1
File Number
4781.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABERTM is a trademark of Analogy, Inc.
1-888-INTERSIL or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
HGTG20N60A4, HGTP20N60A4
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Symbol
Features
· >100kHz Operation at 390V, 20A
· 200kHz Operation at 390V, 12A
· 600V Switching SOA Capability
· Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
C
· Low Conduction Loss
· Temperature Compensating SABERTM Model
www.intersil.com
· Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP20N60A4
TO-220AB
20N60A4
HGTG20N60A4
TO-247
20N60A4
NOTE: When ordering, use the entire part number.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
C
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
October 1999
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG20N60A4, HGTP20N60A4
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
70
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
40
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
280
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
±
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
100A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
290
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.32
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
µ
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
-
-
250
µ
A
T
J
= 125
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 20A,
V
GE
= 15V
T
J
= 25
o
C
-
1.8
2.7
V
T
J
= 125
o
C
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
µ
A, V
CE
= 600V
4.5
5.5
7.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V
L = 100
µ
H, V
CE
= 600V
100
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 20A, V
CE
= 300V
-
8.6
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 20A,
V
CE
= 300V
V
GE
= 15V
-
142
162
nC
V
GE
= 20V
-
182
210
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
=15V
R
G
= 3
L = 500
µ
H
Test Circuit (Figure 20)
-
15
-
ns
Current Rise Time
t
rI
-
12
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
73
-
ns
Current Fall Time
t
fI
-
32
-
ns
Turn-On Energy (Note 3)
E
ON1
-
105
-
µ
J
Turn-On Energy (Note 3)
E
ON2
-
280
350
µ
J
Turn-Off Energy (Note 2)
E
OFF
-
150
200
µ
J
HGTG20N60A4, HGTP20N60A4
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
= 15V
R
G
= 3
L = 500
µ
H
Test Circuit (Figure 20)
-
15
21
ns
Current Rise Time
t
rI
-
13
18
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
105
135
ns
Current Fall Time
t
fI
-
55
73
ns
Turn-On Energy (Note 3)
E
ON1
-
115
-
µ
J
Turn-On Energy (Note 3)
E
ON2
-
510
600
µ
J
Turn-Off Energy (Note 2)
E
OFF
-
330
500
µ
J
Thermal Resistance Junction To Case
R
JC
-
-
0.43
o
C/W
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
20
0
80
40
60
25
75
100
125
150
100
V
GE
= 15V
PACKAGE LIMIT
DIE CAPABILITY
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
60
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
20
300
400
200
100
500
600
0
80
100
40
120
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
µ
H
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
300
50
10
20
500
T
J
= 125
o
C, R
G
= 3
, L = 500
µ
H, V
CE
= 390V
100
40
30
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
ØJC
= 0.43
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
V
GE
15V
75
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
µ
s)
10
11
12
15
0
2
10
100
250
350
450
14
13
14
4
6
8
12
150
200
300
400
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
t
SC
I
SC
HGTG20N60A4, HGTP20N60A4
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
0.8
1.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
20
40
1.6
2.0
3.2
80
60
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
µ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
100
T
J
= 25
o
C
0.4
2.4
2.8
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
µ
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
20
40
80
60
100
0
0.8
1.2
1.6
2.0
0.4
2.4
2.8
E
ON2
, TURN-ON ENERGY LOSS (
µ
J)
1000
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
800
400
1200
0
15
10
20
25
30
35
40
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 500
µ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
200
5
1400
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
µ
J)
0
100
400
200
500
700
800
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
300
R
G
= 3
, L = 500
µ
H, V
CE
= 390V
15
10
20
25
30
35
40
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
,
TURN-ON DELA
Y TIME
(ns)
8
14
16
18
20
22
15
10
20
25
30
35
40
5
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 3
, L = 500
µ
H, V
CE
= 390V
12
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
4
8
20
16
12
24
36
32
28
