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Part Number IRF9520

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4-3
File Number
2281.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
IRF9520
6A, 100V, 0.600 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17501.
Features
· 6A, 100V
· r
DS(ON)
= 0.600
· Single Pulse Avalanche Energy Rated
· SOA is Power Dissipation Limited
· Nanosecond Switching Speeds
· Linear Transfer Characteristics
· High Input Impedance
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9520
TO-220AB
IRF9520
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN (FLANGE)
GATE
SOURCE
DRAIN
Data Sheet
July 1999
4-4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9520
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-100
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
=100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-6
-4
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-24
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20
V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
40
W
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.32
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
370
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= -250
µ
A, V
GS
= 0V (Figure 10)
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250
µ
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
-25
µ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
C
= 125
o
C
-
-
-250
µ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= -10V
-6
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±1
00
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= -3.5A, V
GS
= -10V (Figures 8, 9)
-
0.500
0.600
Forward Transconductance (Note 2)
gfs
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= -3.5A
( Figure 12)
0.9
2
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 0.5 x Rated BV
DSS
, I
D
-6.0A,
R
G
= 50
, R
L
= 7.7
for V
DSS
= 50
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
25
50
ns
Rise Time
t
r
-
50
100
ns
Turn-Off Delay Time
t
d(OFF)
-
50
100
ns
Fall Time
t
f
-
50
100
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= -10V, I
D
= -6A, V
DS
= 0.8 x Rated BV
DSS
(Figure 14) Gate Charge is Essentially
Independent of Operating Temperature
-
16
22
nC
Gate to Source Charge
Q
gs
-
9
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
7
-
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-
300
-
pF
Output Capacitance
C
OSS
-
200
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Internal Drain Inductance
L
D
Measured From the
Contact Screw on Tab To
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction-to-Case
R
JC
-
-
3.12
o
C/W
Thermal Resistance Junction-to-Ambient
R
JA
Typical Socket Mount
-
-
62.5
o
C/W
L
S
L
D
G
D
S
IRF9520
4-5
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Sym-
bol Showing the Integral
Reverse P-N Junction
Diode
-
-
-6.0
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-24
A
Source to Drain Diode Voltage
(Note 2)
V
SD
T
C
= 25
o
C, I
SD
= -6.0A, V
GS
= 0V
(Figure 13)
-
-
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= -6.0A, dI
SD
/dt = 100A/
µ
s
-
230
-
ns
Reverse Recovery Charge
Q
RR
T
J
= 150
o
C, I
SD
= -6.0A, dI
SD
/dt = 100A/
µ
s
-
1.3
-
µ
C
NOTES:
2. Pulse test: pulse width
300
µ
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 15.4mH, R
G
= 25
,
peak I
AS
= 6.0A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
G
D
S
T
A
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
6.0
4.8
3.6
2.4
1.2
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORMALIZED TRANSIENT
THERMAL IMPED
ANCE
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
SINGLE PULSE
P
DM
10
10
-1
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
t
1
t
2
0.1
0.02
0.2
0.5
0.01
0.05
IRF9520
4-6
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
I
D
, DRAIN CURRENT (A)
10
0.1
10
1
10
µ
s
100
µ
s
1ms
10ms
DC
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
100
T
J
= MAX RATED
T
C
= 25
o
C
100ms
I
D
, DRAIN CURRENT (A)
0
-10
-20
-30
-40
-2
-4
-6
-8
-10
-50
V
GS
= -9V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4V
PULSE DURATION = 80
µ
s
0
V
GS
= -8V
V
GS
= -10V
DUTY CYCLE = 0.5% MAX.
0
-1
0
-1
-2
-3
-5
-2
-3
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-4
-5
V
GS
= -7V
V
GS
= -10V
V
GS
= -9V
V
GS
= -4V
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX.
-10
-8
-6
-4
-2
0
0
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
T
J
= -55
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX.
V
DS
I
D(ON)
x r
DS(ON)
MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, DRAIN T
O
SOURCE
2.0
1.6
1.2
0.8
0.4
0
0
-5
-10
-15
-20
-25
V
GS
= -20V
V
GS
= -10V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX.
ON RESIST
ANCE (
)
NORMALIZED DRAIN T
O
SOURCE
2.2
1.4
1.0
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.8
80
ON RESIST
ANCE
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX.
V
GS
= -10V, I
D
= -4A
IRF9520
4-7
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
80
120
160
1.05
1.15
I
D
= 250
µ
A
500
100
0
0
-20
-50
C, CAP
A
CIT
ANCE (pF)
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
400
200
C
ISS
C
OSS
C
RSS
-10
-30
-40
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
3
2
1
0
0
-2
-4
-6
-8
-10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
g
fs
, TRANSCONDUCT
ANCE (S)
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX.
-0.4
-1.0
-1.2
-1.6
-1.8
-0.6
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-0.8
-1.4
-0.1
-1.0
-10
I
SD
, DRAIN CURRENT (A)
-100
T
J
= 25
o
C
T
J
= 150
o
C
0
-5
-10
0
4
8
12
16
V
DS
= -50V
V
DS
= -20V
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE (V)
I
D
= -6A
20
V
DS
= -80V
IRF9520