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Part Number SPx15N60C3

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2003-07-01
Page 1
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Cool MOSTM
Power Transistor
V
DS
@
T
jmax
650
V
R
DS(on)
0.28
I
D
15
A
Feature
·
New revolutionary high voltage technology
·
Ultra low gate charge
·
Periodic avalanche rated
·
Extreme dv/dt rated
·
Ultra low effective capacitances
·
Improved transconductance
·
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
P-TO262-3-1
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
15N60C3
15N60C3
15N60C3
Type
Package
Ordering Code
SPP15N60C3
P-TO220-3-1
Q67040-S4600
SPI15N60C3
P-TO262-3-1
Q67040-S4601
SPA15N60C3
P-TO220-3-31 Q67040-S4603
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
15
9.4
15
1)
9.4
1)
A
Pulsed drain current,
t
p
limited by
T
jmax
I
D puls
45
45
A
Avalanche energy, single pulse
I
D
=7.5A,
V
DD
=50V
E
AS
460
460
mJ
Avalanche energy, repetitive t
AR
limited by
T
jmax
2)
I
D
=15A,
V
DD
=50V
E
AR
0.8
0.8
Avalanche current, repetitive t
AR
limited by
T
jmax
I
AR
15
15
A
Gate source voltage static
V
GS
±20
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±
30
±
30
Power dissipation,
T
C
= 25°C
P
tot
156
34
W
SPP_I
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
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2003-07-01
Page 2
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 15 A,
T
j
= 125 °C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
0.8
K/W
Thermal resistance, junction - case, FullPAK
R
thJC_FP
-
-
3.7
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
R
thJA_FP
-
-
80
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
T
sold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage
V
(BR)DSS V
GS
=0V, I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=15A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=675
µ
A, VGS=VDS
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600V,
V
GS
=0V,
T
j
=25°C
T
j
=150°C
-
-
0.1
-
1
100
µA
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=9.4A
T
j
=25°C
T
j
=150°C
-
-
0.25
0.68
0.28
-
Gate input resistance
R
G
f=1MHz, open drain
-
1.23
-
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2003-07-01
Page 3
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=9.4A
-
11.9
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
1660
-
pF
Output capacitance
C
oss
-
540
-
Reverse transfer capacitance
C
rss
-
40
-
Effective output capacitance,
4)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
80
-
Effective output capacitance,
5)
time related
C
o(tr)
-
127
-
Turn-on delay time
t
d(on)
V
DD
=480V,
V
GS
=0/10V,
I
D
=15A,
R
G
=4.3
-
10
-
ns
Rise time
t
r
-
5
-
Turn-off delay time
t
d(off)
-
50
80
Fall time
t
f
-
5
10
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=480V, I
D
=15A
-
7
-
nC
Gate to drain charge
Q
gd
-
29
-
Gate charge total
Q
g
V
DD
=480V, I
D
=15A,
V
GS
=0 to 10V
-
63
-
Gate plateau voltage
V
(plateau)
V
DD
=480V, I
D
=15A
-
5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV
=
E
AR
*
f
.
3Soldering temperature for TO-263: 220°C, reflow
4C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
5C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
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2003-07-01
Page 4
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
15
A
Inverse diode direct current,
pulsed
I
SM
-
-
45
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=480V, I
F
=I
S
,
di
F
/dt
=100A/µs
-
460
-
ns
Reverse recovery charge
Q
rr
-
27
-
µC
Peak reverse recovery current
I
rrm
-
55
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
T
j
=25°C
-
1300
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
R
th1
0.012
0.012
K/W
C
th1
0.0002495
0.0002495
Ws/K
R
th2
0.023
0.023
C
th2
0.0009406
0.0009406
R
th3
0.043
0.043
C
th3
0.001298
0.001298
R
th4
0.156
0.176
C
th4
0.00362
0.00362
R
th5
0.178
0.371
C
th5
0.009046
0.008025
R
th6
0.072
2.522
C
th6
0.412
0.412
SPP_B
SPP_B
External Heatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
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2003-07-01
Page 5
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
1 Power dissipation
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
°C
160
T
C
0
20
40
60
80
100
120
140
W
170
SPP15N60C3
P
tot
2 Power dissipation FullPAK
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
°C
160
T
j
0
5
10
15
20
25
W
35
P
tot
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
=25°C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A

