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Part Number IRF420

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5-1
Semiconductor
Features
· 2.2A and 2.5A, 450V and 500V
· r
DS(ON)
= 3.0
and 4.0
· SOA is Power Dissipation Limited
· Nanosecond Switching Speeds
· Linear Transfer Characteristics
· High Input Impedance
· Majority Carrier Device
· Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17405.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF420
TO-204AA
IRF420
IRF421
TO-204AA
IRF421
IRF422
TO-204AA
IRF422
IRF423
TO-204AA
IRF423
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1998
File Number
1571.3
IRF420, IRF421,
IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
IRF420
IRF421
IRF422
IRF423
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V
DS
500
450
500
450
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . V
DGR
500
450
500
450
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
2.5
1.6
2.5
1.6
2.2
1.4
2.2
1.4
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I
DM
10
10
8
8
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
20
±
20
±
20
±
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . P
D
50
50
50
50
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
0.4
0.4
0.4
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . E
AS
210
210
210
210
mJ
Operating and Storage Temperature . . . . . . . . . . . .T
J
, T
STG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
L
Package Body for 10s, See TB334 . . . . . . . . . . . . . . . T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
µ
A, V
GS
= 0V, (Figure 10)
IRF420, IRF422
500
-
-
V
IRF421, IRF423
450
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
µ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
J
= 125
o
C
-
-
250
µ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
(Figure 7)
IRF420, IRF421
2.5
-
-
A
IRF422, IRF423
2.2
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 1.4A, V
GS
= 10V, (Figures 8, 9)
IRF420, IRF421
-
2.5
3.0
IRF422, IRF423
-
3.0
4.0
Forward Transconductance (Note 2)
gfs
V
DS
10V, I
D
= 2.0A, (Figure 12)
1.5
2.3
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 250V, I
D
2.5A, R
G
= 18
, R
L
= 96
,
V
GS
= 10V, (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
Temperature
-
10
15
ns
Rise Time
t
r
-
12
18
ns
Turn-Off Delay Time
t
d(OFF)
-
28
42
ns
Fall Time
t
f
-
12
18
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
2.5A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
11
19
nC
Gate to Source Charge
Q
gs
-
5
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
6
-
nC
IRF420, IRF421, IRF422, IRF423
5-3
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
300
-
pF
Output Capacitance
C
OSS
-
75
-
pF
Reverse Transfer Capacitance
C
RSS
-
20
-
pF
Internal Drain Inductance
L
D
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die.
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances.
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.
-
12.5
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
2.5
o
C/W
Thermal Resistance Junction to Ambient
R
JA
Free Air Operation
-
-
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
2.5
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
10
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 2.5A, V
GS
= 0V, (Figure 13)
-
-
1.4
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 2.5A, dI
SD
/dt = 100A/
µ
s
130
270
540
ns
Reverse Recovered Charge
Q
RR
T
J
= 25
o
C, I
SD
= 2.5A, dI
SD
/dt = 100A/
µ
s
0.57
1.2
2.3
µ
C
NOTES:
2. Pulse test: pulse width
300
µ
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 60mH, R
G
= 25
, peak I
AS
= 2.5A, Figures 15, 16.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
D
L
S
D
S
G
G
D
S
IRF420, IRF421, IRF422, IRF423
5-4
Typical Performance Curves
T
C
= 25
o
C Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
150
25
2.5
2.0
1.5
0
1.0
I
D
, DRAIN CURRENT (A)
0.5
IRF422, IRF423
125
IRF420, IRF421
Z
JC
, TRANSIENT
10
1
0.1
0.01
10
-2
10
-5
10
-4
10
-3
0.1
1
10
SINGLE PULSE
t
1
, RECTANGULAR PULSE DURATION (s)
THERMAL IMPED
ANCE
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
JC
+ T
C
P
DM
t
1
t
2
10
1
10
3
1
10
10
2
0.1
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
IRF422/3
IRF420/1
IRF422/3
IRF420/1
IRF421/3
IRF420/2
10
µ
s
100
µ
s
1ms
DC
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
10ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
100
150
200
0
250
5
4
3
0
2
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 6V
V
GS
= 5.5V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
80
µ
s PULSE TEST
1
IRF420, IRF421, IRF422, IRF423
5-5
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
µ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE vs JUNCTION
TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
T
C
= 25
o
C Unless Otherwise Specified (Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
8
12
16
0
20
5
4
3
0
2
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 6V
V
GS
= 5.5V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
80
µ
s PULSE TEST
1
V
DS
50V
80
µ
s PULSE TEST
T
J
= 150
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
1
0.1
0.01
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
2
4
6
8
0
10
10
8
6
0
4
r
DS(ON)
, DRAIN T
O
SOURCE
V
GS
= 20V
80
µ
s PULSE TEST
2
V
GS
= 10V
ON RESIST
ANCE (
)
3.0
1.8
0.6
0
60
160
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED ON RESIST
ANCE
I
D
= 2.5A
2.4
1.2
0
-40
-20
20
40
80
100
140
120
V
GS
= 10V
1.25
1.05
0.85
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
I
D
= 250
µ
A
1.15
0.95
0.75
BREAKDO
WN V
O
L
T
A
GE
0
60
160
-60
-40
-20
20
40
80
100
140
120
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C, CAP
A
CIT
ANCE (pF)
1000
800
600
400
200
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
C
ISS
C
OSS
C
RSS
1
10
10
2
IRF420, IRF421, IRF422, IRF423
5-6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
T
C
= 25
o
C Unless Otherwise Specified (Continued)
I
D
, DRAIN CURRENT (A)
0.8
1.6
2.4
3.2
0
4.0
4.0
3.2
2.4
0
1.6
g
fs
, TRANSCONDUCT
ANCE (S)
PULSE DURATION = 80
µ
s
0.8
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
1
0.1
0
0.4
0.8
1.2
1.6
2.0
PULSE DURATION = 80
µ
s
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
4
8
12
16
0
20
20
16
12
0
8
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DS
= 400V
4
V
DS
= 250V
V
DS
= 100V
I
D
= 2.5A
IRF420, IRF421, IRF422, IRF423
5-7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
µ
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
G(REF)
0
(ISOLATED
V
DS
0.2
µ
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
IRF420, IRF421, IRF422, IRF423