2002-01-31
Page 1
SPD11N10
SPU11N10
Preliminary data
SIPMOS
Power-Transistor
Product Summary
V
DS
100
V
R
DS(on)
170
m
I
D
10.5
A
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
P-TO251
P-TO252
Marking
11N10
11N10
Type
Package
Ordering Code
SPD11N10
P-TO252
Q67042-S4121
SPU11N10
P-TO251
Q67042-S4122
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
=25°C
T
C
=100°C
I
D
10.5
7.8
A
Pulsed drain current
T
C
=25°C
I
D puls
41.2
Avalanche energy, single pulse
I
D
=10.5 A , V
DD
=25V, R
GS
=25
E
AS
60
mJ
Reverse diode dv/dt
I
S
=10.5A, V
DS
=80V, di/dt=200A/µs, T
jmax
=175°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
50
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
2002-01-31
Page 2
SPD11N10
SPU11N10
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
3
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
100
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
75
50
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
100
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
= 21 µA
V
GS(th)
2.1
3
4
Zero gate voltage drain current
V
DS
=100V, V
GS
=0V, T
j
=25°C
V
DS
=100V, V
GS
=0V, T
j
=125°C
I
DSS
-
-
0.01
1
1
100
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=10V, I
D
=7.8A
R
DS(on)
-
137
170
m
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2002-01-31
Page 3
SPD11N10
SPU11N10
Preliminary data
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=7.8A
2.6
5.8
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f
=1MHz
-
320
400
pF
Output capacitance
C
oss
-
72
90
Reverse transfer capacitance
C
rss
-
43
54
Turn-on delay time
t
d(on)
V
DD
=50V, V
GS
=10V,
I
D
=10.5A, R
G
=28
-
8.2
10
ns
Rise time
t
r
-
46
58
Turn-off delay time
t
d(off)
-
29
36
Fall time
t
f
-
23
29
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=80V, I
D
=10.5A
-
2.3
2.9
nC
Gate to drain charge
Q
gd
-
7.8
9.8
Gate charge total
Q
g
V
DD
=80V, I
D
=10.5A,
V
GS
=0 to 10V
-
14.6
18.3
Gate plateau voltage
V
(plateau) V
DD
=80V, I
D
=10.5A
-
6.4
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
10.5 A
Inverse diode direct current,
pulsed
I
SM
-
-
41.2
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=10.5A
-
0.93
1.25 V
Reverse recovery time
t
rr
V
R
=50V, I
F =
l
S
,
di
F
/dt
=100A/µs
-
57
71
ns
Reverse recovery charge
Q
rr
-
134
167
nC
2002-01-31
Page 5
SPD11N10
SPU11N10
Preliminary data
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0
2
4
6
8
10
V
13
V
DS
0
5
10
15
A
25
I
D
a
b
c
d
e
f
g
h
a= 5
b= 5.5
c= 6
d= 6.5
e= 7
f= 8
g= 9
h= 10
VGS[V]=
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0
4
8
12
16
20
A
28
I
D
0
50
100
150
200
250
300
m
400
R
DS(on)
a
b
c
d
e
f
g
h
a= 5
b= 5.5
c= 6
d= 6.5
V
GS[
V]=
e= 7
f= 8
g= 9
h= 10
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0
1
2
3
4
5
V
7
V
GS
0
2
4
6
8
A
12
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: g
fs
0
1
2
3
4
5
6
7
8
A
10
I
D
0
1
2
3
4
5
S
7
g
fs
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