1
CD4041UBMS
CMOS Quad True/Complement Buffer
CD4041UBMS types are quad true/complement buffers con-
sisting of n- and p- channel units having low channel resis-
tance and high current (sourcing and sinking) capability. The
CD4041UBMS is intended for use as a buffer, line driver, or
CMOS-to-TTL driver. It can be used as an ultra-low power
resistor-network driver for A/D and D/A conversion, as a
transmission-line driver, and in other applications where high
noise immunity and low power dissipation are primary
design requirements.
The CD4041UBMS is supplied in these 14 lead outline pack-
ages:
Pinout
CD4041UBMS
TOP VIEW
Features
· High Voltage Type (20V Rating)
· Balanced Sink and Source Current; Approximately 4
Times Standard "B" Drive
· Equalized Delay to True and Complement Outputs
· 100% Tested for Quiescent Current at 20V
· Maximum Input Current of 1
µ
A at 18V Over Full
Package-Temperature Range;
- 100nA at 18V and +25
o
C
· 5V, 10V and 15V Parametric Ratings
· Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specificationsfor Description of
`B' Series CMOS Devices"
Applications
· High Current Source/Sink Driver
· CMOS-to-DTL/TTL Converter Buffer
· Display Driver
· MOS Clock Driver
· Resistor Network Driver (Ladder or Weighted R)
· Buffer
· Transmission Line Driver
Functional Diagram
FIGURE 1. SCHEMATIC DIAGRAM 1 OF 4 BUFFERS
Braze Seal DIP
H4Q
Frit Seal DIP
H1B
Ceramic Flatpack
H3W
E = A
F = A
A
G = B
H = B
B
VSS
VDD
D
N = D
M = D
C
L = C
K = C
1
2
3
4
5
6
7
14
13
12
11
10
9
8
A
3
1
E
F = A
E = A
2
F
B
6
4
G
H = B
G = B
5
H
C
10
8
K
L = C
K = C
9
L
D
13
11
M
N = D
M = D
12
N
VSS = 7
VDD = 14
VDD
VSS
VDD
VDD
VSS
VSS
VDD
VSS
VDD
VSS
COMPLEMENT
OUTPUT
TRUE
OUTPUT
INPUT
*
*
ALL INPUTS PROTECTED
BY CMOS INPUT
PROTECTION NETWORK
P
N
Data Sheet
December 1992
File Number
3309
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
2
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . . .±
10mA
Operating Temperature Range . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
±
1/32 Inch (1.59mm
±
0.79mm) from case for
10s Maximum
Thermal Resistance. . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . .500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
2
µ
A
2
+125
o
C
-
200
µ
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
2
µ
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
1.6
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
5.0
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
19
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-1.6
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-6.4
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-5.0
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-19
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
µ
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
µ
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.0
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
4.0
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
2.5
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
12.5
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being im-
plemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit is
0.050V max.
CD4041UBMS
3
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL
TPLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
120
ns
10, 11
+125
o
C, -55
o
C
-
162
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
80
ns
10, 11
+125
o
C, -55
o
C
-
108
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
1
µ
A
+125
o
C
-
30
µ
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
µ
A
+125
o
C
-
60
µ
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
µ
A
+125
o
C
-
120
µ
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
1.2
-
mA
-55
o
C
2.1
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
3.5
-
mA
-55
o
C
6.25
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
13
-
mA
-55
o
C
24
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-1.2
mA
-55
o
C
-
-2.1
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-4.6
mA
-55
o
C
-
-8.4
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-3.5
mA
-55
o
C
-
-6.25
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-13
mA
-55
o
C
-
-24
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
2
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C, -
55
o
C
8
-
V
Propagation Delay
TPHL
TPLH
VDD = 10V
1, 2, 3
+25
o
C
-
70
ns
VDD = 15V
1, 2, 3
+25
o
C
-
50
ns
CD4041UBMS
4
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
40
ns
VDD = 15V
1, 2, 3
+25
o
C
-
30
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
22.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
7.5
µ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
µ
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
µ
A
1, 4
+25
o
C
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
µ
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
µ
A
1, 4
+25
o
C
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
±
0.2
µ
A
Output Current (Sink)
IOL5
±
20% x Pre-Test Reading
Output Current (Source)
IOH5A
±
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CD4041UBMS
5
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9, Deltas
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
±
-0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1
(Note 1)
1, 2, 4, 5, 8, 9, 11,
12
3, 6, 7, 10, 13
14
Static Burn-In 2
(Note 1)
1, 2, 4, 5, 8, 9, 11,
12
7
3, 6, 10, 13, 14
Dynamic Burn-
In (Note 2)
-
7
14
1, 2, 4, 5, 8, 9, 11,
12
3, 6, 10, 13
Irradiation
(Note 3)
1, 2, 4, 5, 8, 9, 11,
12
7
3, 6, 10, 13, 14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K
±
5%, VDD = 18V
±
0.5V
2. Each pin except VDD and GND will have a series resistor of 4.75K
±
5%; VDD = 18V
±
0.5V
3. Each pin except VDD and GND will have a series resistor of 47K
±
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V
±
0.5V
TABLE 6. APPLICABLE SUBGROUPS (Continued)
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Typical Performance Characteristics
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 3. MINIMUM LOW (SINK) CURRENT CHARACTERIS-
TICS
OUTPUT LO
W CURRENT (IOL) (mA)
10V
5V
AMBIENT TEMPERATURE (T
A
) = +25
o
C
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
0
20
10
30
40
50
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
1
2
3
4
5
6
7
8
60
70
AMBIENT TEMPERATURE (T
A
) = +25
o
C
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
5V
10V
OUTPUT LO
W CURRENT (IOL) (mA)
0
20
10
30
40
50
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
1
2
3
4
5
6
7
8
60
70
CD4041UBMS
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