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2003-05-09
Page 1
SPD26N06S2L-35
Opti
MOS
®
Power-Transistor
Product Summary
V
DS
55
V
R
DS(on)
35
m
I
D
30
A
Feature
·
N-Channel
·
Enhancement mode
·
Logic Level
·
175°C operating temperature
·
Avalanche rated
·
dv/dt rated
P- TO252 -3-11
Marking
2N06L35
Type
Package
Ordering Code
SPD26N06S2L-35
P- TO252 -3-11 Q67060-S7426
Maximum Ratings, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
=25°C
I
D
30
22
A
Pulsed drain current
T
C
=25°C
I
D puls
120
Avalanche energy, single pulse
ID=26A, V
DD
=25V,
R
GS
=25
E
AS
80
mJ
Repetitive avalanche energy, limited by T
jmax
1)
E
AR
5
Reverse diode dv/dt
IS=26A, V
DS
=44V,
di/dt=200A/µs, T
jmax
=175°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
68
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
2003-05-09
Page 2
SPD26N06S2L-35
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
1.45
2.2
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
100
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
-
75
50
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
55
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=26µA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=55V,
V
GS
=0V,
T
j
=25°C
V
DS
=55V,
V
GS
=0V,
T
j
=125°C
I
DSS
-
-
0.01
1
1
100
µA
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=13A
R
DS(on)
-
35
47
m
Drain-source on-state resistance
V
GS
=10V, I
D
=13A
R
DS(on)
-
27
35
1Defined by design. Not subject to production test.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2003-05-09
Page 3
SPD26N06S2L-35
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=22A
12.5
25
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f=1MHz
-
590
790 pF
Output capacitance
C
oss
-
138
180
Reverse transfer capacitance
C
rss
-
46
70
Turn-on delay time
t
d(on)
V
DD
=30V,
V
GS
=10V,
I
D
=26A,
R
G
=11
-
6
9
ns
Rise time
t
r
-
21
32
Turn-off delay time
t
d(off)
-
29
44
Fall time
t
f
-
20
30
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=44V, I
D
=26A
-
2
3
nC
Gate to drain charge
Q
gd
-
6
9
Gate charge total
Q
g
V
DD
=44V, I
D
=26A,
V
GS
=0 to 10V
-
18
24
Gate plateau voltage
V
(plateau) V
DD
=44V, I
D
=26A
-
3.9
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
30
A
Inv. diode direct current, pulsed
I
SM
-
-
120
Inverse diode forward voltage
V
SD
V
GS
=0V,
I
F
=26A
-
0.95
1.3
V
Reverse recovery time
t
rr
V
R
=30V,
I
F=
l
S
,
di
F
/dt=100A/µs
-
40
50
ns
Reverse recovery charge
Q
rr
-
36
45
nC
2003-05-09
Page 4
SPD26N06S2L-35
1 Power dissipation
P
tot
= f (
T
C
)
parameter: V
GS
4 V
0
20
40
60
80 100 120 140 160
°C
190
T
C
0
5
10
15
20
25
30
35
40
45
50
55
60
W
75
SPD26N06S2L-35
P
tot
2 Drain current
I
D
= f (
T
C
)
parameter: V
GS
10 V
0
20
40
60
80 100 120 140 160
°C
190
T
C
0
4
8
12
16
20
24
A
32
SPD26N06S2L-35
I
D
4 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD26N06S2L-35
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
SPD26N06S2L-35
I
D
R
DS(on)
=
V
DS
/
I
D
1 ms
100 µs
10 µs
tp = 7.2µs
2003-05-09
Page 5
SPD26N06S2L-35
5 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25°C
parameter: t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75
SPD26N06S2L-35
I
D
VGS [V]
a
a
2.8
b
b
3.0
c
c
3.2
d
d
3.4
e
e
3.6
f
f
3.8
g
g
4.0
h
h
4.5
i
P
tot
= 68W
i
10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter:
V
GS
0
4
8
12 16 20 24 28 32 36
A
42
I
D
0
10
20
30
40
50
60
70
80
90
100
m
120
SPD26N06S2L-35
R
DS(on)
V
GS
[V] =
d
d
3.4
e
e
3.6
f
f
3.8
g
g
4.0
h
h
4.5
i
i
10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0
1
2
3
4
V
5.5
V
GS
0
5
10
15
20
25
30
35
40
45
A
55
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
0
4
8
12
16
A
24
I
D
0
2
4
6
8
10
12
14
16
18
20
22
24
S
28
g
fs
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