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Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Data Sheet No. PD-6.065
IR2110E6
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/-
2A / 2A
V
OUT
10 - 20V
t
on/off
(typ.)
120 & 94 ns
Delay Matching
10 ns
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute
voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions. Additional information is shown in Figures 28 through 35.
Description
The IR2110E6 is a high voltage, high speed
power MOSFET and IGBT driver with independent
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technolo-
gies enable ruggedized monolithic construction.
Logic inputs are compatible with standard CMOS or
LSTTL outputs. The output drivers feature a high
pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applica-
tions. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600 volts.
Symbol
Parameter
Min.
Max.
Units
V
B
High Side Floating Supply Absolute Voltage
-0.5
V
S
+ 20
V
S
High Side Floating Supply Offset Voltage
--
600
V
HO
High Side Output Voltage
V
S
-0.5
V
B
+ 0.5
V
CC
Low Side Fixed Supply Voltage
-0.5
20
V
LO
Low Side Output Voltage
-0.5
V
CC
+ 0.5
V
DD
Logic Supply Voltage
-0.5
V
SS
+ 20
V
SS
Logic Supply Offset Voltage
V
CC
- 20
V
CC
+ 0.5
V
IN
Logic Input Voltage (HIN, LIN & SD)
V
SS
- 0.5
V
DD
+ 0.5
dV
S
/dt
Allowable Offset Supply Voltage Transient (Fig. 16)
--
50
V/ns
P
D
Package Power Dissipation @ T
A
= 25°C (Fig. 19)
--
1.6
W
R
thJA
Thermal Resistance, Junction to Ambient
--
75
°C/W
T
j
Junction Temperature
-55
125
T
S
Storage Temperature
-55
150
T
L
Package Mounting Surface Temperature
300 (for 5 seconds)
Weight
0.45 (typical)
g
V
°C
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IR2110E6
Typical Connection
HIN
up to 500V
TO
LOAD
V
DD
V
B
V
S
HO
LO
COM
HIN
LIN
V
SS
SD
V
CC
LIN
V
DD
SD
V
SS
V
CC
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in Figures 36 and 37.
Symbol
Parameter
Min.
Max.
Units
VB
High Side Floating Supply Absolute Voltage
VS + 10
VS + 20
VS
High Side Floating Supply Offset Voltage
-4
600
VHO
High Side Output Voltage
VS
VB
VCC
Low Side Fixed Supply Voltage
10
20
VLO
Low Side Output Voltage
0
VCC
VDD
Logic Supply Voltage
VSS + 5
VSS + 20
VSS
Logic Supply Offset Voltage
-5
5
VIN
Logic Input Voltage (HIN, LIN & SD)
VSS
VDD
V
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, and V
SS
= COM unless otherwise specified. The dynamic electrical
characteristics are measured using the test circuit shown in Figure 3.
Symbol Parameter
Min
Typ. Max. Min. Max
Units
Test Conditions
t
on
Turn-On Propagation Delay
--
120
150
--
260
V
S
= 0V
t
off
Turn-Off Propagation Delay
--
94
125
--
220
V
S
= 600V
t
sd
Shutdown Propagation Delay
--
110
140
--
235
V
S
= 600V
t
r
Turn-On Rise Time
--
25
35
--
50
C
L
= 1000pf
t
f
Turn-Off Fall Time
--
17
25
--
40
C
L
= 1000pf
Mt
Delay Matching, HS & LS Turn-On/Off
--
--
10
--
--
Tj = 25°C
Tj = -55 to
125°C
ns
up to 600V
Ht
on
-Lt
on
/
Ht
off
-Lt
off
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IR2110E6
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V,
unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to V
SS
and
are applicable to all three logic input leads: HIN, LIN and SD. The V
O
and I
O
parameters are referenced to COM and are
applicable to the respective output leads: HO or LO.
Symbol Parameter
Min
Typ. Max. Min. Max Units
Test Conditions
V
IH
Logic "1" Input Voltage
3.1
--
--
3.3
--
V
DD
= 5V
6.4
--
--
6.8
--
V
DD
= 10V
9.5
--
--
10
--
V
DD
= 15V
12.6
--
--
13.3
--
V
V
DD
= 20V
V
IL
Logic "0" Input Voltage
--
--
1.8
--
1.7
V
DD
= 5V
--
--
3.8
--
3.6
V
DD
= 10V
--
--
6
--
5.7
W
V
DD
= 15V
--
--
8.3
--
7.9
V
V
DD
= 20
V
OH
High Level Output Voltage, V
BIAS
- V
O
--
0.7
1.2
--
1.5
V
IN
= V
IH
, I
O
= 0A
V
OL
Low Level Output Voltage, VO
--
--
0.1
--
0.1
V
IN
= V
IL
, I
O
= 0A
I
LK
Offset Supply Leakage Current
--
--
50
--
250
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
Supply Current
--
125
230
--
500
V
IN
= 0V or V
DD
I
QCC
Quiescent V
CC
Supply Current
--
180
340
--
600
V
IN
= 0V or V
DD
I
QDD
Quiescent V
DD
Supply Current
--
5
30
--
60
V
IN
= 0V or V
DD
I
IN+
Logic "1" Input Bias Current
--
15
40
--
70
V
IN
= V
DD
I
IN-
Logic "0" Input Bias Current
--
--
1
--
10
V
IN
= 0V
V
BSUV+
V
BS
Supply Undervoltage Positive
7.5
8.6
9.7
--
--
Going Threshold
V
BSUV-
V
BS
Supply Undervoltage Negative
7.0
8.2
9.4
--
--
Going Threshold
V
CCUV+
V
CC
Supply Undervoltage Positive
7.4
8.5
9.6
--
--
Going Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative
7.0
8.2
9.4
--
--
Going Threshold
I
O+
Output High Short Circuit Pulsed
2
--
--
--
--
V
OUT
= 0V, V
IN
= V
DD
Current
PW < = 10
I
O-
Output Low Short Circuit Pulsed
2
--
--
--
--
V
OUT
= 15V, V
IN
= 0V
Current
PW < = 10
Tj = 25°C
Tj = -55 to
125°C
V
V
A
µ
A
µ
s
µ
s
V
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IR2110E6
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definition
Figure 6. Delay Matching Waveform Definitions
Figure 5. Shutdown Waveform Definitions
SD
tsd
HO
LO
50%
90%
HIN
LIN
tr
ton
tf
toff
HO
LO
50%
50%
90%
90%
10%
10%
HIN
LIN
HO
50%
50%
10%
LO
90%
MT
HO
LO
MT
10 to 600V
(0 to 600V)
To Order
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IR2110E6
Figure 9B. Shutdown Time vs. Voltage
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
Figure 9A. Shutdown Time vs. Temperature
0
50
100
150
200
250
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Turn-On Delay Tim
e (
Max.
Typ.
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
Temperature (°C)
T
urn-On Delay Tim
e (
Max.
Typ.
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
Temperature (°C)
Turn-Off Delay Tim
e (
Max.
Typ.
0
50
100
150
200
250
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
T
urn-Off Delay Tim
e (
Max.
Typ.
0
50
100
150
200
250
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
S
hutdown Delay ti
me
Max.
Typ.
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
Temperature (°C)
S
hutdown Delay Tim
e
Max.
Typ.
To Order
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