R
G
= 3
, L = 500
µ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
15
10
20
25
30
35
40
5
HGTG20N60A4, HGTP20N60A4
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified (Continued)
80
60
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
120
100
110
90
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 3
, L = 500
µ
H, V
CE
= 390V
15
10
20
25
30
35
40
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
16
32
24
48
64
40
56
R
G
= 3
, L = 500
µ
H, V
CE
= 390V
72
80
15
10
20
25
30
35
40
5
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
80
120
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
160
200
240
6
PULSE DURATION = 250
µ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
40
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
I
G(REF)
= 1mA, R
L
= 15
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
8
12
16
V
CE
= 600V
20
40
60
80
120
100
140
160
0
I
CE
= 10A
0
0.2
0.4
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
125
25
150
1.8
0.8
E
TOT
A
L
, T
O
T
AL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 3
, L = 500
µ
H, V
CE
= 390V, V
GE
= 15V
1.4
1.2
1.6
I
CE
= 30A
I
CE
= 20A
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
3
1000
E
TOT
A
L
, T
O
T
AL SWITCHING ENERGY LOSS (mJ)
10
T
J
= 125
o
C, L = 500
µ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 10A
I
CE
= 20A
I
CE
= 30A
HGTG20N60A4, HGTP20N60A4
6
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAP
A
CIT
ANCE (nF)
0
20
40
60
80
100
0
1
3
4
5
2
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.7
10
12
1.8
2.0
1.9
11
13
14
15
16
2.1
2.2
V
CE
, COLLECT
OR T
O
EMITTER V
O
L
T
A
GE (V)
I
CE
= 30A
I
CE
= 20A
I
CE
= 10A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
µ
s,
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
,
NORMALIZED THERMAL RESPONSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 3
L = 500
µ
H
V
DD
= 390V
+
-
HGTG20N60A4D
DUT
DIODE TA49372
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTG20N60A4, HGTP20N60A4
7
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler's body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as "ECCOSORBDTM LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
CE
) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
MAX1
or f
MAX2
; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t
d(ON)I
are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JM
.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON2
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JM
- T
C
)/R
JC
.
The sum of device switching and conduction losses must not
exceed P
D
. A 50% duty factor was used (Figure 3) and the
conduction losses (P
C
) are approximated by
P
C
= (V
CE
x I
CE
)/2.
E
ON2
and E
OFF
are defined in the switching waveforms
shown in Figure 21. E
ON2
is the integral of the
instantaneous power loss (I
CE
x V
CE
) during turn-on and
E
OFF
is the integral of the instantaneous power loss
(I
CE
x V
CE
) during turn-off. All tail losses are included in the
calculation for E
OFF
; i.e., the collector current equals zero
(I
CE
= 0).
HGTG20N60A4, HGTP20N60A4
ECCOSORBDTM is a trademark of Emerson and Cumming, Inc.
8
HGTG20N60A4, HGTP20N60A4
TO-220AB
(Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
E
ØP
D
L
L
1
60
o
b
1
b
e
e
1
H
1
1
J
1
2
3
TERM. 4
Q
c
A
1
A
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.170
0.180
4.32
4.57
-
A
1
0.048
0.052
1.22
1.32
2, 4
b
0.030
0.034
0.77
0.86
2, 4
b
1
0.045
0.055
1.15
1.39
2, 4
c
0.018
0.022
0.46
0.55
2, 4
D
0.590
0.610
14.99
15.49
-
E
0.395
0.405
10.04
10.28
-
e
0.100 TYP
2.54 TYP
5
e
1
0.200 BSC
5.08 BSC
5
H
1
0.235
0.255
5.97
6.47
-
J
1
0.095
0.105
2.42
2.66
6
L
0.530
0.550
13.47
13.97
-
L
1
0.110
0.130
2.80
3.30
3
ØP
0.149
0.153
3.79
3.88
-
Q
0.105
0.115
2.66
2.92
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Dimension (without solder).
3. Solder finish uncontrolled in this area.
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 3 dated 7-97.
9
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTG20N60A4, HGTP20N60A4
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
b
b
1
c
D
E
L
L
1
ØR
1
2
e
1
3
1
J
1
ØS
Q
ØP
BACK VIEW
TERM. 4
3
e
b
2
2
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b
1
0.060
0.070
1.53
1.77
1, 2
b
2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
-
e
0.219 TYP
5.56 TYP
4
e
1
0.438 BSC
11.12 BSC
4
J
1
0.090
0.105
2.29
2.66
5
L
0.620
0.640
15.75
16.25
-
L
1
0.145
0.155
3.69
3.93
1
ØP
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
ØR
0.195
0.205
4.96
5.20
-
ØS
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L
1
.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
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