2002-08-12
Page 1
SPP04N60C2, SPB04N60C2
SPA04N60C2
Final data
Cool MOSTM
Power Transistor
Feature
·
New revolutionary high voltage technology
·
Ultra low gate charge
·
Periodic avalanche rated
·
Extreme dv/dt rated
·
Ultra low effective capacitances
Product Summary
650
V
R
DS(on)
0.95
I
D
4.5
A
V
DS
@ T
jmax
P-TO220-3-31
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31
1
2
3
Marking
04N60C2
04N60C2
04N60C2
Type
Package
Ordering Code
SPP04N60C2
P-TO220-3-1
Q67040-S4304
SPB04N60C2
P-TO263-3-2
Q67040-S4305
SPA04N60C2
P-TO220-3-31 Q67040-S4330
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
4.5
2.8
4.5
1)
2.8
1)
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
9
9
A
Avalanche energy, single pulse
I
D
=3.6A,
V
DD
=50V
E
AS
130
130
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
2)
I
D
=4.5A,
V
DD
=50V
E
AR
0.4
0.4
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
4.5
4.5
A
Reverse diode dv/dt
I
S
= 4.5 A,
V
DS
<
V
DD
, d
i
/d
t
=100A/
µ
s,
T
jmax
=150°C
dv/dt
6
6
V/ns
Gate source voltage
V
GS
±20
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±
30
±
30
Power dissipation,
T
C
= 25°C
P
tot
50
31
W
SPP_B
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
2002-08-12
Page 2
SPP04N60C2, SPB04N60C2
SPA04N60C2
Final data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.5
K/W
Thremal resistance, junction - case, FullPAK
R
thJC_FP
-
-
4
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
R
thJA_FP
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
35
62
-
Linear derating factor
-
-
0.4
W/K
Linear derating factor, FullPAK
-
-
0.25
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
°C
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=0.25mA
V
(BR)DSS
600
-
-
V
Drain-source avalanche breakdown voltage
V
GS
=0V, I
D
=4.5A
V
(BR)DS
-
700
-
Gate threshold voltage, V
GS
= V
DS
I
D
=200µA, T
j
=25°C
V
GS(th)
3.5
4.5
5.5
Zero gate voltage drain current
V
DS
= 600 V, V
GS
= 0 V, T
j
= 25 °C
V
DS
= 600 V, V
GS
= 0 V, T
j
= 150 °C
I
DSS
-
-
0.5
-
1
50
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
-
-
100
nA
Drain-source on-state resistance
V
GS
=10V, I
D
=2.8A, T
j
=25°C
R
DS(on)
-
0.85
0.95
Gate input resistance
f = 1 MHz, open drain
R
G
-
0.95
-
2002-08-12
Page 3
SPP04N60C2, SPB04N60C2
SPA04N60C2
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=2.8A
-
2.5
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
-
580
-
pF
Output capacitance
C
oss
-
220
-
Reverse transfer capacitance
C
rss
-
7
-
Effective output capacitance,
4)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
20
-
Effective output capacitance,
5)
time related
C
o(tr)
-
35
-
Turn-on delay time
t
d(on)
V
DD
=380V, V
GS
=0/13V,
I
D
=4.5A,
R
G
=18
, T
j
=125°C
-
10
-
ns
Rise time
t
r
-
31
-
Turn-off delay time
t
d(off)
-
44
66
Fall time
t
f
-
12.5
18.8
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=4.5A
-
4.5
-
nC
Gate to drain charge
Q
gd
-
11
-
Gate charge total
Q
g
V
DD
=350V, I
D
=4.5A,
V
GS
=0 to 10V
-
17.6
22.9
Gate plateau voltage
V
(plateau)
V
DD
=350V, I
D
=4.5A
-
8
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
5C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2002-08-12
Page 4
SPP04N60C2, SPB04N60C2
SPA04N60C2
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
4.5
A
Inverse diode direct current,
pulsed
I
SM
-
-
9
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=350V, I
F
=I
S
,
di
F
/dt=100A/µs
-
900
1530 ns
Reverse recovery charge
Q
rr
-
3.2
-
µC
Peak reverse recovery current
I
rrm
-
12
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
T
j
=25°C
-
440
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
R
th1
0.039
0.039
K/W
C
th1
0.00008293 0.0000734 Ws/K
R
th2
0.083
0.075
C
th2
0.000282
0.000282
R
th3
0.101
0.102
C
th3
0.0004859
0.000401
R
th4
0.262
0.27
C
th4
0.0006523
0.000736
R
th5
0.294
0.594
C
th5
0.005017
0.00501
R
th6
0.094
2.536
C
th6
0.052
0.412
SPP_B
SPP_B
External Heatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2002-08-12
Page 5
SPP04N60C2, SPB04N60C2
SPA04N60C2
Final data
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100
120
°C
160
T
C
0
5
10
15
20
25
30
35
40
45
W
55
SPP04N60C2
P
tot
2 Power dissiaption FullPAK
P
tot
= f (T
C
)
0
20
40
60
80
100
120
°C
160
T
C
0
5
10
15
20
25
30
W
40
P
tot
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
=25°C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
I
D
= f (V
DS
)
parameter: D = 0, T
C
= 25°C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
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