CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

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HIP2101

100V/2A Peak, Low Cost, High Frequency

Half Bridge Driver

The HIP2101 is a high frequency, 100V Half Bridge
N-Channel power MOSFET driver IC. It is equivalent to the
HIP2100 with the added advantage of full TTL/CMOS
compatible logic input pins. The low-side and high-side gate
drivers are independently controlled and matched to 13ns.
This gives users total control over dead-time for specific
power circuit topologies. Undervoltage protection on both
the low-side and high-side supplies force the outputs low. An
on-chip diode eliminates the discrete diode required with
other driver ICs. A new level-shifter topology yields the low-
power benefits of pulsed operation with the safety of DC
operation. Unlike some competitors, the high-side output
returns to its correct state after a momentary undervoltage of
the high-side supply.

Features

ˇ Drives N-Channel MOSFET Half Bridge

ˇ SOIC, EPSOIC, QFN and DFN Package Options

ˇ SOIC, EPSOIC and DFN Packages Compliant with 100V

Conductor Spacing Guidelines of IPC-2221

ˇ Pb-free Product Available

(RoHS Compliant)

ˇ Bootstrap Supply Max Voltage to 114VDC

ˇ On-Chip 1

Bootstrap Diode

ˇ Fast Propagation Times for Multi-MHz Circuits

ˇ Drives 1000pF Load with Rise and Fall Times Typ. 10ns

ˇ TTL/CMOS Input Thresholds Increase Flexibility

ˇ Independent Inputs for Non-Half Bridge Topologies

ˇ No Start-Up Problems

ˇ Outputs Unaffected by Supply Glitches, HS Ringing Below

Ground, or HS Slewing at High dv/dt

ˇ Low Power Consumption

ˇ Wide Supply Range

ˇ Supply Undervoltage Protection

ˇ 3

Output Driver Resistance

ˇ QFN/DFN Package:

- Compliant to JEDEC PUB95 MO-220

QFN - Quad Flat No Leads - Package Outline

- Near Chip Scale Package footprint, which improves

PCB efficiency and has a thinner profile

Applications

ˇ Telecom Half Bridge Power Supplies

ˇ Avionics DC-DC Converters

ˇ Two-Switch Forward Converters

ˇ Active Clamp Forward Converters

Ordering Information

PART NUMBER

TEMP.

RANGE (°C)

PACKAGE

PKG.

DWG. #

HIP2101IB

-40 to 125

8 Ld SOIC

M8.15

HIP2101IBZ (Note 1)

-40 to 125

8 Ld SOIC (Pb-free) M8.15

HIP2101EIB

-40 to 125

8 Ld EPSOIC

M8.15C

HIP2101EIBZ
(Note 1)

-40 to 125

8 Ld EPSOIC
(Pb-free)

M8.15C

HIP2101IR

-40 to 125

16 Ld 5x5 QFN

L16.5x5

HIP2101IRZ (Note 1)

-40 to 125

16 Ld 5x5 QFN
(Pb-free)

L16.5x5

HIP2101IR4

-40 to 125

12 Ld 4x4 DFN

L12.4x4A

HIP2101IR4Z
(Note 1)

-40 to 125

12 Ld 4x4 DFN
(Pb-free)

L12.4x4A

NOTES:

Intersil Pb-free products employ special Pb-free material sets;

molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020C.

2. Add "T" suffix for Tape and Reel packing option.

Data Sheet

October 21, 2004

FN9025.8

FN9025.8

Absolute Maximum Ratings

Thermal Information

Supply Voltage, V

DD,

-V

(Notes 3, 4) . . . . . . . . -0.3V to 18V

LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.0V
Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V

+0.3V

Voltage on HO (Note 4) . . . . . . . . . . . . . . . V

-0.3V to V

+0.3V

Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V

to HB diode. . . . . . . . . . . . . . . . . . . 100mA

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)

Maximum Recommended Operating Conditions

Supply Voltage, V

. . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC

Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB . . V

+8V to V

+14.0V and V

-1V to V

+100V

HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns

Thermal Resistance (Typical)

(°C/W)

SOIC (Note 5) . . . . . . . . . . . . . . . . . . .

N/A

EPSOIC (Note 6) . . . . . . . . . . . . . . . . .

3.0

QFN (Note 6) . . . . . . . . . . . . . . . . . . . .

6.5

DFN (Note 6) . . . . . . . . . . . . . . . . . . . .