I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
I
D
= f (
V
DS
)
parameter: D = 0,
T
C
= 25°C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A

I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
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Page 6
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
5 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W

Z
thJ
C
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
Z
thJC
= f (
t
p
)
parameter: D =
t
p
/t
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W

Z
thJ
C
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25°C
parameter: t
p
= 10 µs,
V
GS
0
4
8
12
16
20
V
28
V
DS
0
10
20
30
40
A
60

I
D
Vgs = 20V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
Vgs = 4V
8 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=150°C
parameter: t
p
= 10 µs,
V
GS
0
4
8
12
16
20
V
28
V
DS
0
5
10
15
20
A
30

I
D
Vgs = 20V
Vgs = 7V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
Vgs = 4V
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Page 7
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
9 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
=150°C,
V
GS
0
5
10
15
20
A
30
I
D
0.4
0.6
0.8
1
1.2
1.4
1.8

R
D
S
(
on)
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 7V
Vgs = 20V
10 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 9.4 A,
V
GS
= 10 V
-60
-20
20
60
100
°C
180
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.6
SPP15N60C3
R
DS(on)
typ
98%
11 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 10 µs
0
2
4
6
V
10
V
GS
0
10
20
30
40
A
60

I
D
25°C
150°C
12 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= 15 A pulsed
0
10
20
30
40
50
60
70
80
nC
100
Q
Gate
0
2
4
6
8
10
12
V
16
SPP15N60C3
V
GS
0,8 V
DS max
DS max
V
0,2
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SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
13 Forward characteristics of body diode
I
F
= f (V
SD
)
parameter: Tj , t
p
= 10 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
2
10
A
SPP15N60C3
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
14 Avalanche SOA
I
AR
= f (t
AR
)
par.:
T
j
150 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
µs
t
AR
0
3
6
9
A
15

I
AR
Tj(START)=25°C
Tj(START)=125°C
15 Avalanche energy
E
AS
= f (
T
j
)
par.: I
D
= 7.5 A,
V
DD
= 50 V
20
40
60
80
100
120
°C
160
T
j
0
0.1
0.2
0.3
mJ
0.5

E
AS
16 Drain-source breakdown voltage
V
(BR)DSS
= f (
T
j
)
-60
-20
20
60
100
°C
180
T
j
540
560
580
600
620
640
660
680
V
720
SPP15N60C3
V
(BR)DSS
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SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
17 Avalanche power losses
P
AR
= f (
f
)
parameter:
E
AR
=0.8mJ
10
4
10
5
10
6
Hz
f
0
100
200
300
400
500
600
700
W
900

P
AR
18 Typ. capacitances
C = f (
V
DS
)
parameter:
V
GS
=0V, f=1 MHz
0
100
200
300
400
V
600
V
DS
0
10
1
10
2
10
3
10
4
10
pF

C
Ciss
Coss
Crss
19 Typ.
C
oss
stored energy
E
oss
=
f
(
V
DS
)
0
100
200
300
400
V
600
V
DS
0
3
6
9
µJ
15

E
oss
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SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Definition of diodes switching characteristics
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Page 11
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
P-TO-220-3-1
A
B
A
0.25
M
2.8
15.38
±0.6
2.54
0.75
±0.1
±0.13
1.27
4.44
B
9.98
±0.48
0.05
All metal surfaces tin plated, except area of cut.
C
±0.2
10
±0.4
3.7
C
0.5
±0.1
±0.9
5.23
13.5
±0.5
3x
Metal surface min. x=7.25, y=12.3
2x
±0.2
±0.22
1.17
±0.2
2.51
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SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
P-TO-262-3-1 (I
2
-PAK)
B
A
0.25
M
Typical
2.54
3 x 0.75
±0.1
1.05
1.27
B
9.25
±0.2
0.05
1)
Metal surface min. X = 7.25, Y = 6.9
C
11.6
±0.3
10
±0.2
C
2.4
0.5
±0.1
±0.2
4.55
13.5
±0.5
All metal surfaces tin plated, except area of cut.
±0.3
1
8.5
1)
2 x
4.4
7.55
1)
0...0.15
0...0.3
2.4
A
P-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
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2003-07-01
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SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

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cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
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