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Typical Connection
HALF-BRIDGE DRIVER
Features
·
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
·
Gate drive supply range from 10 to 20V
·
Undervoltage lockout for both channels
·
3.3V, 5V and 15V input logic compatible
·
Cross-conduction prevention logic
·
Matched propagation delay for both channels
·
High side output in phase with IN input
·
Logic and power ground +/- 5V offset.
·
Internal 540ns dead-time, and programmable
up to 5us with one external R
DT
resistor (IR21094)
·
Lower di/dt gate driver for better noise immunity
·
Shut down input turns off both channels.
Description
The IR2109(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
IR21094
IR2109
Packages
IR2109(4)
(S)
Data Sheet No. PD60163-P
V
OFFSET
600V max.
I
O
+/-
120 mA / 250 mA
V
OUT
10 - 20V
t
on/off
(typ.)
750 & 200 ns
Dead Time
540 ns
(programmable up to 5uS for IR21094)
Product Summary
www.irf.com
1
V
CC
V
B
V
S
HO
LO
COM
IN
SD
SD
IN
up to 600V
TO
LOAD
V
CC
IN
up to 600V
TO
LOAD
V
CC
V
B
V
S
HO
LO
COM
IN
DT
V
SS
SD
V
CC
SD
V
SS
R
DT
8 Lead PDIP
14 Lead PDIP
8 Lead SOIC
14 Lead SOIC
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
IR2109(4) (
S
)
2
www.irf.com
Symbol
Definition
Min.
Max.
Units
V
B
High side floating absolute voltage
-0.3
625
V
S
High side floating supply offset voltage
V
B
- 25
V
B
+ 0.3
V
HO
High side floating output voltage
V
S
- 0.3
V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage
-0.3
25
V
LO
Low side output voltage
-0.3
V
CC
+ 0.3
DT
Programmable dead-time pin voltage (IR21094 only)
V
SS
- 0.3
V
CC
+ 0.3
V
IN
Logic input voltage (IN & SD)
V
SS
- 0.3
V
CC
+ 0.3
V
SS
Logic ground (IR21094/IR21894 only)
V
CC
- 25
V
CC
+ 0.3
dV
S
/dt
Allowable offset supply voltage transient
--
50
V/ns
P
D
Package power dissipation @ T
A
+25°C
(8 Lead PDIP)
--
1.0
(8 Lead SOIC)
--
0.625
(14 lead PDIP)
--
1.6
(14 lead SOIC)
--
1.0
Rth
JA
Thermal resistance, junction to ambient
(8 Lead PDIP)
--
125
(8 Lead SOIC)
--
200
(14 lead PDIP)
--
75
(14 lead SOIC)
--
120
T
J
Junction temperature
--
150
T
S
Storage temperature
-50
150
T
L
Lead temperature (soldering, 10 seconds)
--
300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
V
°C
°C/W
W
IR2109(4) (
S
)
www.irf.com
3
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25°C, DT = VSS unless otherwise specified.
Symbol
Definition
Min. Typ.
Max. Units Test Conditions
ton
Turn-on propagation delay
--
750
950
V
S
= 0V
toff
Turn-off propagation delay
--
200
280
V
S
= 0V or 600V
tsd
Shut-down propagation delay
--
200
280
MT
Delay matching, HS & LS turn-on/off
--
0
70
tr
Turn-on rise time
--
150
220
V
S
= 0V
tf
Turn-off fall time
--
50
80
V
S
= 0V
DT
Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
400
540
680
RDT= 0
HO turn-off to LO turn-on (DT
HO-LO)
4
5
6
usec RDT = 200k
(IR21094)
MDT
Deadtime matching = DT
LO - HO
- DT
HO-LO
--
0
60
RDT=0
--
0
600
RDT = 200k
(IR21094)
nsec
nsec
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
VB
High side floating supply absolute voltage
V
S
+ 10
V
S
+ 20
V
S
High side floating supply offset voltage
Note 1
600
V
HO
High side floating output voltage
V
S
V
B
V
CC
Low side and logic fixed supply voltage
10
20
V
LO
Low side output voltage
0
V
CC
V
IN
Logic input voltage (IN & SD)
V
SS
V
CC
DT
Programmable dead-time pin voltage (IR21094 only)
V
SS
V
CC
V
SS
Logic ground (IR21094 only)
-5
5
T
A
Ambient temperature
-40
125
°
C
Symbol
Definition
Min.
Max.
Units
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at 15V differential.
V
IR2109(4) (
S
)
4
www.irf.com
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: IN and SD. The V
O
, I
O
and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
IH
Logic "1" input voltage for HO & logic "0" for LO
2.9
--
--
V
CC
= 10V to 20V
V
IL
Logic "0" input voltage for HO & logic "1" for LO
--
--
0.8
V
CC
= 10V to 20V
V
SD,TH+
SD input positive going threshold
2.9
--
--
V
CC
= 10V to 20V
V
SD,TH-
SD input negative going threshold
--
--
0.8
V
CC
= 10V to 20V
V
OH
High level output voltage, V
BIAS
- V
O
--
0.8
1.4
I
O
= 20 mA
V
OL
Low level output voltage, V
O
--
0.3
0.6
I
O
= 20 mA
I
LK
Offset supply leakage current
--
--
50
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current
20
60
150
V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current
0.4
1.0
1.6
mA
V
IN
= 0V or 5V
RDT = 0
I
IN+
Logic "1" input bias current
--
5
20
IN = 5V, SD = 0V
I
IN-
Logic "0" input bias current
--
1
2
IN = 0V, SD = 5V
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going
8.0
8.9
9.8
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage negative going
7.4
8.2
9.0
V
BSUV-
threshold
V
CCUVH
Hysteresis
0.3
0.7
--
V
BSUVH
I
O+
Output high short circuit pulsed vurrent
120
200
--
V
O
= 0V, PW
10 µs
I
O-
Output low short circuit pulsed current
250
350
--
V
O
= 15V,PW
10 µs
V
µA
V
µA
mA
IR2109(4) (
S
)
www.irf.com
5
Functional Block Diagrams
IR2109
SD
UV
DETECT
DELAY
COM
LO
VCC
IN
VS
HO
VB
PULSE
FILTER
HV
LEVEL
SHIFTER
R
R
S
Q
UV
DETECT
PULSE
GENERATOR
VSS/COM
LEVEL
SHIFT
VSS/COM
LEVEL
SHIFT
+5V
DEADTIME
S D
UV
DETECT
DELAY
C O M
L O
V C C
I N
D T
V S S
V S
H O
V B
PULSE
FILTER
HV
LEVEL
SHIFTER
R
R
S
Q
UV
DETECT
PULSE
GENERATOR
VSS/COM
LEVEL
SHIFT
VSS/COM
LEVEL
SHIFT
+ 5 V
DEADTIME
IR21094
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