7-18
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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CD40107BMS
CMOS Dual 2 Input NAND Buffer/Driver
Features
· High Voltage Type (20V Rating)
· 32 Times Standard B Series Output Current Drive
Sinking Capability
- 136mA Typ. at VDD = 10V
- VDS = 1V
· 100% Tested for Quiescent Current at 20V
· 5V, 10V and 15V Parametric Ratings
· Maximum Input Current of 1
µ
A at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
· Noise Margin (Over Full Package/Temperature Range)
RL to VDD = 10k
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
· Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
`B' Series CMOS Devices"
Applications
· Driving Relays, Lamps, LEDs
· Line Driver
· Level Shifter (Up or Down)
Description
CD40107BMS is a dual 2 input NAND buffer/driver contain-
ing two independent 2 input NAND buffers with open drain
single n-channel transistor outputs. This device features a
wired OR capability and high output sink current capability
(136mA typ. at VDD = 10V, VDS = 1V).
The CD40107BMS is supplied in these 14 lead outline
packages:
Braze Seal DIP
H4H
Frit Seal DIP
H1B
Ceramic Flatpack
H3W
December 1992
File Number
3355
Pinouts
CD40107BF
TOP VIEW
Functional Diagram
NC
NC
A
B
C = A · B
NC
VSS
VDD
NC
NC
D
E
F = D · E
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
NC = NO CONNECTION
F = D · E
VSS
D
E
C = A · B
VSS
A
B
7-19
Specifications CD40107BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±
10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
±
1/32 Inch (1.59mm
±
0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For T
A
= -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For T
A
= +100
o
C to +125
o
C (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T
A
= Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
2
µ
A
2
+125
o
C
-
200
µ
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
2
µ
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Drive Voltage
VOL5A
VDD = 5V, IOL = 16mA
1
+25
o
C
-
0.4
V
Output Drive Voltage
VOL5B
VDD = 5V, IOL = 34mA
1
+25
o
C
-
1.0
V
VOL10A
VDD = 10V, IOL = 37mA
1
+25
o
C
-
0.5
V
Output Drive Voltage
VOL10B
VDD = 10V, IOL = 68mA
1
+25
o
C
-
1.0
V
VOL15
VDD = 15V, IOL = 50mA
1
+25
o
C
-
0.5
V
Output Current (Source)
IOH5A
No Internal Pull-Up Device
Output Current (Source)
IOH5B
Output Current (Source)
IOH10
Output Current (Source)
IOH15
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
µ
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
µ
A
1
+25
o
C
0.7
2.8
V
Functional (Note 3)
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2, 3)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.5
V
Input Voltage High
(Note 2, 3)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
3.5
-
V
Input Voltage Low
(Note 2, 3)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
4
V
Input Voltage High
(Note 2, 3)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
11
-
V
Tri-State Output
Leakage High
IOZ
VIN = VDD or GND
VOUT = VDD
VDD = 20V
1
+25
o
C
-
2
µ
A
2
+125
o
C
-
20
µ
A
VDD = 18V
3
-55
o
C
-
2
µ
A
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-20
Specifications CD40107BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL
TPLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
100
ns
10, 11
+125
o
C, -55
o
C
-
135
ns
NOTES:
1. CL = 50pF, RL = 120
, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
1
µ
A
+125
o
C
-
30
µ
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
µ
A
+125
o
C
-
60
µ
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
µ
A
+125
o
C
-
120
µ
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage (Note 5)
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
4.95
-
V
Output Voltage (Note 5)
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
9.95
-
V
Output Current (Sink)
IOL5A
VDD = 5.0V, VOUT = 0.4V
1, 2
+125
o
C
12
-
mA
-55
o
C
21
-
mA
Output Current (Sink)
IOL5B
VDD = 5V, VOUT = 1.0V
1, 2, 4
+125
o
C
25
-
mA
-55
o
C
44
-
mA
Output Current (Sink)
IOL10A
VDD = 10V, VOUT = 0.5V
1, 2, 4
+125
o
C
28
-
mA
-55
o
C
49
-
mA
Output Current (Sink)
IOL10B
VDD = 10V, VOUT = 1V
1, 2, 4
+125
o
C
51
-
mA
-55
o
C
89
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 0.5V
1, 2
+125
o
C
38
-
mA
-55
o
C
66
-
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2, 4
+25
o
C, +125
o
C,
-55
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2, 4
+25
o
C, +125
o
C,
-55
o
C
+7
-
V
7-21
Specifications CD40107BMS
Propagation Delay
TPHL
VDD = 10V
1, 2, 3
+25
o
C
-
90
ns
VDD = 15V
1, 2, 3
+25
o
C
-
60
ns
Propagation Delay
TPLH
VDD = 10V
1, 2, 3
+25
o
C
-
120
ns
VDD = 15V
1, 2, 3
+25
o
C
-
100
ns
Transition Time
TTHL
VDD = 10V
1, 2, 3
+25
o
C
-
40
ns
VDD = 15V
1, 2, 3
+25
o
C
-
20
ns
Transition Time
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
70
ns
VDD = 15V
1, 2, 3
+25
o
C
-
50
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 120
, pull up resistor to VDD, Input TR, TF < 20ns.
4. Measured with external pull-up resistor RL = 10K to VDD
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
7.5
µ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
µ
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
µ
A
1, 4
+25
o
C
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
µ
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
µ
A
1, 4
+25
o
C
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1, 5
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES:
1. All voltages referenced to device GND.
2. CL = 50pF, RL = 120
, pull up resistor to VDD, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
5. Measured with external pull-up resistor RL = 10K to VDD
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
±
0.2
µ
A
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
7-22
Specifications CD40107BMS
Output Current (Sink)
IOL5
±
20% x Pre-Test Reading
Output Current (Source)
IOH5A
±
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
±
-0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1
(Note 1)
1, 2, 5, 6, 8, 9,
12, 13
3, 4, 7, 10, 11
14
Static Burn-In 2
(Note 1)
1, 2, 5, 6, 8, 9,
12, 13
7
3, 4, 10, 11, 14
Dynamic Burn-In
(Note 3)
1, 2, 6, 8, 12, 13
7
14
5, 9
-
3, 4, 10, 11
Irradiation (Note 2)
1, 2, 5, 6, 8, 9,
12, 13
7
3, 4, 10, 11, 14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K
±
5%, VDD = 18V
±
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
±
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V
±
0.5V
3. Each pin except VDD and GND will have a series resistor of 4.75K
±
5%, VDD = 18V
±
.5.
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
SYMBOL
DELTA LIMIT
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