SMBTA42/MMBTA42
Feb-21-2003
1
NPN Silicon Transistor for High Voltages
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 (PNP)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
SMBTA42/MMBTA42 s1D
1=B
2=E
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
300
V
Collector-base voltage
V
CBO
300
Emitter-base voltage
V
EBO
6
DC collector current
I
C
500
mA
Base current
I
B
100
Total power dissipation
,
T
S
= 74 °C
P
tot
360
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
210
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
SMBTA42/MMBTA42
Feb-21-2003
2
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
300
-
-
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
300
-
-
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
V
(BR)EBO
6
-
-
Collector cutoff current
V
CB
= 200 V,
I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 200 V,
I
E
= 0 ,
T
A
= 150 °C
I
CBO
-
-
20
µA
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
h
FE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 20 mA,
I
B
= 2 mA
V
CEsat
-
-
0.5
V
Base-emitter saturation voltage 1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
-
-
0.9
AC Characteristics
f
T
50
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
-
-
MHz
4
pF
Collector-base capacitance
V
CB
= 20 V,
f
= 1 MHz
-
C
cb
-
1) Pulse test: t < 300
s; D < 2%