SMBTA56U
1
Dec-12-2001
PNP Silicon AF Transistor Array
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA06U (NPN)
Two ( galvanic) internal isolated Transistors
with good matching in one package
VPW09197
1
2
3
4
5
6
EHA07175
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
TR1
TR2
Type
Marking
Pin Configuration
Package
SMBTA56U
s2G
1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
80
V
Collector-base voltage
V
CBO
80
Emitter-base voltage
V
EBO
4
DC collector current
I
C
500
mA
Peak collector current
I
CM
1
A
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
,
T
S
= 115 °C
P
tot
330
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
105
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
SMBTA56U
2
Dec-12-2001
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
80
-
-
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
80
-
-
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
V
(BR)EBO
4
-
-
Collector cutoff current
V
CB
= 80 V,
I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 80 V,
I
E
= 0 ,
T
A
= 150 °C
I
CBO
-
-
20
µA
Collector cutoff current
V
CE
= 60 V,
I
B
= 0
I
CEO
-
-
100
nA
DC current gain 1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
h
FE
100
100
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 100 mA,
I
B
= 10 mA
V
CEsat
-
-
0.25
V
Base-emitter voltage 1)
I
C
= 100 mA,
V
CE
= 1 V
V
BE(ON)
-
-
1.2
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
-
100
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
12
-
pF
1) Pulse test: t
300
µ
s, D = 2%
SMBTA56U
3
Dec-12-2001
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 80V
EHP00851
10
0
C
A
150
nA
CBO
10
4
1
10
-1
5
50
100
5
10
2
10
0
5
T
max
typ
5
10
3
Total power dissipation
P
tot
= f (T
S
)
0
20
40
60
80
100
120 °C
150
T
S
0
50
100
150
200
250
300
mW
400
P
tot
Permissible Pulse Load
R
thJS
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
P
totmax
/ P
totDC
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
P
totmax
/ P
totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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