3.0

Max Power Dissipation at 25

C in Free Air (SOIC, Note 5) . . . . 1.3W

Max Power Dissipation at 25

C in Free Air (EPSOIC, Note 6). . 3.1W

Max Power Dissipation at 25

C in Free Air (QFN, Note 6). . . . . 3.3W

Storage Temperature Range . . . . . . . . . . . . . . . . . . . -65°C to 150°C
Junction Temperature Range . . . . . . . . . . . . . . . . . . -55°C to 150°C
Lead Temperature (Soldering 10s - SOIC Lead Tips Only). . 300°C
For Recommended soldering conditions see Tech Brief TB389.

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.

NOTES:

3. The HIP2101 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this

mode of operation.

4. All voltages referenced to V

unless otherwise specified.

is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

is measured in free air with the component mounted on a high effective thermal conductivity test board with "direct attach" features.

JC,

the

"case temp" is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.

Electrical Specifications

= V

= 12V, V

= V

= 0V, No Load on LO or HO, Unless Otherwise Specified

PARAMETERS

SYMBOL

TEST CONDITIONS

= 25°C

= -40°C TO

125°C

UNITS

MIN

TYP

MAX

MIN

MAX

SUPPLY CURRENTS

Quiescent Current

LI = HI = 0V

0.3

0.45

0.6

Operating Current

DDO

f = 500kHz

1.7

3.0

3.4

Total HB Quiescent Current

LI = HI = 0V

0.1

0.15

0.2

Total HB Operating Current

HBO

f = 500kHz

1.5

2.5

HB to V

Current, Quiescent

HBS

= V

= 114V

0.05

1.5

HB to V

Current, Operating

HBSO

f = 500kHz

0.7

INPUT PINS

Low Level Input Voltage Threshold

0.8

1.65

0.8

High Level Input Voltage Threshold

1.65

2.2

Input Pulldown Resistance

200

100

500

UNDER VOLTAGE PROTECTION

Rising Threshold

DDR

7.3

7.8

6.5

Threshold Hysteresis

DDH

0.5

HB Rising Threshold

HBR

6.5

6.9

7.5

HB Threshold Hysteresis

HBH

0.4

HIP2101

FN9025.8

BOOT STRAP DIODE

Low-Current Forward Voltage

VDD-HB

= 100

0.45

0.70

0.7

High-Current Forward Voltage

VDD-HB

= 100mA

0.7

0.92

Dynamic Resistance

VDD-HB

= 100mA

0.8

1.5

LO GATE DRIVER

Low Level Output Voltage

OLL

= 100mA

0.25

0.3

0.4

High Level Output Voltage

OHL

= -100mA, V

OHL

= V

-V

0.25

0.3

0.4

Peak Pullup Current

OHL

= 0V

Peak Pulldown Current

OLL

= 12V

HO GATE DRIVER

Low Level Output Voltage

OLH

= 100mA

0.25

0.3

0.4

High Level Output Voltage

OHH

= -100mA, V

OHH

= V

-V

0.25

0.3

0.4

Peak Pullup Current

OHH

= 0V

Peak Pulldown Current

OLH

= 12V

Electrical Specifications

= V

= 12V, V

= V

= 0V, No Load on LO or HO, Unless Otherwise Specified (Continued)

PARAMETERS

SYMBOL

TEST CONDITIONS

= 25°C

= -40°C TO

125°C

UNITS

MIN

TYP

MAX

MIN

MAX

Switching Specifications

= V

= 12V, V

= V

= 0V, No Load on LO or HO, Unless Otherwise Specified

PARAMETERS

SYMBOL

TEST

CONDITIONS

= 25°C

= -40°C

TO 125°C

UNITS

MIN

TYP

MAX

MIN

MAX

Lower Turn-Off Propagation Delay (LI Falling to LO Falling)

LPHL

Upper Turn-Off Propagation Delay (HI Falling to HO Falling)

HPHL

Lower Turn-On Propagation Delay (LI Rising to LO Rising)

LPLH

Upper Turn-On Propagation Delay (HI Rising to HO Rising)

HPLH

Delay Matching: Lower Turn-On and Upper Turn-Off

MON

Delay Matching: Lower Turn-Off and Upper Turn-On

MOFF

Either Output Rise/Fall Time

RC,

= 1000pF

Either Output Rise/Fall Time (3V to 9V)

= 0.1

0.5

0.6

0.8

Either Output Rise Time Driving DMOS

= IRFR120

Either Output Fall Time Driving DMOS

= IRFR120

Minimum Input Pulse Width that Changes the Output

Bootstrap Diode Turn-On or Turn-Off Time

HIP2101

Part Number HIP2101