4-329
File Number
2088.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
IRFP340
11A, 400V, 0.550 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17424.
Features
· 11A, 400V
· r
DS(ON)
= 0.550
· Single Pulse Avalanche Energy Rated
· SOA is Power Dissipation Limited
· Nanosecond Switching Speeds
· Linear Transfer Characteristics
· High Input Impedance
· Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP340
TO-247
IRFP340
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Data Sheet
July 1999
4-330
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP340
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
400
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
11
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
6.8
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
44
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
480
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
µ
A (Figure 10)
400
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
µ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
µ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
11
-
-
A
Gate to Source Leakage
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 5.5A (Figures 8, 9)
-
0.47
0.55
Forward Transconductance (Note 2)
g
fs
V
DS
50V, I
D
= 5.5A (Figure 12)
6.1
9.1
-
S
Turn-On Delay Time
t
d(ON)
V
DD
=
200V, I
D
11A, R
GS
= 9.1
, R
L
= 17.4
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
14
21
ns
Rise Time
t
r
-
27
41
ns
Turn-Off Delay Time
t
d(OFF)
-
50
75
ns
Fall Time
t
f
-
24
36
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 10A, V
DS
= 0.8 x Rated BV
DSS,
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-
41
63
nC
Gate to Source Charge
Q
gs
-
6.0
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
23
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
1250
-
pF
Output Capacitance
C
OSS
-
300
-
pF
Reverse-Transfer Capacitance
C
RSS
-
80
-
pF
Internal Drain Inductance
L
D
Measured from the Drain
Lead, 6mm (0.25in) from the
Package to the Center of the
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6mm (0.25in) from
Header to the Source
Bonding Pad
-
12.5
-
nH
Junction to Case
R
JC
-
-
0.83
oC/W
Junction to Ambient
R
JA
Free Air Operation
-
-
30
oC/W
L
S
L
D
G
D
S
IRFP340
4-331
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
11
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
44
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 11A, V
GS
= 0V (Figure 13)
-
-
2.0
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 10A, dI
SD
/dt = 100A/
µ
s
170
370
790
ns
Reverse Recovered Charge
Q
RR
T
J
= 25
o
C, I
SD
= 10A, dI
SD
/dt = 100A/
µ
s
1.6
3.8
8.2
µ
C
NOTES:
2. Pulse test: pulse width
300
µ
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 7.0mH, R
G
= 50
, peak I
AS
= 11A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
25
150
15
12
9
0
6
I
D
, DRAIN CURRENT (A)
3
125
1
0.1
10
-2
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
SINGLE PULSE
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
DUTY FACTOR: D = t
1
/t
2
t
2
P
DM
t
1
NOTES:
t
2
T
J
= P
DM
x Z
JC
x R
JC
+ T
C
0.02
0.01
0.05
0.5
0.1
0.2
IRFP340
4-332
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
2
10
1
10
10
2
0.1
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
3
10
µ
s
100
µ
s
1ms
10ms
DC
1
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
40
80
120
160
0
200
15
12
9
0
6
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 4.0V
PULSE DURATION = 80
µ
s
3
V
GS
= 6.0V
V
GS
= 10V
V
GS
= 5.5V
DUTY CYCLE = 0.5% MAX
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
15
12
9
0
6
I
D
, DRAIN CURRENT (A)
3
V
GS
= 10V
V
GS
= 5.0V
V
GS
= 4V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 4.5V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
10
1
0.1
0
2
4
6
8
10
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
40
I
D
, DRAIN CURRENT (A)
10
20
30
0
50
5
4
3
0
2
R
DS(ON)
, DRAIN T
O
SOURCE
V
GS
= 20V
1
V
GS
= 10V
ON RESIST
ANCE
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
0
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
2.4
1.2
0
60
120
ON RESIST
ANCE
-20
-40
20
40
100
140 160
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
I
D
= 5.5A, V
GS
= 10V
IRFP340
4-333
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
1.15
0.95
0.75
-20
20
100
BREAKDO
WN V
O
L
T
A
GE
0
-40
40
80
120 140
I
D
= 250
µ
A
160
1
10
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2500
2000
1500
1000
500
0
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
10
2
10
3
C
OSS
C
RSS
I
D
, DRAIN CURRENT (A)
4
8
12
16
0
20
15
12
9
0
6
g
fs
, TRANSCONDUCT
ANCE (S)
3
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
100
1
0.1
0
0.3
0.6
0.9
1.2
1.5
T
J
= 25
o
C
T
J
= 150
o
C
10
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
Q
g
, GATE CHARGE (nC)
12
24
36
48
0
60
4
20
8
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
16
I
D
= 10A
V
DS
= 80V
12
0
V
DS
= 320V
V
DS
= 200V
IRFP340
4-334
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
µ
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2
µ
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
g(REF)
0
IRFP340
4-335
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
IRFP340
PDF 
ZIP