2003-04-24
Page 1
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Opti
MOS
®
Power-Transistor
Product Summary
V
DS
30
V
R
DS(on)
5.2
m
I
D
80
A
Feature
·
N-Channel
·
Enhancement mode
·
Logic Level
·
Excellent Gate Charge x R
DS(on)
product (FOM)
·
Superior thermal resistance
·
175°C operating temperature
·
Avalanche rated
·
dv/dt rated
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
Marking
2N03L05
2N03L05
2N03L05
Type
Package
Ordering Code
SPP80N03S2L-05
P- TO220 -3-1 Q67042-S4033
SPB80N03S2L-05
P- TO263 -3-2 Q67042-S4032
SPI80N03S2L-05
P- TO262 -3-1 Q67042-S4093
Maximum Ratings, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
1)
T
C
=25°C
I
D
80
80
A
Pulsed drain current
T
C
=25°C
I
D puls
320
Avalanche energy, single pulse
I
D
=80 A ,
V
DD
=25V,
R
GS
=25
E
AS
325
mJ
Repetitive avalanche energy, limited by T
jmax
2)
E
AR
16
Reverse diode dv/dt
I
S
=80A,
V
DS
=24V,
di/dt=200A/µs, T
jmax
=175°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
167
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
2003-04-24
Page 2
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
0.6
0.9
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
30
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=110µA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=30V,
V
GS
=0V,
T
j
=25°C
V
DS
=30V,
V
GS
=0V,
T
j
=125°C
I
DSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=55A
V
GS
=4.5V, I
D
=55A, SMD version
R
DS(on)
-
-
5.6
5.2
7.5
7.2
m
Drain-source on-state resistance
4)
V
GS
=10V, I
D
=55A
V
GS
=10V, I
D
=55A, SMD version
R
DS(on)
-
-
4
3.7
5.2
4.9
1Current limited by bondwire ; with an R
thJC
= 0.9K/W the chip is able to carry I
D
= 139A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
2003-04-24
Page 3
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=80A
55
110
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f=1MHz
-
2500 3320 pF
Output capacitance
C
oss
-
975
1300
Reverse transfer capacitance
C
rss
-
215
325
Gate resistance
R
G
-
1.75
-
Turn-on delay time
t
d(on)
V
DD
=15V,
V
GS
=10V,
I
D
=20A,
R
G
=2.7
-
10
15
ns
Rise time
t
r
-
18
27
Turn-off delay time
t
d(off)
-
44
66
Fall time
t
f
-
20
30
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=24V, I
D
=40A
-
7.9
10.5 nC
Gate to drain charge
Q
gd
-
23.3
35
Gate charge total
Q
g
V
DD
=24V, I
D
=40A,
V
GS
=0 to 10V
-
67.5
89.7
Gate plateau voltage
V
(plateau) V
DD
=24V, I
D
=40A
-
3.2
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
80
A
Inv. diode direct current, pulsed
I
SM
-
-
320
Inverse diode forward voltage
V
SD
V
GS
=0V,
I
F
=80A
-
0.95
1.26 V
Reverse recovery time
t
rr
V
R
=15V,
I
F=
l
S
,
di
F
/dt=100A/µs
-
46.5
58.1 ns
Reverse recovery charge
Q
rr
-
55.5
69.4 nC
2003-04-24
Page 4
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
1 Power dissipation
P
tot
= f (
T
C
)
parameter: V
GS
4 V
0
20
40
60
80 100 120 140 160
°C
190
T
C
0
20
40
60
80
100
120
140
W
180
SPP80N03S2L-05
P
tot
2 Drain current
I
D
= f (
T
C
)
parameter: V
GS
10 V
0
20
40
60
80 100 120 140 160
°C
190
T
C
0
10
20
30
40
50
60
70
A
90
SPP80N03S2L-05
I
D
4 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP80N03S2L-05
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
SPP80N03S2L-05
I
D
R
DS(on)
=
V
DS
/
I
D
1 ms
100 µs
t
p = 12.0µs
2003-04-24
Page 5
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
5 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25°C
parameter: t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
20
40
60
80
100
120
140
160
A
190
SPP80N03S2L-05
I
D
VGS [V]
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
P
tot
= 167W
i
10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter:
V
GS
0
20
40
60
80
100
A
140
I
D
0
2
4
6
8
10
12
m
16
SPP80N03S2L-05
R
DS(on)
V
GS
[V] =
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0
1
2
3
4
V
6
V
GS
0
25
50
75
100
125
150
175
200
A
250
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
0
25
50
75 100 125 150 175 200
A
250
I
D
0
20
40
60
80
100
S
140
g
fs
2003-04-24
Page 6
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 55 A,
V
GS
= 10 V
-60
-20
20
60
100
140 °C
200
T
j
0
1
2
3
4
5
6
7
8
9
10
11
12
m
14
SPP80N03S2L-05
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS
-60
-20
20
60
100
°C
180
Tj
0
0.5
1
1.5
2
V
3
V
GS(th)
0,855mA
110µA
11 Typ. capacitances
C = f (
V
DS
)
parameter:
V
GS
=0V, f=1 MHz
0
5
10
15
20
V
30
V
DS
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj , t
p
= 80 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
0
10
1
10
2
10
3
10
A
SPP80N03S2L-05
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
2003-04-24
Page 7
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
13 Typ. avalanche energy
E
AS
= f (
T
j
)
par.: I
D
= 80 A ,
V
DD
= 25 V,
R
GS
= 25
25
45
65
85
105
125
145
°C
185
T
j
0
50
100
150
200
250
mJ
350
E
AS
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= 40 A pulsed
0
20
40
60
80
nC
110
Q
Gate
0
2
4
6
8
10
12
V
16
SPP80N03S2L-05
V
GS
0,8 V
DS max
DS max
V
0,2
15 Drain-source breakdown voltage
V
(BR)DSS
= f (
T
j
)
parameter: I
D
=10 mA
-60
-20
20
60
100
140
°C
200
T
j
27
28
29
30
31
32
33
34
V
36
SPP80N03S2L-05
V
(BR)DSS
2003-04-24
Page 8
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP80N03S2L-05, BSPB80N03S2L-05 and BSPI80N03S2L-05, for
simplicity the device is referred to by the term SPP80N03S2L-05, SPB80N03S2L-05 and SPI80N03S2L-05
throughout this documentation
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