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Part Number MMBTA42

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SMBTA42/MMBTA42
Feb-21-2003
1
NPN Silicon Transistor for High Voltages
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 (PNP)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
SMBTA42/MMBTA42 s1D
1=B
2=E
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
300
V
Collector-base voltage
V
CBO
300
Emitter-base voltage
V
EBO
6
DC collector current
I
C
500
mA
Base current
I
B
100
Total power dissipation
,
T
S
= 74 °C
P
tot
360
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
210
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
SMBTA42/MMBTA42
Feb-21-2003
2
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
300
-
-
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
300
-
-
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
V
(BR)EBO
6
-
-
Collector cutoff current
V
CB
= 200 V,
I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 200 V,
I
E
= 0 ,
T
A
= 150 °C
I
CBO
-
-
20
µA
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
h
FE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 20 mA,
I
B
= 2 mA
V
CEsat
-
-
0.5
V
Base-emitter saturation voltage 1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
-
-
0.9
AC Characteristics
f
T
50
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
-
-
MHz
4
pF
Collector-base capacitance
V
CB
= 20 V,
f
= 1 MHz
-
C
cb
-
1) Pulse test: t < 300
s; D < 2%
SMBTA42/MMBTA42
Feb-21-2003
3
Transition frequency f
T
= f (I
C
)
V
CE
= 10V, f =100MHz
EHP00839
SMBTA 42/43
10
MHz
10
10
mA
f
C
10
10
T
5
5
5
0
1
2
3
10
3
2
10
1
5
Total power dissipation P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
°C
150
T
S
0
40
80
120
160
200
240
280
320
mW
400
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00840
SMBTA 42/43
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Operating range I
C
= f (V
CEO
)
T
A
= 25°C, D = 0
EHP00841
SMBTA 42/43
10
10
V
CEO
10
C
10
3
1
10
-1
5
10
10
10
0
5
V
mA
5
10
2
0
1
2
3
5
5
5
10
100
1
100
500
DC
µ
µ
ms
ms
ms
s
s
SMBTA42/MMBTA42
Feb-21-2003
4
Collector current I
C
= f (V
BE
)
V
CE
= 10V
EHP00843
SMBTA 42/43
10
0
V
BE
1.5
mA
C
10
3
1
10
-1
5
0.5
1.0
10
0
5
V
5
10
2
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 160V
EHP00842
SMBTA 42/43
10
0
C
A
150
nA
CBO
10
4
1
10
-1
5
50
100
5
10
2
10
0
5
T
max
typ
5
10
3
DC current gain h
FE
= f (I
C
)
V
CE
= 10V
EHP00844
SMBTA 42/43
10
10
mA
h
C
10
5
FE
10
3
1
10
0
5
10
10
10
-1
0
1
2
3
5
10
2
5
5
5