Fall Time
--
17
25
--
40
CL = 1000pf
MT
Delay Matching, HS & LS Turn-On/Off
--
--
10
--
--
|
Ht
on
- Lt
on
| /
|
Ht
off
- Lt
off
|
ns
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, and V
SS
= COM unless otherwise specified. The dynamic electrical characteristics are
measured using the test circuit shown in Figure 3.
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in Figures 36 and 37.
Parameter
Min.
Max.
Units
VB
High Side Floating Supply Absolute Voltage
VS + 10
VS + 20
VS
High Side Floating Supply Offset Voltage
-4
600
VHO
High Side Floating Output Voltage
VS
VB
VCC
Low Side Fixed Supply Voltage
10
20
V
VLO
Low Side Output Voltage
0
VCC
VDD
Logic Supply Voltage
VSS + 5
VSS + 20
VSS
Logic Supply Offset Voltage
-5
5
VIN
Logic Input Voltage (HIN, LIN & SD)
VSS
VDD
Typical Connection
HIN
up to 500V
TO
LOAD
V
DD
V
B
V
S
HO
LO
COM
HIN
LIN
V
SS
SD
V
CC
LIN
V
DD
SD
V
SS
V
CC
600V
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IR2110L6
Tj = 25°C
Tj =
-55 to 125°C
Parameter
Min.
Typ.
Max.
Min.
Max.
Units
Test Conditions
V
IH
Logic "1" Input Voltage
3.1
--
--
3.3
--
VDD = 5V
6.4
--
--
6.8
--
VDD = 10V
9.5
--
--
10
--
V
VDD = 15V
12.5
--
--
13.3
--
VDD = 20V
V
IL
Logic "0" Input Voltage
--
--
1.8
--
1.7
VDD = 5V
--
--
3.8
--
3.6
VDD = 10V
--
--
6
--
5.7
V
VDD = 15V
--
--
8.3
--
7.9
VDD = 20V
V
OH
High Level Output Voltage, V
BIAS
- V
O
--
0.7
1.2
--
1.5
V
IN
=V
IH,
I
O
= 0A
V
OL
Low Level Output Voltage, V
O
--
--
0.1
--
0.1
V
IN
=V
IH,
I
O
= 0A
I
LK
Offset Supply Leakage Current
--
--
50
--
250
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
Supply Current
--
125
230
--
500
µA
V
IN
=0V
or V
DD
I
QCC
Quiescent V
CC
Supply Current
--
180
340
--
600
V
IN
=0V
,
or V
DD
I
QDD
Quiescent V
DD
Supply Current
--
5
30
--
60
V
IN
=0V
,
or V
DD
I
IN+
Logic "1" Input Bias Current
--
15
40
--
70
V
IN
= V
DD
I
IN-
Logic "0" Input Bias Current
--
--
1.0
--
10
V
IN
= 0V
V
BSUV+
V
BS
Supply Undervoltage Positive
7.5
8.6
9.7
--
--
Going Threshold
V
BSUV-
V
BS
Supply Undervoltage Negative
7.0
8.2
9.4
--
--
Going Threshold
V
CCUV+
V
CC
Supply Undervoltage Positive
7.4
8.5
9.6
--
--
V
Going Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative
7.0
8.2
9.4
--
--
Going Threshold
I
O+
Output High Short Circuit Pulsed
2.0
--
--
--
--
V
O
= 0V, V
IN
= V
DD
Current
A
PW
10 µs
I
O-
Output Low Short Circuit Pulsed
2.0
--
--
--
--
V
O
= 15V, V
IN
= 0V
Current
PW
10 µs
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to V
SS
and are
applicable to all three logic input pins: HIN, LIN and SD. The V
O
and I
O
parameters are referenced to COM or VS and are
applicable to the respective output pins: HO or LO.
To Order
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IR2110L6
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definition
Figure 6. Delay Matching Waveform Definitions
Figure 5. Shutdown Waveform Definitions
SD
tsd
HO
LO
50%
90%
HIN
LIN
tr
ton
tf
toff
HO
LO
50%
50%
90%
90%
10%
10%
HIN
LIN
HO
50%
50%
10%
LO
90%
MT
HO
LO
MT
HV = 10 to 600V
(0 to 600V)
To Order
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IR2110L6
Figure 9B. Shutdown Time vs. Voltage
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
Figure 9A. Shutdown Time vs. Temperature
0
50
100
150
200
250
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Turn-On Delay Time (n
s)
Max.
Typ.
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
Temperature (°C)
T
urn-On Delay Time (n
s)
Max.
Typ.
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
Temperature (°C)
Turn-Off Delay Time (n
s)
Max.
Typ.
0
50
100
150
200
250
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
T
urn-Off Delay Time (n
s)
Max.
Typ.
0
50
100
150
200
250
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
S
hutdown Delay time (n
s)
Max.
Typ.
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
Temperature (°C)
S
hutdown Delay Time (n
s)
Max.
Typ.
To Order
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