Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
57
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
36
A
I
DM
Pulsed Drain Current
228
P
D
@T
C
= 25°C
Power Dissipation
625
W
Linear Derating Factor
5.0
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
725
mJ
I
AR
Avalanche Current
57
A
E
AR
Repetitive Avalanche Energy
62.5
mJ
dv/dt
Peak Diode Recovery dv/dt
3.0
V/ns
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
V
ISO
Insulation Withstand Voltage (AC-RMS)
2.5
kV
Mounting torque, M4 srew
1.3
N·m
FA57SA50LC
HEXFET
®
Power MOSFET
PD - 91650A
S
D
G
V
DSS
= 500V
R
DS(on)
= 0.08
I
D
= 57A
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
2/1/99
Description
l
Fully Isolated Package
l
Easy to Use and Parallel
l
Low On-Resistance
l
Dynamic dv/dt Rating
l
Fully Avalanche Rated
l
Simple Drive Requirements
l
Low Gate Charge Device
l
Low Drain to Case Capacitance
l
Low Internal Inductance
S O T -2 2 7
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.20
R
CS
Case-to-Sink, Flat, Greased Surface
0.05
°C/W
Thermal Resistance
www.irf.com
1
FA57SA50LC
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
V
V
GS
= 0V, I
D
= 1.0mA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.62
V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.08
V
GS
= 10V, I
D
= 34A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
43
S
V
DS
= 50V, I
D
= 34A
50
µ A
V
DS
= 500V, V
GS
= 0V
500
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
n A
V
GS
= -20V
Q
g
Total Gate Charge
225
338
I
D
= 57A
Q
gs
Gate-to-Source Charge
51
77
nC
V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge
98
147
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
32
V
DD
= 250V
t
r
Rise Time
152
I
D
= 57A
t
d(off)
Turn-Off Delay Time
108
R
G
=2.0
(Internal)
t
f
Fall Time
118
R
D
= 4.3
,
See Fig. 10
L
s
Internal Source Inductance
5.0
nH
Between lead,
and center of die contact
C
iss
Input Capacitance
10000
V
GS
= 0V
C
oss
Output Capacitance
1500
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
50
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
57A, di/dt
200A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Notes:
Starting T
J
= 25°C, L = 446µH
R
G
= 25
, I
AS
= 57A. (See Figure 12)
Pulse width
300µs; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 57A, V
GS
= 0V
t
rr
Reverse Recovery Time
901 1351
ns
T
J
= 25°C, I
F
= 57A
Q
rr
Reverse Recovery Charge
15
23
µC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
57
228
FA57SA50LC
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
4
5
6
7
8
9
10
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
57A
FA57SA50LC
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
3000
6000
9000
12000
15000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0.1
1
10
100
1000
0.2
0.8
1.4
2.0
2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
1
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
60
120
180
240
300
360
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
57 A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
FA57SA50LC
www.irf.com
5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
10.0
20.0
30.0
40.0
50.0
60.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
PDF 
ZIP