2003-05-09
Page 1
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
Opti
MOS
®
Power-Transistor
Product Summary
V
DS
30
V
R
DS(on)
max. SMD version
5.9
m
I
D
80
A
Feature
·
N-Channel
·
Enhancement mode
·
Logic Level
·
Low On-Resistance R
DS(on)
·
Excellent Gate Charge x R
DS(on)
product (FOM)
·
Superior thermal resistance
·
175°C operating temperature
·
Avalanche rated
·
dv/dt rated
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
Marking
2N03L06
2N03L06
2N03L06
Type
Package
Ordering Code
SPP80N03S2L-06
P- TO220 -3-1 Q67042-S4088
SPB80N03S2L-06
P- TO263 -3-2 Q67042-S4089
SPI80N03S2L-06
P- TO262 -3-1 Q67042-S4092
Maximum Ratings, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
1)
T
C
=25°C
I
D
80
80
A
Pulsed drain current
T
C
=25°C
I
D puls
320
Avalanche energy, single pulse
I
D
=20A,
V
DD
=25V,
R
GS
=25
E
AS
240
mJ
Repetitive avalanche energy, limited by T
jmax
2)
E
AR
15
Reverse diode dv/dt
I
S
=80A,
V
DS
=24V,
di/dt=200A/µs, T
jmax
=175°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
150
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
2003-05-09
Page 2
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
0.68
1
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
30
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 80 µA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=30V,
V
GS
=0V,
T
j
=25°C
V
DS
=30V,
V
GS
=0V,
T
j
=125°C
I
DSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=80A
V
GS
=4.5V, I
D
=80A, SMD version
R
DS(on)
-
-
7
6.6
9.5
9.2
m
Drain-source on-state resistance
4)
V
GS
=10V, I
D
=80A
V
GS
=10V, I
D
=80A, SMD version
R
DS(on)
-
-
5
4.6
6.2
5.9
1Current limited by bondwire ; with an R
thJC
= 1K/W the chip is able to carry I
D
= 120A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
2003-05-09
Page 3
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=80A
44
88
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f=1MHz
-
1900 2530 pF
Output capacitance
C
oss
-
740
990
Reverse transfer capacitance
C
rss
-
175
265
Turn-on delay time
t
d(on)
V
DD
=15V,
V
GS
=10V,
I
D
=20A,
R
G
=3.6
-
10
15
ns
Rise time
t
r
-
23
35
Turn-off delay time
t
d(off)
-
73
109
Fall time
t
f
-
61
91
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=24V, I
D
=80A
-
6
8
nC
Gate to drain charge
Q
gd
-
18
27
Gate charge total
Q
g
V
DD
=24V, I
D
=80A,
V
GS
=0 to 10V
-
51
68
Gate plateau voltage
V
(plateau) V
DD
=24V, I
D
=80A
-
3.1
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
80
A
Inv. diode direct current, pulsed
I
SM
-
-
320
Inverse diode forward voltage
V
SD
V
GS
=0V,
I
F
=80A
-
0.9
1.3
V
Reverse recovery time
t
rr
V
R
=15V,
I
F=
l
S
,
di
F
/dt=100A/µs
-
41
52
ns
Reverse recovery charge
Q
rr
-
46
58
nC
2003-05-09
Page 4
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
1 Power dissipation
P
tot
= f (
T
C
)
parameter: V
GS
4 V
0
20
40
60
80 100 120 140 160
°C
190
T
C
0
20
40
60
80
100
120
W
160
SPP80N03S2L-06
P
tot
2 Drain current
I
D
= f (
T
C
)
parameter: V
GS
10 V
0
20
40
60
80 100 120 140 160
°C
190
T
C
0
10
20
30
40
50
60
70
A
90
SPP80N03S2L-06
I
D
4 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP80N03S2L-06
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
SPP80N03S2L-06
I
D
R
DS(on)
=
V
DS
/
I
D
1 ms
100 µs
t
p = 22.0µs
2003-05-09
Page 5
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
5 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25°C
parameter: t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
20
40
60
80
100
120
140
160
A
190
SPP80N03S2L-06
I
D
VGS [V]
a
a
3.5
b
b
4.0
c
c
4.5
d
d
5.0
e
e
6.0
f
P
tot
= 150W
f
10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter:
V
GS
0
20
40
60
80 100 120 140 160
A
200
I
D
0
10
20
30
40
50
60
70
80
m
100
R
DS(on)
a
b
c
d
e
f
V
GS
[V]=
a= 3.5
b= 4
c= 4.5
d= 5
e= 6
f= 10
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
GS
0
20
40
60
80
100
120
A
160
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
0
20
40
60
80
A
120
I
D
0
10
20
30
40
50
60
70
80
90
100
S
120
g
fs
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