1
File Number
3640.3
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
RURD620, RURD620S
6A, 200V Ultrafast Diodes
The RURD620, and RURD620S are ultrafast diodes with
soft recovery characteristics (t
rr
< 25ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
These devices are intended for use as
freewheeling/clamping diodes and rectifiers in a variety of
switching power supplies and other power switching
applications. Their low stored charge and ultrafast soft
recovery minimize ringing and electrical noise in many
power switching circuits, reducing power loss in the
switching transistors.
Formerly developmental type TA49037.
Symbol
Features
· Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns
· Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
· Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
· Avalanche Energy Rated
· Planar Construction
Applications
· Switching Power Supplies
· Power Switching Circuits
· General Purpose
Packaging
JEDEC STYLE TO-251
JEDEC STYLE TO-252
Ordering Information
PART NUMBER
PACKAGE
BRAND
RURD620
TO-251
RUR620
RURD620S
TO-252
RUR620
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-252 variant in tape and reel, i.e., RURD620S9A.
K
A
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
ANODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RURD620
RURD620S
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
200
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
200
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
200
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
T
C
= 160
o
C
6
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
Square Wave, 20kHz
12
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Halfwave, 1 phase, 60Hz
60
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
45
W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
10
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
,T
J
-65 to 175
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
300
o
C
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
260
260
o
C
Data Sheet
January 2000
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 6A
-
-
1.0
V
I
F
= 6A, T
C
= 150
o
C
-
-
0.83
V
I
R
V
R
= 200V
-
-
100
µ
A
V
R
= 200V, T
C
= 150
o
C
-
-
500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s
-
-
25
ns
I
F
= 6A, dI
F
/dt = 200A/
µ
s
-
-
30
ns
t
a
I
F
= 6A, dI
F
/dt = 200A/
µ
s
-
13
-
ns
t
b
I
F
= 6A, dI
F
/dt = 200A/
µ
s
-
6.5
-
ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
µ
s
-
20
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
30
-
pF
R
JC
-
-
3.5
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F
, FOR
W
ARD CURRENT (A)
1
30
0.5
10
0
0.25
0.5
0.75
1
1.25
1.5
25
o
C
100
o
C
175
o
C
V
R
, REVERSE VOLTAGE (V)
0
200
50
150
100
100
0.01
0.1
1
10
I
R
, REVERSE CURRENT (
µ
A)
0.001
25
o
C
100
o
C
175
o
C
RURD620, RURD620S
3
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
I
F
, FORWARD CURRENT (A)
1
0
12
20
16
0.5
6
t
rr
t
b
8
4
t
a
t, RECO
VER
Y TIMES (ns)
T
C
= 25
o
C, dI
F
/dt = 200A/
µ
s
1
0
24
40
32
0.5
6
16
8
t
rr
t
a
I
F
, FORWARD CURRENT (A)
t, RECO
VER
Y TIMES (ns)
t
b
T
C
= 100
o
C, dI
F
/dt = 200A/
µ
s
1
0
40
60
50
0.5
6
30
10
t
rr
I
F
, FORWARD CURRENT (A)
t, RECO
VER
Y TIMES (ns)
20
t
b
t
a
T
C
= 175
o
C, dI
F
/dt = 200A/
µ
s
5
1
0
155
160
170
150
175
165
2
3
4
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
6
DC
SQUARE WAVE
V
R
, REVERSE VOLTAGE (V)
20
0
40
0
50
100
150
200
30
10
C
J
, JUNCTION CAP
A
CIT
ANCE (pF)
50
RURD620, RURD620S
4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1A
L = 20mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RURD620, RURD620S
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