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Part Number IRFP9150

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4-63
File Number
2293.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
IRFP9150
25A, 100V, 0.150 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.
Formerly developmental type TA49230.
Features
· 25A, 100V
· r
DS(ON)
= 0.150
· Single Pulse Avalanche Energy Rated
· SOA is Power Dissipation Limited
· Nanosecond Switching Speeds
· Linear Transfer Characteristics
· High Input Impedance
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP9150
TO-247
IRFP9150
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet
August 1999
4-64
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP9150
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-100
V
Drain to Gate Voltage (R
GS
= 10k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
=100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-25
-18
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-100
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/
o
C
Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
as
1300
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= -250
µ
A (Figure 10)
1
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= -250
µ
A
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
µ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
250
µ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX,
V
GS
= 10V
-25
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= -10V, I
D
= -10A (Figure 8, 9)
-
0.090
0.150
Forward Transconductance (Note 2)
g
fs
V
DS
-10V, I
D
= -12.5A (Figure 12)
4
10
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= -50V, I
D
-25A, R
G
= 6.8
, R
L
= 2
(Figures 17 and 18) MOSFET switching times are es-
sentially independent of operating temperature).
-
16
24
ns
Rise Time
t
r
-
110
160
ns
Turn-Off Delay Time
t
d(OFF)
-
65
100
ns
Fall Time
t
f
-
46
70
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= -10V, I
D
= -25A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= -1.5mA (Figures 14, 19, 20)
(Gate Charge is Essentially Independent Of Operat-
ing Temperature)
-
82
120
nC
Gate to Source Charge
Q
gs
-
14
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
42
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= -25V, f = 1.0MHz
(Figure 11)
-
2400
-
pF
Output Capacitance
C
OSS
-
850
-
pF
Reverse Transfer Capacitance
C
RSS
-
400
-
pF
Internal Drain Inductance
L
D
Measured From the Drain
Lead, 6mm (0.25in) From
the Package to the Center
of the Die
Modified MOSFET
Symbol Showing the In-
ternal Device Induc-
tances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From the Source
Pin, 6mm (0.25in) From
Header to the Source
Bonding Pad
-
13
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
0.83
o
C/W
Thermal Resistance Junction to Ambient
R
JA
Free Air Operation
-
-
30
0
C/W
L
S
L
D
G
D
S
IRFP9150
4-65
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
-
-
-25
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-100
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -25A, V
GS
= 0V (Figure 13)
-
-0.9
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= -25A, dI
SD
/dt = 100A/
µ
s
-
150
300
ns
Reverse Recovered Charge
Q
RR
T
J
= 25
o
C, I
SD
= -25A, dI
SD
/dt = 100A/
µ
s
0.3
0.7
1.5
µ
C
NOTES:
2. Pulse test: pulse width
300
µ
s, duty cycle
2%.
3. Repetitive Rating: Pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3
4. V
DD
= 25V, start T
J
= 25
o
C, L = 3.2mH, R
G
= 25
,
peak I
AS
= 25A (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
-30
-25
-20
-10
0
I
D
, DRAIN CURRENT (A)
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
-15
-5
10
1
0.10
NORMALIZED EFFECTIVE TRANSIENT
0.01
10
-5
10
-4
10
-2
1
t
1
, SQUARE WAVE PULSE DURATION (s)
10
-3
10
-1
THERMAL IMPED
ANCE
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
JC
x R
JC
+ T
C
t
1
t
2
P
DM
DUTY CYCLE IN DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
IRFP9150
4-66
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN VOLTAGE (V)
100
10
1
1
10
100
IRFP9150,1
IRFP9150,1
IRFP9151
DC
1s
0.1s
100ms
10ms
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
IRFP9150
200
-100
-80
-60
-40
-20
0
I
D
, DRAIN CURRENT (A)
-10
-20
-30
-40
-50
(V
DS
), DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 12V
V
GS
= 10V
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 14V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
-40
-30
-20
-10
I
D
, DRAIN CURRENT (A)
0
-1
-2
-3
-4
-5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
-50
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
-100
-10
-1
-0.1
0
-2
-4
-6
-8
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D(ON),
DRAIN T
O
SOURCE CURRENT (A)
-10
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DS
-50V
350
250
200
100
50
r
DS(ON),
DRAIN T
O
SOURCE
0
-20
-40
-60
-80
-100
I
D
, DRAIN CURRENT (A)
150
300
ON RESIST
ANCE (m
)
V
GS
= 10V
V
GS
= 20V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
2.2
1.8
1.4
1.0
0.6
0.2
NORMALIZED
DRAIN T
O
SOURCE
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= -10A
IRFP9150
4-67
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0.75
0.85
0.95
1.05
1.15
1.25
NORMALIZED DRAIN T
O
SOURCE
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
µ
A
BREAKDO
WN V
O
L
T
A
G
E
4000
4500
2500
1000
500
0
C, CAP
A
CIT
ANCE (pF)
-10
-20
-30
-40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3500
3000
2000
1500
-50
C
OSS
C
RSS
C
ISS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
3
6
9
12
15
g
fs,
TRANSCONDUCT
ANCE (S)
0
-10
-20
-30
-40
-50
I
D
, DRAIN CURRENT (A)
25
o
C
150
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
100
10
1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
SD
, DRAIN CURRENT (A)
25
o
C
150
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
0
-5
-10
-15
-20
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
0
20
80
140
160
180
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
120
100
60
40
V
DS
= -20V
I
D
= -25A
V
DS
= -80V
V
DS
= -50V
IRFP9150