Äîêóìåíòàöèÿ è îïèñàíèÿ www.docs.chipfind.ru
2004-03-01
Page 1
SPN03N60C3
Rev. 2.0
Cool MOSTM
Power Transistor
V
DS
@ T
jmax
650
V
R
DS(on)
1.4
I
D
0.7
A
Feature
· New revolutionary high voltage technology
· Ultra low gate charge
· Extreme dv/dt rated
· Ultra low effective capacitances
SOT-223
VPS05163
1
2
3
4
Type
Package
Ordering Code
SPN03N60C3
SOT-223
Q67040S4552
Marking
03N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
0.7
0.4
A
Pulsed drain current, t
p
limited by T
jmax
T
A
= 25 °C
I
D puls
3
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
3.2
Gate source voltage static
V
GS
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±30
Power dissipation,
T
A
= 25°C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
°C
2004-03-01
Page 2
SPN03N60C3
Rev. 2.0
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 3.2 A, T
j
= 125 °C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - soldering point
R
thJS
-
25
-
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
110
-
-
70
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V
(BR)DSS V
GS
=0V, I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=3.2A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=135
µ, V
GS
=V
DS
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25°C,
T
j
=150°C
-
-
0.5
-
1
70
µA
Gate-source leakage current
I
GSS
V
GS
=30V, V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=2A,
T
j
=25°C
T
j
=150°C
-
-
1.26
3.8
1.4
-
Gate input resistance
R
G
f=1MHz, open Drain
-
10
-
2004-03-01
Page 3
SPN03N60C3
Rev. 2.0
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=0.4A
-
3.4
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
400
-
pF
Output capacitance
C
oss
-
150
-
Reverse transfer capacitance
C
rss
-
5
-
Effective output capacitance,
2)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
12
-
pF
Effective output capacitance,
3)
time related
C
o(tr)
-
26
-
Turn-on delay time
t
d(on)
V
DD
=350V,
V
GS
=0/10V,
I
D
=0.7A,
R
G
=20
-
7
-
ns
Rise time
t
r
-
3
-
Turn-off delay time
t
d(off)
-
64
100
Fall time
t
f
-
12
20
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=420V, I
D
=0.7A
-
2
-
nC
Gate to drain charge
Q
gd
-
6
-
Gate charge total
Q
g
V
DD
=420V, I
D
=0.7A,
V
GS
=0 to 10V
-
13
17
Gate plateau voltage
V
(plateau)
V
DD
=420V, I
D
=0.7A
-
5.5
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
3C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2004-03-01
Page 4
SPN03N60C3
Rev. 2.0
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
A
=25°C
-
-
0.7
A
Inverse diode direct current,
pulsed
I
SM
-
-
3
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=420V, I
F
=I
S
,
di
F
/dt
=100A/µs
-
250
400
ns
Reverse recovery charge
Q
rr
-
1.8
-
µC
Peak reverse recovery current
I
rrm
-
15
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
-
-
540
A/µs
2004-03-01
Page 5
SPN03N60C3
Rev. 2.0
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
SPN03N60C3
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
A
=25°C
10
0
10
1
10
2
10
3
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 10 µs, V
GS
0
4
8
12
16
V
24
V
DS
0
1
2
3
4
5
6
7
8
9
A
11
I
D
20V
7V
6.5V
6V
5.5V
5V
4.5V
4V
PDF 
ZIP