4-94
File Number
2287.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
IRFF9120
4A, 100V, 0.60 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power
field effect transistor is designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17501.
Features
· 4A, 100V
· r
DS(ON)
= 0.60
· Single Pulse Avalanche Energy Rated
· SOA is Power-Dissipation Limited
· Nanosecond Switching Speeds
· Linear Transfer Characteristics
· High Input Impedance
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9120
TO-205AF
IRFF9120
NOTE:
When ordering, use the entire part number.
D
G
S
DRAIN
(CASE)
SOURCE
GATE
Data Sheet
June 1999
4-95
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFF9120
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-100
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-100
V
Continuous Drain Current, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-4
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-16
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20
V
Maximum Power Dissipation, (Figure 14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
20
W
Linear Derating Factor (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.16
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
370
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
µ
A
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
VD
S
= VG
S
, I
D
= 250
µ
A
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Max Rating, V
GS
= 0V
-
-
-250
µ
A
V
DS
= Max Rating x 0.8, V
GS
= 0V, T
J
= 125
o
C
-
-
-1000
µ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V
-4
-
-
A
Gate to Source Leakage Forward
I
GSS
VG
S
= -20V
-
-
-100
nA
Gate to Source Leakage Reverse
IG
SS
V
GS
= 20V
-
-
100
nA
Drain to Source On-State Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= -2A
-
0.5
0.6
Forward Transconductance (Note 2)
g
fs
V
DS
> I
D(ON)
x r
DS(ON) Max
, I
D
= 2A
1.25
2
-
S
Turn-On Delay Time
t
D(ON)
V
DD
0.5BV
DSS
, I
D
=
4A, R
G
= 9.1
(Figure 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-
25
50
ns
Rise Time
t
r
-
50
100
ns
Turn-Off Delay Time
t
D(OFF)
-
50
100
ns
Fall Time
t
f
-
50
100
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
G(TOT)
V
GS
= 10V, I
D
= 4A, V
DS
= 0.8 Max BV
DSS
(See Figure 18 for Test Circuit) Gate Charge
is Essentially Independent of Operating
Temperature
-
16
22
nC
Gate to Source Charge
Q
GS
-
9
-
nC
Gate to Drain "Miller" Charge
Q
GD
-
7
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz,
See Figure 10
-
300
-
pF
Output Capacitance
C
OSS
-
200
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Internal Drain Inductance
L
D
Measured from the
Drain Lead, 5.0mm
(0.2in) From Header
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 5.0mm
(0.2in) from Header to
Source Bonding Pad
-
15
-
nH
Junction to Case
R
JC
-
-
6.25
o
C/W
Junction to Ambient
R
JA
Typical Socket Mount
-
-
175
o
C/W
G
D
S
IRFF9120
4-96
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction
Rectifier
-
-
-4
A
Pulse Source Current (Note 3)
I
SM
-
-
-16
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -4A, V
GS
= 0V
-
-
-1.5
V
Diode Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= 4A, dI
SD
/dt = 100A/
µ
s
-
230
-
ns
Reverse Recovery Charge
Q
RR
T
J
= 150
o
C, I
SD
= -4A, dI
SD
/dt = 100A/
µ
s
-
1.3
-
µ
C
NOTES:
2. Pulse test: Pulse width
300
µ
s, Duty Cycle 2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 250
o
C, L = 34.7mH, R
G
= 25
,
peak I
AS
= 4.0A. See Figures 15 and 16)
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
-3
0
25
50
100
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-5
150
-4
-2
-1
125
75
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
10
-3
10
-2
10
-1
1
10
-5
10
-4
1.0
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
t
2
IRFF9120
4-97
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
1
0.1
1
10
100
V
DS
DRAIN VOLTAGE (V)
I
D
DRAIN CURRENT (A)
OPERATION IN THIS REGION
IS LIMITED BY r
DS(ON)
T
J
= MAX RATED
10
µ
s
1ms
DC
SINGLE PULSE
T
C
= 25
o
C
10ms
100ms
-4
-2
-20
0
-10
-30
-40
-8
I
D
, DRAIN CURRENT (A)
10
-6
-50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µ
s
-9V
-8V
V
GS
= -7V
-6V
-5V
-4V
-10V
DUTY CYCLE = 0.5% MAX
5
4
3
2
1
0
-1
-2
-3
-4
-5
I
D
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10V
-9V
-8V
-7V
V = -6V
-5V
-4V
0
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
-2
-4
-6
-10
-6
-8
0
-2
-4
-10
I
D,
DRAIN CURRENT (A)
-8
V
DS
I
D(ON)
x
r
DS(ON)
MAXIMUM
T
J
= 25
o
C
T
J
= 55
o
C
T
J
= 125
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
-20
I
D,
DRAIN CURRENT (A)
-10
-5
-15
0
-25
2.0
1.6
1.2
0
0.4
r
DS(ON)
, DRAIN T
O
SOURCE
V
GS
= -20V
0.8
V
GS
= -10V
ON RESIST
ANCE
PULSE DURATION = 2
µ
s
2.2
1.4
0.6
80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
1.8
1.0
0.2
0
40
120
160
ON RESIST
ANCE V
O
L
T
A
GE
V
GS
= -10V
I
D
= -2A
IRFF9120
4-98
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
(Continued)
1.25
1.05
0.85
80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
1.15
0.95
0.75
0
40
120
160
BREAKDO
WN V
O
L
T
A
GE
0
-10
-20
-30
-40
-50
C, CAP
A
CIT
ANCE (pF)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
500
400
300
200
100
0
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
I
D
, DRAIN CURRENT (A)
-2
-4
-6
-8
0
-10
3
0
2
g
fs
, TRANSCONDUCT
ANCE (S)
1
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-100
-10
-1
-0.1
-0.4
-0.6
-0.8
-1.0
-1.2
-1.8
-1.4
-1.6
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
Q
g(TOT),
TOTAL GATE CHARGE (nC)
4
8
12
16
0
20
-20
-15
0
-10
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
-5
V
DS
= -20V
I
D
= -8A
V
DS
= -80V
V
DS
= -50V
IRFF9120
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