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Parameter
Max
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 100°C
Continuous Forward Current
8.0
I
FSM
Single Pulse Forward Current
60
I
FRM
Maximum Repetitive Forward Current
24
P
D
@ T
C
= 25°C
Maximum Power Dissipation
36
P
D
@ T
C
= 100°C
Maximum Power Dissipation
14
T
J
Operating Junction and
T
STG
Storage Temperature Range
Bulletin PD -2.341 rev. A 11/00
· Ultrafast Recovery
· Ultrasoft Recovery
· Very Low
I
RRM
· Very Low
Q
rr
· Specified at Operating Conditions
Benefits
· Reduced RFI and EMI
· Reduced Power Loss in Diode and Switching
Transistor
· Higher Frequency Operation
· Reduced Snubbing
· Reduced Parts Count
Features
Description
International Rectifier's HFA08TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (I
RRM
) and does not exhibit any
tendency to "snap-off" during the t
b
portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA08TB60
Absolute Maximum Ratings
- 55 to +150
W
A
C
4/8/97
V
R
= 600V
V
F
(typ.)* = 1.4V
I
F(AV)
= 8.0A
Q
rr
(typ.)= 65nC
I
RRM
= 5.0A
t
rr
(typ.)
= 18ns
di
(rec)M
/dt (typ.) = 240A/µs
*
125°C
TO-220AC
1
1
BASE
CATHODE
2
3
CATHODE
ANODE
2
4
2
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
Parameter
Min
Typ
Max
Units
T
lead
!
Lead Temperature
300
°C
R
th
JC
Thermal Resistance, Junction to Case
3.5
R
th
JA
"
Thermal Resistance, Junction to Ambient
80
R
th
CS
#
Thermal Resistance, Case to Heat Sink
0.5
2.0
g
0.07
(oz)
6.0
12
Kg-cm
5.0
10
lbf·in
Parameter
Min Typ Max Units Test Conditions
t
rr
Reverse Recovery Time
18
I
F
= 1.0A, di
f
/dt = 200A/µs, V
R
= 30V
t
rr1
37
55
ns
T
J
= 25°C
t
rr2
55
90
T
J
= 125°C
I
F
= 8.0A
I
RRM1
Peak Recovery Current
3.5
5.0
T
J
= 25°C
I
RRM2
4.5
8.0
T
J
= 125°C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
65
138
T
J
= 25°C
Q
rr2
124
360
T
J
= 125°C
di
f
/dt = 200A/µs
di
(rec)M
/dt1 Peak Rate of Fall of Recovery Current
240
T
J
= 25°C
di
(rec)M
/dt2 During t
b
210
T
J
= 125°C
Parameter
Min Typ Max Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100µA
1.4
1.7
I
F
= 8.0A
1.7
2.1
V
I
F
= 16A
1.4
1.7
I
F
= 8.0A, T
J
= 125°C
0.3
5.0
V
R
= V
R
Rated
100
500
T
J
= 125°C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
10
25
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
A/µs
nC
A
L
S
Series Inductance
8.0
nH
See Fig. 3
See Fig. 2
See Fig. 1
Thermal - Mechanical Characteristics
See Fig. 5, 6 & 16
See Fig. 7& 8
See Fig. 9 & 10
See Fig. 11 & 12
K/W
V
FM
Max Forward Voltage
µA
Max Reverse Leakage Current
I
RM
Wt
Weight
Mounting Torque
!
0.063 in. from Case (1.6mm) for 10 sec
"
Typical Socket Mount
#
Mounting Surface, Flat, Smooth and Greased
3
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
0.1
1
10
100
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
FM
T = 150°C
T = 125°C
T = 25°C
J
J
J
Forward Voltage Drop - V (V)
0.001
0.01
0.1
1
10
100
1000
0
100
200
300
400
500
600
R
T = 150°C
T = 125°C
T = 25°C
J
J
J
Reverse Voltage - V (V)
1
10
100
1
10
100
1000
T = 25°C
J
Reverse Voltage - V (V)
R
A
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
(µA)
Junction Capacitance -C
T
(pF)
4
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt
Fig. 6 - Typical Recovery Current vs. di
f
/dt
0
20
40
60
80
100
1000
f
di /dt - (A/µs)
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
F
0
5
10
15
20
100
1000
f
di /dt - (A/µs)
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
F
0
100
200
300
400
500
100
1000
f
di /dt - (A/µs)
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
F
100
1000
10000
100
1000
f
di /dt - (A/µs)
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
F
trr-
(nC)
Irr-
(
A)
di (rec) M/dt-
(A /µs)
Qrr-
(nC)
5
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
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